Download SOT-363 Plastic-Encapsulate Transistors UMT2N

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

page
1
page
2
Document related concepts
no text concepts found
Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
UMT2N
General purpose transistor (dual transistor)
SOT-363
FEATURES
Two 2SA1037AK chips in SOT-363 package
MARKING: T2
BDTIC
Absolute maximum ratings (Ta=25℃)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current
-150
mA
PC
Collector Power Dissipation
150
mW
Thermal Resistance from Junction to Ambient
833
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
Electrical Characteristics (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA, IC=0
-6
V
Collector cut-off current
ICBO
VCB=-60V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V, IC=-1mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
120
560
IC=-50mA, IB=-5mA
VCE=-12V, IC=-2mA, f=100MHz
VCB=-12V, IE=0, f=1MHz
www.BDTIC.com/jcst
-0.5
140
V
MHz
5
pF
Typical Characteristics
Static Characteristic
VCE= -6V
COMMON
EMITTER
Ta=25℃
-8.0uA
500
-7.2uA
-6.4uA
-2.0
-5.6uA
-1.5
-4.8uA
-1.0
-3.2uA
Ta=100℃
hFE
-2.5
hFE —— IC
600
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
-3.0
UMT2N
-4.0uA
400
Ta=25℃
300
200
-2.4uA
-1.6uA
-0.5
100
IB=-0.8uA
-0.0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VCE
0
-0.1
-10
(V)
-10
VCEsat ——
VBEsat —— IC
-1.0
-1
COLLECTOR CURRENT
IC
-100 -150
(mA)
IC
-300
BDTIC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
-0.8
Ta=25℃
-0.6
Ta=100℃
-0.4
β=10
-100
Ta=100℃
Ta=25℃
-30
-0.2
-0.0
-0.1
-1
-10
COLLECTOR CURRENT
fT
250
——
-10
-0.1
-100 -150
IC
(mA)
-1
Cob / Cib
IC
-100 -150
-10
COLLECTOR CURRENT
——
20
IC
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
Ta=25℃
(pF)
200
Cib
C
150
100
Cob
50
0
-1
-10
-100
COLLECTOR CURRENT
Pc
200
COLLECTOR POWER DISSIPATION
Pc (mW)
10
CAPACITANCE
TRANSITION FREQUENCY
fT
(MHz)
VCE=-12V
Ta=25℃
——
IC
1
-0.1
-1
REVERSE VOLTAGE
(mA)
Ta
150
100
50
0
0
25
50
www.BDTIC.com/jcst
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
-10
V
(V)
-20
Related documents