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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2N5832
TRANSISTOR (NPN)
1. EMITTER
FEATURES
z General Purpose Switching Application
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
600
mA
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
160
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
140
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.01mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=120V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=5V, IC=10mA
Collector-emitter saturation voltage
VCE(sat)
IC=50mA,IB=5mA
0.25
V
Base-emitter saturation voltage
VBE (sat)
IC=50mA,IB=5mA
1
V
Base-emitter voltage
VBE
VCE=5V, IC=1mA
0.8
V
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
4
pF
Transition frequency
fT
VCE=10V,IC=1mA, f=100MHz
175
0.05
μA
0.05
μA
500
100
MHz
A,Dec,2010
www.BDTIC.com/jcst
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