Download TO-126C Plastic-Encapsulate Transistors 3DD13003

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
3DD13003
TO-126C
TRANSISTOR (NPN)
FEATURES
1.BASE
High total power disspation
2.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
700
Unit
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Power Dissipation
1.25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
3.EMITTER
BDTIC
-55~150
℃
ELECTRICAL CHARACTERISTICS (Ta =25 ℃ unless otherwise specified)
Parameter
symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V=
IC =1mA, IE 0
(BR)CBO
700
V
Collector-emitter breakdown voltage
V(BR)CEO
=
IC=10mA, IB 0
400
V
9
V
Emitter-base breakdown voltage
=
V(BR)EBO
IE=1mA, IC 0
Collector cut-off current
I=
VCB=700V,IE 0
CBO
1
mA
Collector cut-off current
I=
VCE=400V,IB 0
CEO
0.5
mA
1
mA
Emitter cut-off current
=
IEBO
VEB=9V, IC 0
DC current gain
hFE(1)
VCE=5V, IC= 0.5 A
8
hFE(2)
VCE=5V, IC= 1.5A
5
40
Collector-emitter saturation voltage
=
VCE(sat)
IC=1A,IB 0.25A
V
Base-emitter saturation voltage
=
VBE(sat)
IC=1A,IB 0.25A
1.2
V
Transition frequency
fT
VCE=10V,I&=100mA, f =1MHz
Fall time
tf
IC=1A, IB1=-IB2=0.2A,
=
VCC 100V
Storage time
ts ,& P$
Base-emitter voltage
&/$66,),&$7,212) hFE
5
MHz
0.5
=
VBE
IE 2A
µs
3
μs
V
5DQN
5DQJH
8-10
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF tS
Rank
A1
A2
Range
2-2.5 (ȝs )
2.5-3(ȝs )
B1
3-3.5(ȝs )
www.BDTIC.com/jcst
B2
3.5-4 (ȝs )
',Mar,201
Typical Characteristics
3DD13003
Static Charistic
800
COMMON
EMITTER
Ta=25℃
30mA
Ta=25℃
DC CURRENT GAIN
21mA
IC
IC
Ta=100℃
24mA
18mA
15mA
400
——
hFE
(mA)
27mA
600
COLLECTOR CURRENT
hFE
100
12mA
9mA
200
10
6mA
IB
COMMON EMITTER
VCE= 5V
=3mA
0
1
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
2000
8
1
10
100
COLLECTOR CURRENT
VCE (V)
IC
VCEsat
1000
——
IC
1000 1500
(mA)
IC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
BDTIC
1000
Ta=25℃
Ta=100 ℃
β=4
100
1
10
IC
——
IC
Ta=100 ℃
Ta=25℃
β=4
10
1
1000 1500
100
COLLECTOR CURREMT
100
10
100
COLLECTOR CURREMT
(mA)
VBE
fT
10
——
1000 1500
(mA)
IC
T =2
5℃
a
TRANSITION FREQUENCY
100
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
(MHz)
1500
1000
IC
10
COMMON EMITTER
VCE=5V
1
0.0
COMMON EMITTER
VCE=10V
Ta=25℃
1
0.3
0.6
0.9
1.2
20
5000
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (W)
Ta=25 ℃
Cib
CAPACITANCE
C
(pF)
1000
100
Cob
10
1
0.1
PC
1.50
f=1MHz
IE=0/IC=0
200
100
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (V)
——
IC
(mA)
Ta
1.25
1.00
0.75
0.50
0.25
0.00
1
www.BDTIC.com/jcst
REVERSE VOLTAGE
10
V
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
',Mar,201
Related documents