Download SOT-363 Plastic-Encapsulate Transistors UMT1N

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
UMT1N
General purpose transistors (dual transistors)
SOT-363
FEATURES
z Two 2SA1037AK chips in a package
z Mounting possible with SOT-363 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
Marking: T1
BDTIC
Equivalent circuit
Absolute maximum ratings (Ta=25℃)
Symbol
Parameter
Limits
Units
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-150
mA
Collector Dissipation
150
mW
Junction temperature
150
℃
Storage Temperature
-55~+150
℃
PC
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA,IE=0
-60
V
Collector-emitter breakdown Voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-0.1
uA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
-0.1
uA
DC current gain
hFE
VCE=-6V,IC=-1mA
Collector-emitter saturation voltage
Transition frequency
Output capacitance
VCE(sat)
IC=-50mA,IB=-5mA
fT
VCE=-12V,IE=2mA,
f=100MHz
Cob
VCB=-12V,IE=0, f=1MHz
www.BDTIC.com/jcst
120
560
-0.5
140
V
MHz
5
pF
Typical Characterisitics
Static Characteristic
-6
hFE
1000
COMMON EMITTER
Ta=25℃
hFE
-18uA
-5
-16uA
-14uA
-4
IC
——
Ta=100℃
-20uA
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
-7
UMT1N
-12uA
-3
-10uA
-8uA
-2
Ta=25℃
100
-6uA
-4uA
-1
COMMON EMITTER
VCE=-6V
IB=-2uA
-0
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VBEsat
——
-1000
-10
VCE
10
-0.1
-12
-1
-10
COLLECTOR CURRENT
(V)
IC
VCEsat
-1000
IC
-100 -150
(mA)
IC
——
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (mV)
BDTIC
-800
Ta=25℃
-600
Ta=100℃
-100
Ta=100℃
Ta=25℃
β=10
β=10
-400
-0.1
-1
COLLECTOR CURRENT
IC
——
-10
-0.1
-100 -150
-10
IC
(mA)
VBE
fT
1000
(mA)
IC
(MHz)
(mA)
fT
IC
TRANSITION FREQUENCY
T =2
5℃
a
T =1
00℃
a
-1
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
10
VCE= -12V
Ta=25℃
1
-0.5
-1.2
-1
Cob/ Cib
——
VCB/ VEB
100
-80
-10
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (V)
PC
200
——
IC
(mA)
Ta
f=1MHz
IE=0/IC=0
COLLECTOR POWER DISSIPATION
PC (mW)
Cob/ Cib (pF)
——
IC
100
-10
COMMON EMITTER
VCE=-6V
OUTPUT CAPACITANCE
-100 -150
-10
COLLECTOR CURRENT
-150
-100
COLLECTOR CURRENT
-1
Ta=25℃
Cib
10
Cob
1
0.1
-0.1
-1
150
100
50
0
www.BDTIC.com/jcst
COLLECTOR-BASE VOLTAGE
-10
VCB/ VEB (V)
-20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Nov,2011