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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2N4401
TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Value
Unit
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
600
mA
0.625
W
Junction Temperature
150
℃
Storage Temperature
-55~+150
PC
Tstg
2.BASE
BDTIC
Collector Power dissipation
TJ
1.EMILTTER
RӨJA
Thermal Resistance, junction to Ambient
3. COLLECTOR
℃
℃/mW
357
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA , IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=35V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC= 0.1mA
20
hFE(2)
VCE=1V, IC=1mA
40
hFE(3)
VCE=1V, IC= 10mA
80
hFE(4)
VCE=1V, IC=150mA
100
hFE(5)
VCE=2V, IC= 500mA
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
300
VCE(sat)1
IC=150 mA, IB=15mA
0.4
V
VCE(sat)2
IC=500 mA, IB=50mA
0.75
V
VBE(sat)1
IC=150 mA, IB=15mA
0.95
V
VBE(sat)2
IC=500 mA, IB=50mA
1.2
V
Transition frequency
fT
Output Capacitance
Cob
Delay time
td
Rise time
tr
Storage time
tS
Fall time
tf
VCE= 10V, IC= 20mA,
f=100MHz
VCB=10V, IE= 0,
f=100KHz
VCC=30V, VBE(OFF)=2V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=-IB2= 15mA
www.BDTIC.com/jcst
250
MHz
6.5
pF
15
nS
20
nS
225
nS
30
nS
Typical Characteristics
Static Characteristic
COMMON
EMITTER
Ta=25℃
1.0mA
0.9mA
0.8mA
0.7mA
IC
200
DC CURRENT GAIN
150
——
IC
COMMON EMITTER
VCE=1V
Ta=100℃
0.6mA
COLLECTOR CURRENT
hFE
1000
hFE
(mA)
250
2N4401
0.5mA
0.4mA
100
0.3mA
0.2mA
50
300
Ta=25℃
100
30
IB=0.1mA
0
0
1
2
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
——
10
0.1
3
VCE
1
0.3
(V)
10
3
IC
VBEsat
1.0
100
30
COLLECTOR CURRENT
IC
——
600
(mA)
IC
BASE-EMMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
300
100
Ta=100℃
Ta=25℃
30
0.8
Ta=25℃
Ta=100℃
0.6
β=10
β=10
10
0.4
1
10
3
100
30
COLLECTOR CURRENT
IC
VBE
Cob/ Cib
100
——
600
100
COLLECTOR CURRENT
IC
(mA)
VCB/ VEB
f=1MHz
IE=0/IC=0
Ta=25℃
Ta=100℃
Cib
C
(pF)
100
30
Ta=25℃
10
10
Cob
3
1
0.2
0.4
0.6
0.8
BASE-EMITTER VOLTAGE
fT
1000
——
VBE
1
0.1
1.0
1
0.3
(V)
IC
PC
750
10
3
REVERSE BIAS VOLTAGE
——
V
20
(V)
Ta
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
COMMON EMITTER
VCE=10V
Ta=25℃
fT
TRANSITION FREQUENCY
30
10
(mA)
CAPACITANCE
IC
COLLECTOR CURRENT
——
3
COMMON EMITTER
VCE=1V
(mA)
600
IC
1
600
300
100
10
625
500
375
250
125
0
www.BDTIC.com/jcst
100
30
COLLECTOR CURRENT
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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