Download TO-92L Plastic-Encapsulate Transistors 2SA1020

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SA1020
TO-92L
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Power Amplifier Applications
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current –Continuous
-2
A
Collector Power Dissipation
900
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
VCBO
PC
TJ
Tstg
Parameter
3. BASE
BDTIC
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC =-100µA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =-10mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-1
µA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-1
µA
hFE(1)
VCE=-2V,IC=-0.5A
70
hFE(2)
VCE=-2V,IC=-1.5A
40
Collector-emitter saturation voltage
VCE(sat)
IC=-1A,IB=-50mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-1A,IB=-50mA
-1.2
V
240
DC current gain
fT
Transition frequency
Collector output capacitance
Cob
Turn-on time
ton
Storage time
ts
Fall time
tf
CLASSIFICATION OF
Rank
Range
VCE=-2V,IC=-500mA
100
MHz
VCB=-10V,IE=0,f=1MHz
40
pF
0.1
μs
1
μs
0.1
μs
VCC=-30V,IB1=-IB2=-0.05A, IC=-1A
hFE(1)
O
Y
70-140
120-240
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2SA1020Y-CAN
Typical Characterisitics
hFE
Static Characteristic
-1.0
400
COMMON EMITTER
Ta=25℃
——
IC
COMMON EMITTER
VCE=-2V
-5mA
-0.8
-4mA
hFE
DC CURRENT GAIN
COLLECTOR CURRENT
-3mA
-0.6
-2.5mA
-2mA
-0.4
-1.5mA
-1mA
-0.2
Ta=100℃
300
-3.5mA
IC
(A)
-4.5mA
Ta=25℃
200
100
IB=-0.5mA
-0.0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VCEsat
-0.6
VCE
0
-0.01
-10
(V)
IC
——
-0.1
-1
COLLECTOR CURRENT
VBEsat
-1.4
——
IC
-2
(A)
IC
BDTIC
β=20
-1.2
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
β=20
-0.4
Ta=100℃
-0.2
Ta=25℃
-0.0
-0.01
-0.1
-1
COLLECTOR CURRENT
IC
-2
IC
-1.0
Ta=25℃
-0.8
Ta=100℃
-0.6
-0.4
-0.01
-2
(A)
-0.1
-1
COLLECTOR CURRENT
—— VBE
1000
Cob/ Cib
——
IC
VCB/ VEB
COMMON EMITTER
VCE=-2V
-1
f=1MHz
IE=0/ IC=0
Cib
Ta=25℃
(pF)
(A)
CAPACITANCE
Ta=25℃
-0.1
-0.01
-0.2
-0.4
100
Cob
C
IC
COLLECTOR CURRENT
Ta=100℃
-0.6
-0.8
-1.0
-1.2
BASE-EMMITER VOLTAGE VBE (V)
Pc
——
10
1
-0.1
-1
REVERSE VOLTAGE
Ta
COLLECTOR POWER DISSIPATION
Pc (mW)
1000
800
600
400
200
0
0
25
50
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75
AMBIENT TEMPERATURE
100
Ta
125
(℃)
150
-2
(A)
-10
V
(V)
-20