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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2N5551
TO – 92
TRANSISTOR (NPN)
1. EMITTER
FEATURES
z General Purpose Switching Application
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
6
V
A
BDTIC
IC
Collector Current
0.6
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Test
V(BR)CBO
*
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
conditions
Min
Typ
Max
Unit
IC=100µA,IE=0
180
V
IC=1mA,IB=0
160
V
IE=10µA,IC=0
6
V
Collector cut-off current
ICBO
VCB=120V,IE=0
50
nA
Emitter cut-off current
IEBO
VEB=4V,IC=0
50
nA
hFE(1)
VCE=5V, IC=1mA
80
hFE(2)
VCE=5V, IC=10mA
80
hFE(3)
VCE=5V, IC=50mA
50
VCE(sat)（1）
IC=10mA,IB=1mA
0.15
V
VCE(sat)（2）
IC=50mA,IB=5mA
0.2
V
VBE (sat)（1）
IC=10mA,IB=1mA
1
V
VBE (sat)（2）
IC=50mA,IB=5mA
1
V
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
300
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
6
pF
Emitter input capacitance
Cib
VBE=0.5V,IC=0, f=1MHz
20
pF
Transition frequency
fT
VCE=10V,IC=10mA, f=100MHz
300
MHz
100
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(2)
RANK
RANGE
80-100
A
B
C
100-150
150-200
200-300
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristic
18
80uA
15
COMMON EMITTER
VCE=5V
COMMON
EMITTER
Ta=25℃
60uA
50uA
9
Ta=100℃
hFE
70uA
12
DC CURRENT GAIN
(mA)
IC
hFE —— IC
500
90uA
COLLECTOR CURRENT
2N5551
40uA
6
30uA
Ta=25℃
100
IB=20uA
3
0
10
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1.0
VCE
12
1
10
(V)
100
COLLECTOR CURRENT
IC
VCEsat ——
0.3
IC
200
(mA)
IC
BDTIC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
0.8
Ta=25℃
0.6
Ta=100℃
0.4
0.2
0.1
Ta=100℃
Ta=25℃
0.01
1
10
COLLECTOR CURRENT
VBE
——
100
IC
1
200
10
(mA)
100
COLLECTOR CURRENT
IC
Cob / Cib
100
200
——
IC
VCB / VEB
f=1MHz
IE=0 / IC=0
CAPACITANCE
C
Ta=100℃
Ta=25℃
Cib
(pF)
IC (mA)
200
(mA)
COMMON EMITTER
VCE=5V
100
COLLECTOR CURRENT
0.1
Ta=25℃
10
1
0.2
0.4
0.6
BASE-EMITTER VOLTAGE
fT
——
0.8
Cob
1
0.1
1.0
VBE(V)
10
1
10
REVERSE VOLTAGE
IC
PC
750
150
——
V
20
(V)
Ta
VCE=10V
TRANSITION FREQUENCY
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
100
50
625
500
375
250
125
0
1
3
www.BDTIC.com/jcst
COLLECTOR CURRENT
10
IC
(mA)
20
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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