Download TO-220F Plastic-Encapsulate Transistors 3DD13003F

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3DD13003F
TRANSISTOR ( NPN )
TO-220F
FEATURE
Power Switching Applications
1. BASE
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
VCBO
2. COLLECTOR
Unit
700
V
3. EMITTER
BDTIC
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Value
400
V
9
V
1.5
A
2
W
62.5
℃/W
Collector Dissipation
RθJA
Thermal Resistance from Junction
to Ambient
TJ, Tstg
Junction and Storage Temperature
℃
-55~+150
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=
=
5mA,IE 0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=
=
10 mA,IB 0
400
V
Emitter-base breakdown voltage
V(BR)EBO
=
IE= 2mA, IC 0
V
9
Collector cut-off current
ICBO
=
VCB=700V,IE 0
1
mA
Collector cut-off current
ICEO
=
VCE=400V,IB 0
0.5
mA
Emitter cut-off current
IEBO
1
mA
=
VEB=9V, IC 0
40
hFE(1)
VCE=5V,IC=0.5 A
8
hFE(2)
VCE=5V,IC=1.5 A
5
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB=250mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB=250mA
1.2
V
Transition frequency
fT
Fall time
tf
IC= 1A,IB1=-IB2=0.2A
VCC=100V
Storage time
ts
IC=250mA
DC current gain
VCE=10V,Ic=100mA
5
f =1MHz
MHz
2
0.5
µs
4
µs
CLASSIFICATION OF hFE (1)
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF tS
Rank
A1
Range
2-2.5 (μs )
A2
2.5-3(μs )
B1
3-3.5(μs )
www.BDTIC.com/jcst
B2
3.5-4 (μs )
Related documents