Download SOT-23 Plastic-Encapsulate Transistors MMBTA14

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA14
SOT-23
TRANSISTOR (NPN)
Unit : mm
FEATURES
Darlington Amplifier
1. BASE
2. EMITTER
3. COLLECTOR
Marking : K3D
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current -Continuous
0.3
A
PC
Collector Power Dissipation
300
mW
417
℃/W
150
℃
RθJA
Thermal Resistance from Junction to Ambient
TJ
Junction Temperature
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 100μA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
10
V
Collector cut-off current
ICBO*
VCB=30 V, IE=0
0.1
μA
Emitter cut-off current
IEBO*
VEB= 10V ,IC=0
0.1
μA
hFE(1) *
VCE=5V, IC= 10mA
10000
hFE(2) *
VCE=5V, IC= 100mA
20000
Collector-emitter saturation voltage
VCE (sat)*
IC=100mA, IB=0.1mA
1.5
V
Base-emitter saturation voltage
VBE (sat) *
IC=100mA, IB=0.1mA
2
V
Base-emitter voltage
VBE *
VCE=5V,IC= 100mA
2.0
V
Transition frequency
fT
Collector output capacitance
Cob
DC current gain
VCE=5V, IC= 10mA
f=100MHz
VCB=10V,IE=0,f=1MHz
* Pulse Test : pulse width≤300μs,duty cycle≤2%.
www.BDTIC.com/jcst
125
MHz
12
pF
Typical Characteristics
Static Characteristic
COMMON
EMITTER
Ta=25℃
2uA
100
——
IC
COMMON EMITTER
VCE=5V
100K
Ta=100℃
hFE
1.8uA
80
hFE
300K
1.6uA
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
120
MMBTA14
1.4uA
60
1.2uA
1uA
40
0.8uA
Ta=25℃
10K
0.6uA
20
0.4uA
IB= 0.2uA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
6
1K
7
10
100
COLLECTOR CURRENT
IC
——
1
VCE (V)
VBEsat ——
2000
IC
300
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
800
Ta=25℃
600
Ta=100 ℃
β=1000
400
1
10
100
COLLECTOR CURRENT
IC
300
——
IC
1500
Ta=25℃
1000
Ta=100 ℃
β=1000
500
300
1
10
(mA)
COLLECTOR CURRENT
VBE
Cob/Cib
20
——
IC
(mA)
VCB/VEB
f=1MHz
IE=0/IC=0
100
(mA)
Ta=25 ℃
(pF)
Cob
CAPACITANCE
T =2
5℃
a
T =1
00℃
a
10
Cib
CT
10
IC
COLLECTOR CURRENT
300
100
1
COMMON EMITTER
VCE=5V
0.1
0.0
0.4
0.8
1.2
1.6
1
0.1
2.0
1
fT
200
——
10
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
IC
PC
350
——
V
20
(V)
Ta
COLLECTOR POWER DISSIPATION
PC (mW)
100
TRANSITION FREQUENCY
fT
(MHz)
300
COMMON EMITTER
VCE=5V
Ta=25℃
10
3
10
250
200
150
100
50
0
www.BDTIC.com/jcst
COLLECTOR CURRENT
100
IC
(mA)
0
25
50
75
100
AMBIENT TEMPERATURE
125
Ta
150
(℃ )
B,Nov,2011