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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
BCX38
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z High DC Current Gain
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current -Continuous
0.8
A
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
*
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Test
conditions
Min
Typ
Max
Unit
IC= 0.01mA,IE=0
80
V
IC=10mA,IB=0
60
V
IE=0.01mA,IC=0
10
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=8V,IC=0
0.1
μA
IC=800mA,IB=8mA
1.25
V
IC=800mA, VCE=5V
1.8
V
VCE=5V, IC=100mA
*
hFE(1)
DC current gain
500
BCX38B
2000
BCX38C
5000
VCE=5V, IC=500mA
hFE(2)
Collector-emitter saturation voltage
Base-emitter voltage
BCX38A
*
VCE(sat)
VBE
*
*
BCX38A
1000
BCX38B
4000
BCX38C
10000
*Pulse test
A,Dec,2010
www.BDTIC.com/jcst
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