Download TO-92 Plastic-Encapsulate Transistors 2SA1082

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SA1082
TRANSISTOR (PNP)
1. EMITTER
FEATURES
z Low Frequency Amplifier
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-0.1
A
PC
Collector Power Dissipation
400
mW
Thermal Resistance From Junction To Ambient
312
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=- 0.01mA,IE=0
-120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-120
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.01mA,IC=0
-5
V
VCB=-50V,IE=0
-0.1
μA
-0.1
μA
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
VEB=-2V,IC=0
DC current gain
hFE
VCE=-12V, IC=-2mA
VCE(sat)
IC=-10mA,IB=-1mA
Base-emitter voltage
VBE
VCE=-12V, IC=-2mA
-0.6
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
3.5
pF
VCE=-12V,IC=-2mA
90
MHz
Collector-emitter saturation voltage
fT
Transition frequency
250
800
-0.2
V
CLASSIFICATION OF hFE
RANK
D
E
RANGE
250-500
400-800
B,Mar,2014
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
VCE= -12V
o
Ta=100 C
hFE
COMMON
EMITTER
Ta=25℃
-0.003
10uA
DC CURRENT GAIN
COLLECTOR CURRENT
hFE —— IC
1000
IC
(A)
-0.004
2SA1082
9uA
8uA
-0.002
7uA
6uA
5uA
o
Ta=25 C
100
4uA
-0.001
3uA
2uA
IB=1uA
-0.000
-0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE
VCE
10
-12
-1
VBEsat —— IC
-1000
-10
COLLECTOR CURRENT
(V)
VCEsat ——
-200
IC
-100
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
β=10
-800
Ta=25℃
-600
Ta=100℃
-400
β=10
-150
Ta=100℃
-100
Ta=25℃
-50
-200
-0
-0.1
-0
-1
-10
COLLECTOR CURRENT
fT
——
-1
-10
COLLECTOR CURRENT
IC
Cob / Cib
100
——
IC
-100
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
200
C
150
CAPACITANCE
TRANSITION FREQUENCY
-0.1
(mA)
fT
(MHz)
250
IC
-100
100
Cib
10
Cob
50
VCE=-12V
o
Ta=25 C
0
-1
-20
-40
-60
COLLECTOR CURRENT
-80
IC
1
-0.1
-100
IC——VBE
-100
-1
-10
REVERSE VOLTAGE
(mA)
Pc
600
——
V
-20
(V)
Ta
IC (mA)
COLLECTOR POWER DISSIPATION
Pc (mW)
VCE=-12V
COLLECTOR CURRENT
-10
o
o
Ta=100 C
Ta=25 C
-1
500
400
300
200
100
-0.1
-200
0
-400
www.BDTIC.com/jcst
-600
BASE-EMITTER VOLTAGE
-800
VBE(mV)
-1000
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Mar,2014