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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Transistors
TIP142
DARLINGTON TRANSISTOR (NPN)
TO-263-2L
FEATURES
Power dissipation
PCM: 3.5W (Ta=25℃)
1. BASE
2. COLLECTOR
3. EMITTER
BDTIC
MAXIMUM RATINGS(Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
10
A
PC
Collector Dissipation
3.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RΘJA
Thermal resistance from junction to ambient
℃/W
36
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
condition
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=10mA,IE=0
100
V
Collector-Emitter Sustaining Voltage
VCEO(sus)*
Ic= 30mA,I B=0
100
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10mA,IC=0
5
V
ICBO
VCB=100V,IE=0
1
mA
ICEO
VCE=50V,IB=0
2
mA
IEBO
VEB=5V,IC=0
2
mA
hFE(1)
VCE=4V,IC=5A
1000
hFE(2)
VCE=4V,IC=10A
500
VCE(sat)1
IC=5A,IB=10mA
2
V
VCE(sat)2
IC=10A,IB=40mA
3
V
VBE(sat)
IC=10A,IB=40mA
3.5
V
3
V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
VBE
VCE=4V,IC=10A
www.BDTIC.com/jcst
Delay time
td
Rise time
tr
0.15
us
0.55
us
VCC=30V,IC=5A,IB1=-IB2=20mA
Storage time
ts
2.5
us
Fall time
tf
2.5
us
*:Pulse Test: Pulse Width = 300 us, Duty Cycle = 2.0%.
BDTIC
www.BDTIC.com/jcst
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