Download TO-252-2L Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SA1012
TRANSISTOR
72/
(PNP)
FEATURES
z High Current Switching Applications.
z Low Collector Saturation Voltage
z High Speed Swithing Time
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-5
A
Collector Power Dissipation
1.25
W
5ș-$
Thermal Resistance Junction
to Ambient
100
Я /W
Tj
Junction Temperature
150
℃
-55~+150
℃
PC
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Typ
Unit
Collector-base breakdown voltage
V(BR)CBO
IC =-0.1mA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC =-10mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-1
μA
hFE(1)
VCE=-1V, IC=-1A
70
hFE(2)*
VCE=-1V, IC=-3A
30
DC current gain
240
Collector-emitter saturation voltage
VCE(sat)*
IC=-3A, IB=-150mA
-0.4
V
Base-emitter saturation voltage
VBE(sat)*
IC=-3A, IB=-150mA
-1.2
V
Transition frequency
fT
Collector output capacitance
Cob
Turn-on Time
ton
Storage Time
ts
Fall Time
tf
VCE=-4V, IC=-1A
60
MHz
VCB=-10V, IE=0, f=1MHz
170
pF
0.1
VCC=-30V,IC=-3A,
IB1=-IB2=-0.15A
μs
1.0
0.1
*Pulse test: tp≤300μs, δ≤0.02.
CLASSIFICATION of hFE((1)
Rank
O
Range
70-140
www.BDTIC.com/jcst
Y
120-240
Typical Characterisitics
Static Characteristic
-1.6
(A)
IC
Ta=100℃
IC
hFE
-9mA
DC CURRENT GAIN
-8mA
-1.0
-7mA
-0.8
——
COMMON
EMITTER
Ta=25℃
-10mA
-1.2
hFE
-1000
-1.4
COLLECTOR CURRENT
2SA1012
-6mA
-5mA
-0.6
-4mA
-0.4
Ta=25℃
-100
-3mA
-2mA
-0.2
COMMON EMITTER
VCE=-1V
IB=-1mA
-0.0
-0.0
-10
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
COLLECTOR-EMITTER VOLTAGE
VCEsat
-500
——
-1.6
VCE
-1.8
-2.0
-1
-10
-100
IC
VBEsat
-1.2
-5000
-1000
COLLECTOR CURRENT
(V)
IC
(mA)
IC
——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-100
Ta=25℃
Ta=100℃
-1.0
-0.8
Ta=25℃
-0.6
Ta=100℃
-0.4
β=20
-10
-10
-1000
COLLECTOR CURRENT
IC
-5000
——
IC
-10
-100
-1000
COLLECTOR CURRENT
(mA)
VBE
Cob/ Cib
10000
IC
—— VCB/ VEB
(pF)
Ta=25℃
Cib
1000
C
CAPACITANCE
T=
a 25
℃
T=
a 10
0℃
-100
-5000
(mA)
f=1MHz
IE=0/IC=0
(mA)
IC
-1
-5000
COMMON EMITTER
VCE=-1V
-1000
COLLCETOR CURRENT
β=20
-0.2
-100
-10
Cob
100
-1
-0.1
-0.2
-0.4
-0.6
-0.8
BASE-EMMITER VOLTAGE
fT
1000
——
-1.0
VBE
10
-0.1
-1.2
-1
-10
REVERSE VOLTAGE
(V)
IC
PC
2500
——
V
-30
(V)
Ta
VCE=-4V
COLLECTOR POWER DISSIPATION
PC (mW)
TRANSITION FREQUENCY
fT
(MHz)
Ta=25℃
100
10
1
-50
2000
1500
1000
500
0
-100
www.BDTIC.com/jcst
-1000
COLLECTOR CURRENT
IC
(mA)
-1500
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150