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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA14 TRANSISTOR (NPN) 1.EMITTER FEATURES z Darlington Transistor 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) BDTIC Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 10 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=10V,IC=0 0.1 μA IC=100mA,IB=0.1mA 1.5 V VCE=5V,IC=100mA 2.0 V DC current gain Collector-emitter saturation voltage hFE(1) * hFE(2) * VCE(sat) Base-emitter voltage VBE Transition frequency fT * * VCE=5V, IC=10mA 10000 VCE=5V, IC=100mA 20000 VCE=5V,IC=10mA,f=100MHz 125 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. B,Nov,2011 www.BDTIC.com/jcst Typical Characteristics hFE Static Characteristic 120 hFE 2.7uA 2.4uA 80 2.1uA 1.8uA 60 1.5uA 40 1.2uA 0.9uA 20 COMMON EMITTER VCE=5V Ta=100℃ 100K DC CURRENT GAIN (mA) IC 100 IC —— 200K COMMON EMITTER Ta=25℃ 3.0uA COLLECTOR CURRENT MPSA14 Ta=25℃ 10K 0.6uA IB= 0.3uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 6 1K 7 10 100 COLLECTOR CURRENT IC —— 1 VCE (V) VBEsat —— 2000 IC 500 (mA) IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BDTIC 800 Ta=25℃ 600 Ta=100 ℃ β=1000 400 1 10 IC —— IC Ta=100 ℃ β=1000 1 10 (mA) VBE Cob/Cib IC (mA) VCB/VEB —— 20 f=1MHz IE=0/IC=0 Ta=25 ℃ 10 (pF) 100 Cib CT T =2 5℃ a T =1 00℃ a Cob CAPACITANCE 10 COMMON EMITTER VCE=5V 1 0.0 0.4 0.8 1.2 1.6 1 0.1 2.0 1 fT —— 10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) IC PC 750 200 —— V 20 (V) Ta COLLECTOR POWER DISSIPATION PC (mW) 625 100 TRANSITION FREQUENCY fT (MHz) 500 100 COLLECTOR CURRENT IC (mA) 1000 500 500 COLLECTOR CURRENT Ta=25℃ 500 100 COLLECTOR CURRENT 1500 COMMON EMITTER VCE=5V Ta=25℃ 10 3 10 500 375 250 125 0 www.BDTIC.com/jcst COLLECTOR CURRENT 100 IC (mA) 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (℃ ) B,Nov,2011