Download SOT-23 Plastic-Encapsulate Transistors 2SA1 162

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1 162
SOT-23
TRANSISTOR (PNP)
3
FEATURES
. Low noise

. Complementary to 2SC2712

. Small Package

1
2
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: SO , SY , SG
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Current -Continuous
-150
mA
Collector Power Dissipation
150
mW
Junction Temperature
150
℃
PD
TJ
Tstg
Storage Temperature
℃
-55~+150
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-2mA
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
Noise figure
NF
70
IC=-100mA,IB=-10mA
VCE=-10V,IC=-1mA
400
-0.3
80
VCB=-10V,IE=0,f=1MHz
VCE=-6V,Ic=0.1mA,
f=1KHz,Rg=10KΩ
MHz
7
pF
10
dB
CLASSIFICATION OF hFE
Rank
Range
O
Y
GR(G)
70-140
120-240
200-400
www.BDTIC.com/jcst
V
Typical Characterisitics
Static Characteristic
IC
hFE
Ta=100℃
-18uA
-16uA
-14uA
-2
——
COMMON EMITTER
VCE=-6V
COMMON
EMITTER
Ta=25℃
DC CURRENT GAIN
COLLECTOR CURRENT
hFE
300
-20uA
-3
IC
(mA)
-4
2SA1162
-12uA
-10uA
-8uA
-6uA
-1
200
Ta=25℃
100
-4uA
IB=-2uA
0
-0.1
-0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VCEsat
-500
——
VCE
-10
-3
-1
-0.3
-10
COLLECTOR CURRENT
(V)
IC
VBEsat
-1.2
-100 -150
-30
IC
(mA)
IC
——
BDTIC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-300
-100
Ta=100℃
Ta=25℃
-30
-0.8
Ta=25℃
Ta=100℃
-0.4
β=10
β=10
-10
-0.3
-3
-1
-30
-10
COLLECTOR CURRENT
IC
-150
-10
—— VBE
Cob/ Cib
20
——
-100 -150
-30
COLLECTOR CURRENT
IC
(mA)
VCB/ VEB
f=1MHz
IE=0/ IC=0
Ta=25℃
Cib
(pF)
10
Ta=100℃
IC
Cob
C
-10
CAPACITANCE
(mA)
(mA)
-30
-3
Ta=25℃
-1
3
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
1
-0.1
-1.0
fT
300
—— IC
-1
-3
REVERSE VOLTAGE
V
-0.3
BASE-EMMITER VOLTAGE VBE (V)
PC
200
-10
-20
(V)
—— Ta
VCE=-10V
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
fT
TRANSITION FREQUENCY
-3
-1
-0.5
COMMON EMITTER
VCE=-6V
-100
COLLECTOR CURRENT
IC
-0.0
-0.2
-100 -150
200
100
-1
-3
150
100
50
0
www.BDTIC.com/jcst
-30
-10
COLLECTOR CURRENT
IC
(mA)
-100
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150