Download SOT-23 Plastic-Encapsulate Transistors 2SA1037

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1037
SOT-23
TRANSISTOR (PNP)
3
FEATURES
∙ Excellent hFE linearity.
∙ Complments the 2SC2412
1
1. BASE
2
2. EMITTER
3. COLLECTOR
MARKING : FQ, FR, FS
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
150
mA
Collector Power Dissipation
200
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-1mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
Typ
120
Max
560
IC=-50mA,IB=-5mA
-0.5
VCE=-12V,IC=-2mA,f=30MHz
140
VCB=-12V,IE=0,f=1MHz
4.0
Range
5.0
Q
R
S
120 - 270
180 - 390
270 - 560
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V
MHz
CLASSIFICATION OF hFE
Rank
Unit
pF
Typical Characterisitics
Static Characteristic
-12
——
IC
-50uA
-45uA
-10
Ta=100℃
-8
hFE
-40uA
-35uA
DC CURRENT GAIN
(mA)
IC
hFE
1000
COMMON EMITTER
Ta=25℃
COLLECTOR CURRENT
2SA1037
-30uA
-6
-25uA
-20uA
-4
-15uA
-2
Ta=25℃
100
-10uA
IB=-5uA
-0
-0
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE
VBEsat
-1000
——
VCE
COMMON EMITTER
VCE=-6V
10
-8
-1
-10
-100
COLLECTOR CURRENT
(V)
IC
VCEsat
-200
IC
-200
(mA)
IC
——
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (mV)
BDTIC
-800
Ta=25℃
-600
Ta=100℃
-400
-150
Ta=100℃
-100
Ta=25℃
-50
β=10
β=10
-200
-0.1
-0
-1
-10
COLLECTOR CURRENT
(mV)
IC
Ta=100℃
-400
COMMON EMITTER
VCE=-6V
-1
-10
COLLCETOR CURRENT
fT
IC
(mA)
VCB/ VEB
Ta=25℃
Cib
10
Cob
-1
-10
COLLECTOR-BASE VOLTAGE
(mA)
IC
PC
250
COLLECTOR POWER DISSIPATION
PC (mW)
fT
TRANSITION FREQUENCY
——
IC
f=1MHz
IE=0/IC=0
1
-0.1
-100
(MHz)
——
Cob/ Cib
100
-600
1000
-100
COLLECTOR CURRENT
Ta=25℃
-200
-0.1
-10
(mA)
OUTPUT CAPACITANCE
VBE
BASE-EMMITER VOLTAGE
——
-1
Cob/ Cib (pF)
VBE
-800
IC
-100
100
10
VCE= -12V
——
-20
VCB/ VEB (V)
Ta
200
150
100
50
Ta=25℃
1
-0.3
-1
0
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COLLECTOR CURRENT
-10
IC
(mA)
-50
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150