Download TO-92 Plastic-Encapsulate Transistors MPSA13

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPSA13
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z Darlington Transistors
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current
0.5
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
10
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=10V,IC=0
0.1
μA
IC=100mA,IB=0.1mA
1.5
V
VCE=5V,IC=100mA
2.0
V
hFE(1) *
DC current gain
hFE(2)
Collector-emitter saturation voltage
VCE(sat)
VBE
Base-emitter voltage
Current gain-bandwidth product
*
*
fT
*
VCE=5V, IC=10mA
5000
VCE=5V, IC=100mA
10000
VCE=5V,IC=10mA,f=100MHz
125
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
www.BDTIC.com/jcst
MHz
Typical Characteristics
hFE
Static Characteristic
80
COMMON EMITTER
VCE=5V
Ta=100℃
Ta=25℃
hFE
2.4uA
DC CURRENT GAIN
2.1uA
1.8uA
40
1.5uA
1.2uA
0.9uA
20
IC
——
100K
COMMON
EMITTER
Ta=25℃
2.7uA
60
IC
(mA)
3.0uA
COLLECTOR CURRENT
MPSA13
10K
0.6uA
IB= 0.3uA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
6
1K
7
10
100
COLLECTOR CURRENT
IC
——
1
VCE (V)
VBEsat ——
2000
IC
500
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
800
Ta=25℃
600
Ta=100 ℃
β=1000
400
1
10
IC
——
IC
Ta=100 ℃
β=1000
1
10
(mA)
COLLECTOR CURRENT
VBE
Cob/Cib
IC
(mA)
VCB/VEB
——
f=1MHz
IE=0/IC=0
Ta=25 ℃
(pF)
Cob
CAPACITANCE
T =2
5℃
a
T =1
00℃
a
Cib
CT
10
100
10
COMMON EMITTER
VCE=5V
1
0.0
0.4
0.8
1.2
1.6
1
0.1
2.0
1
fT
——
10
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
IC
PC
750
300
——
V
20
(V)
Ta
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
625
100
TRANSITION FREQUENCY
fT
500
100
20
IC
(mA)
1000
500
500
COLLECTOR CURRENT
Ta=25℃
500
100
COLLECTOR CURRENT
1500
COMMON EMITTER
VCE=5V
Ta=25℃
10
3
10
500
375
250
125
0
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COLLECTOR CURRENT
100
IC
(mA)
0
25
50
75
100
AMBIENT TEMPERATURE
125
Ta
(℃ )
150