Download TO-92L Plastic-Encapsulate Transistors 2SA1013

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SA1013
TRANSISTOR
TO-92L
(PNP)
1. EMITTER
FEATURE
y High Voltage:VCEO=-160V
y Large Continuous Collector Current Capability
y Complementary to 2SC2383
2. COLLECTOR
3. BASE
BDTIC
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-1
A
PC
Collector Power Dissipation
0.9
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=- 100μA , IE=0
-160
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
-160
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -10μA, IC=0
-6
V
Collector cut-off current
ICBO
VCB=-150 V , IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-1
μA
DC current gain
hFE
VCE=-5 V, IC=- 200mA
Collector-emitter saturation voltage
VCE(sat)
IC= -500m A, IB= -50mA
-1.5
V
Base-emitter voltage
VBE
IC= -5 mA, VCE=- 5V
-0.75
V
Transition frequency
fT
VCE= -5 V, IC= -200mA
Cob
VCB=-10V, IE=0,f=1MHz
Collector Output capacitance
60
320
15
MHz
35
CLASSIFICATION OF hFE
Rank
Range
R
O
Y
60-120
100-200
160-320
www.BDTIC.com/jcst
pF
Typical Characteristics
Static Characteristic
(mA)
-1.0mA
-0.9mA
DC CURRENT GAIN
IC
VCE= -5V
COMMON
EMITTER
Ta=25℃
-0.8mA
-200
-0.7mA
COLLECTOR CURRENT
hFE —— IC
600
hFE
-300
2SA1013
-0.6mA
-0.5mA
-0.4mA
-100
o
Ta=100 C
400
200
o
Ta=25 C
-0.3mA
-0.2mA
IB=-0.1mA
-0
0
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
COLLECTOR-EMITTER VOLTAGE
VCE
-10
-11
-12
-1
VBEsat —— IC
-1.2
-10
COLLECTOR CURRENT
(V)
VCEsat ——
-400
-100
IC
-1000
(mA)
IC
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
-1.0
-0.8
Ta=25℃
-0.6
-0.4
Ta=100℃
β=10
-300
-200
Ta=100℃
-100
-0.2
Ta=25℃
-0.0
-0
-1
-10
-100
COLLECTOR CURRENT
fT
——
IC
-10
-100
COLLECTOR CURRENT
IC
Cob / Cib
1000
——
IC
-1000
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
80
C
60
CAPACITANCE
TRANSITION FREQUENCY
-1
(mA)
fT
(MHz)
100
-1000
40
Cib
100
Cob
10
20
VCE=-5V
o
Ta=25 C
0
-0
-50
-100
-150
-200
-250
COLLECTOR CURRENT
VBE ——
-300
IC
-350
1
-0.1
-400
(mA)
IC
Pc
1.0
-100
COLLECTOR POWER DISSIPATION
Pc (W)
IC (mA)
-1000
COLLECTOR CURRENT
-1
-10
REVERSE VOLTAGE
o
Ta=100 C
-10
Ta=25℃
-1
——
V
-20
(V)
Ta
0.8
0.6
0.4
0.2
VCE=-5V
-0.1
-0.2
0.0
-0.3
-0.4
-0.5
www.BDTIC.com/jcst
-0.6
-0.7
BASE-EMITTER VOLTAGE
-0.8
VBE(V)
-0.9
-1.0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150