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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
3DD13001 TRANSISTOR (NPN)
1. BASE
2. COLLECTOR
FEATURES
z Power switching applications
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
BDTIC
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
8
V
0.2
A
0.625
W
150
℃
IC
Collector Current -Continuous
PC
Collector Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 1mA,IE=0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
450
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
8
V
Collector cut-off current
ICBO
VCB=600V,IE=0
100
μA
Collector cut-off current
ICEO
VCE=400V,IB=0
100
μA
100
μA
Emitter cut-off current
DC current gain
IEBO
VEB=7V,IC=0
hFE(1)
VCE=20V, IC=20mA
14
hFE(2)
VCE=10V, IC=0.25mA
5
hFE(3)
VCE=5V, IC=0.5A
1
29
Collector-emitter saturation voltage
VCE(sat)
IC=50mA,IB=10mA
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=50mA,IB=10mA
1.1
V
fT
Transition frequency
Rail time
tr
Storage time
ts
VCE=20V,IC=20mA,f=1MHz
IC=0.1A
8
MHz
0.9
1.7
2.9
CLASSIFICATION OF hFE(1)
Range
14-17
17-20
20-23
23-26
www.BDTIC.com/jcst
26-29
μs
μs
Typical Characterisitics
3DD13001
hFE
Static Characteristic
40
40
hFE
1.2mA
DC CURRENT GAIN
(mA)
1.35mA
IC
COLLECTOR CURRENT
VCE=20V
COMMON
EMITTER
Ta=25℃
1.5mA
30
—— IC
1.05mA
900uA
20
750uA
600uA
450uA
10
30
Ta=100℃
Ta=25℃
20
10
300uA
IB=150uA
0
0.1
0
0
10
20
30
40
COLLECTOR-EMITTER VOLTAGE
VCEsat
500
——
VCE
50
1
0.3
(V)
3
10
COLLECTOR CURRENT
IC
VBEsat
1.2
——
200
100
30
IC
(mA)
IC
BDTIC
β=5
1.0
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
300
Ta=100℃
100
Ta=25℃
30
0.8
Ta=25℃
Ta=100℃
0.6
0.4
0.2
10
0.1
β=5
0.3
3
1
30
10
COLLECTOR CURRENT
IC
——
IC
100
0.0
0.1
200
0.3
3
1
(mA)
30
10
COLLECTOR CURRENT
VBE
Cob/ Cib
200
——
IC
VCB/ VEB
f=1MHz
IE=0/IC=0
(mA)
100
Ta=25℃
Cib
(pF)
Ta=100℃
IC
C
30
Ta=25℃
CAPACITANCE
COLLCETOR CURRENT
200
300
VCE=20V
100
10
3
30
10
Cob
3
1
0.4
0.6
0.8
BASE-EMMITER VOLTAGE
PC
1.0
COLLECTOR POWER DISSIPATION
PC (W)
100
(mA)
——
VBE
1.0
1
0.1
0.3
1
REVERSE VOLTAGE
(V)
Ta
0.8
0.6
0.4
0.2
0.0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
10
3
V
(V)
20
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