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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L
MJD127
Plastic-Encapsulate Transistors
TO-252-2L
TRANSISTOR (PNP)
FEATURES
1. BASE
High DC Current Gain
Electrically Similar to Popular TIP127
Built-in a Damper Diode at E-C
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-8
A
PC
Collector Power Dissipation
1.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-1mA,IE=0
-100
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-30mA,IB=0
-100
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-100V,IE=0
-10
µA
Collector-emitter cut-off current
ICEO
VCE=-50V,IB=0
-10
µA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-2
mA
hFE(1)
VCE=-4V,IC=-4A
1000
VCE=-4V,IC=-8A
100
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
12000
VCE(sat) 1
*
IC=-4A,IB=-16mA
-2
V
VCE(sat) 2
*
IC=-8A,IB=-80mA
-4
V
IC=-8A,IB=-80mA
-4.5
V
VCE=-4V,IC=-4A
-2.8
V
VCB=-10V,IE=0,f=0.1MHz
300
pF
VBE(sat)
*
*
Base-emitter voltage
VBE
Collector output capacitance
Cob
*Pulse Test: Pulse Width≤380µs, Duty Cycle≤2%
www.BDTIC.com/jcst
Typical Characteristics
Static Characteristics
-5
-360uA
-4
hFE
DC CURRENT GAIN
-280uA
-240uA
-200uA
-160uA
-2
-120uA
Ta=100℃
1000
Ta=25℃
100
-80uA
-1
IC
10000
-320uA
-3
——
COMMON EMITTER
VCE= -4V
-400uA
IC
(A)
hFE
100000
COMMON EMITTER
Ta=25℃
COLLECTOR CURRENT
MJD127
10
IB=-40uA
-0
-0
-1
-2
-3
-4
COLLECTOR-EMITTER VOLTAGE
VCEsat
-10
——
1
-5
-1
-10
-100
IC
VBEsat ——
-10
-8000
-1000
COLLECTOR CURRENT
VCE (V)
IC
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
Ta=25℃
Ta=100 ℃
β=100
-0.1
-30
-100
COLLECTOR CURRENT
VCEsat
β=100
-100
(mA)
IC
——
-8000
-1000
COLLECTOR CURRENT
IC
-8000
IC
(mA)
—— VBE
IC
(mA)
COMMON EMITTER
VCE=-4V
-1000
Ta=25℃
-1
Ta=100 ℃
β=250
-0.1
-30
-100
-1000
COLLECTOR CURRENT
500
Cob
——
IC
-100
-30
-0.5
-8000
T =2
5℃
a
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-10
IC
-0.1
-0.01
-30
-8000
-1000
Ta=100 ℃
T =1
00℃
a
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BDTIC
-1
Ta=25℃
-1
-1.0
-1.5
-2.0
BASE-EMMITER VOLTAGE VBE (V)
(mA)
VCB
PC
2.0
——
Ta
COLLECTOR POWER DISSIPATION
PC (W)
f=1MHz
IE=0/IC=0
Ta=25 ℃
100
CAPACITANCE
CT
(pF)
Cob
10
-0.1
1.5
1.0
0.5
0.0
-1
www.BDTIC.com/jcst
REVERSE VOLTAGE
-10
V
(V)
-20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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