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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2N4403
TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
1. EMILTTER
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
2. BASE
3. COLLECTOR
BDTIC
IC
Collector Current -Continuous
-600
mA
PC
Collector Power dissipation
0.625
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 ~ +150
℃
RRӨJA
ӨJA
Thermal
ThermalResistance,
Resistance,junction
junctiontotoAmbient
Ambient
200
357
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-35V,IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-100
nA
hFE(1)
VCE=-1V,IC=-0.1mA
30
hFE(2)
VCE=-1V,IC=-1mA
60
hFE(3)
VCE=-1V,IC=-10mA
100
hFE(4)
VCE=-1V,IC=-150mA
100
hFE(5)
VCE=-2V,IC=-500mA
20
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
300
VCE(sat)1
IC=-150mA,IB=-15mA
-0.4
V
VCE(sat)2
IC=-500mA,IB=-50mA
-0.75
V
VBE(sat)1
IC=-150mA,IB=-15mA
-0.95
V
VBE(sat)2
IC=-500mA,IB=-50mA
-1.3
V
Transition frequency
fT
Collector capacitance
Cob
VCE=-10V,IC=-20mA,f=100MHz
VCB=-10V,IE=0,f=100KHz
-0.75
200
MHz
8.5
pF
15
nS
Delay time
td
Rise time
tr
VCC=-30V, IC=-150mA
20
nS
Storage time
tS
IB1=- IB2=-15mA
225
nS
Fall time
tf
30
nS
www.BDTIC.com/jcst
Typical Characteristics
2N4403
Static Characteristic
COMMON
EMITTER
Ta=25℃
COMMON EMITTER
VCE= -1V
-2.0mA
-1.8mA
IC
Ta=100℃
-1.6mA
-1.4mA
-200
-1.2mA
-1.0mA
-150
-0.8mA
-0.6mA
-100
Ta=25℃
100
DC CURRENT GAIN
IC
——
hFE
(mA)
-250
COLLECTOR CURRENT
hFE
1000
-300
10
-0.4mA
-50
IB=-0.2mA
-0
1
-0
-1
-2
-3
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
-1200
-4
-1
-10
COLLECTOR CURRENT
VCE (V)
IC
VCEsat
-600
IC
——
-600
-100
(mA)
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-1000
Ta=25℃
-800
-600
Ta=100 ℃
-400
-200
-0
-0.1
-1
-10
-100
COLLECTOR CURREMT
IC
——
IC
Ta=100 ℃
-100
-10
-0.1
-600
-1
-10
COLLECTOR CURREMT
(mA)
VBE
fT
500
-600
——
-100
IC
-600
(mA)
IC
(MHz)
COMMON EMITTER
VCE= -1V
-100
TRANSITION FREQUENCY
-10
T =2
5℃
a
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
Ta=25℃
-1
100
COMMON EMITTER
VCE= -10V
Ta=25℃
-0.1
-200
-30
-400
-600
-800
-1000
-1
-20
100
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Ta=25 ℃
(pF)
Cib
C
CAPACITANCE
PC
750
f=1MHz
IE=0/IC=0
10
Cob
1
-0.1
-40
-60
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
——
-80
IC
-100
(mA)
Ta
625
500
375
250
125
0
-1
www.BDTIC.com/jcst
REVERSE VOLTAGE
-10
V
(V)
-30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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