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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC847PN
SOT-363
COMPLEMENTARY TRANSISTOR ( NPN and PNP)
FEATURES
z Epitaxial Die Construction
z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package
MAKING: 7P
BDTIC
MAXIMUM RATINGS TR1 (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current –Continuous
0.1
A
Collector Power Dissipation
200
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=30V,IE=0
15
nA
Emitter cut-off current
IEBO
VEB=5V,IC=0
15
nA
DC current gain
hFE
VCE=5V,IC=2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Noise figure
200
450
VCE(sat)
IC=10mA,IB=0.5mA
0.25
V
VCE(sat)
IC=100mA,IB=5mA
0.6
V
VBE(sat)
IC=10mA,IB=0.5mA
0.7
V
VBE(sat)
IC=100mA,IB=5mA
0.9
V
VBE(on)
VCE=5V,IC=2mA
VBE(on)
Cob
fT
NF
0.7
V
VCE=5V,IC=10mA
0.72
V
VCB=10V,IE=0,f=1MHz
6.0
pF
VCE=5V,IC=10mA,f=100MHz
VCE=5V,Ic=0.2mA,
f=1kHz,Rg=2KΩ,∆f=200Hz
www.BDTIC.com/jcst
0.58
100
MHz
10
dB
MAXIMUM RATINGS TR2 (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current –Continuous
-0.1
A
PC*
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
CHARACTERISTICS of TR2 (PNP Transistor) (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-1μA,IC=0
-5
V
BDTIC
Collector cut-off current
ICBO
VCB=-30V,IE=0
-15
nA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-15
nA
DC current gain
hFE1
VCE=-5V,IC=-2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
220
475
VCE(sat)
IC=-10mA,IB=-0.5mA
-0.3
V
VCE(sat)
IC=-100mA,IB=-5mA
-0.65
V
VBE(sat)
IC=-10mA,IB=-0.5mA
VBE(sat)
IC=-100mA,IB=-5mA
VBE(on)
VCE=-5V,IC=-2mA
VBE(on)
VCE=-5V,IC=-10mA
Cob
Transition frequency
fT
Noise figure
NF
-0.7
-0.6
VCB=-10V,IE=0,f=1MHz
VCE=-5V,IC=-10mA,f=100MHz
VCE=-5V,Ic=-0.2mA,
f=1kHz,Rg=2KΩ, ∆f=200Hz
www.BDTIC.com/jcst
V
-0.95
V
-0.75
V
-0.82
V
4.5
pF
100
MHz
10
dB
BC847PN
TR2
Typical Characteristics
Static Characteristic
-4.0
COMMON
EMITTER
Ta=25℃
-10uA
-9.0uA
IC
-3.0
DC CURRENT GAIN
-7.0uA
-6.0uA
-2.0
-5.0uA
-1.5
IC
COMMON EMITTER
VCE= -5V
Ta=100℃
-8.0uA
-2.5
——
hFE
(mA)
-3.5
COLLECTOR CURRENT
hFE
600
-4.0uA
400
Ta=25℃
200
-3.0uA
-1.0
-2.0uA
-0.5
IB=-1.0uA
-0.0
-0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
VCE
0
-0.1
-12
-1
-10
COLLECTOR CURRENT
(V)
IC
VBEsat ——
-1000
-100
IC
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-800
Ta=100 ℃
-100
Ta=25℃
Ta=25℃
-600
Ta=100 ℃
-400
β=20
β=20
-10
-0.1
-1
-10
COLLECTOR CURREMT
IC
-100
——
IC
-200
-0.1
-100
-1
-10
COLLECTOR CURREMT
(mA)
VBE
Cob/Cib
100
——
IC
-100
(mA)
VCB/VEB
f=1MHz
IE=0/IC=0
(pF)
T=
a 25
℃
CAPACITANCE
C
-10
T=
a 1
00
℃
COLLECTOR CURRENT
IC
(mA)
Ta=25 ℃
-1
Cib
10
Cob
COMMON EMITTER
VCE= -5V
1
-0.1
-0.1
-0
-300
-600
-900
-1200
-1
fT
——
IC
COLLECTOR POWER DISSIPATION
PC (mW)
fT
TRANSITION FREQUENCY
PC
250
(MHz)
300
200
100
VCE=-5V
-10
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (mV)
——
V
-20
(V)
Ta
200
150
100
50
o
Ta=25 C
www.BDTIC.com/jcst
0
0
-0
-4
-8
-12
COLLECTOR CURRENT
-16
IC
(mA)
-20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
BC847PN
TR2
Typical Characteristics
Static Characteristic
-4.0
COMMON
EMITTER
Ta=25℃
-10uA
-9.0uA
IC
-3.0
DC CURRENT GAIN
-7.0uA
-6.0uA
-2.0
-5.0uA
-1.5
IC
COMMON EMITTER
VCE= -5V
Ta=100℃
-8.0uA
-2.5
——
hFE
(mA)
-3.5
COLLECTOR CURRENT
hFE
600
-4.0uA
400
Ta=25℃
200
-3.0uA
-1.0
-2.0uA
-0.5
IB=-1.0uA
-0.0
-0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
VCE
0
-0.1
-12
-1
-10
COLLECTOR CURRENT
(V)
IC
VBEsat ——
-1000
-100
IC
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
-800
Ta=100 ℃
-100
Ta=25℃
Ta=25℃
-600
Ta=100 ℃
-400
β=20
β=20
-10
-0.1
-1
-10
COLLECTOR CURREMT
IC
-100
——
IC
-200
-0.1
-100
-1
-10
COLLECTOR CURREMT
(mA)
VBE
Cob/Cib
100
——
IC
-100
(mA)
VCB/VEB
f=1MHz
IE=0/IC=0
(pF)
T=
a 25
℃
CAPACITANCE
C
-10
T=
a 1
00
℃
COLLECTOR CURRENT
IC
(mA)
Ta=25 ℃
-1
Cib
10
Cob
COMMON EMITTER
VCE= -5V
1
-0.1
-0.1
-0
-300
-600
-900
-1200
-1
fT
——
IC
COLLECTOR POWER DISSIPATION
PC (mW)
fT
TRANSITION FREQUENCY
PC
250
(MHz)
300
200
100
VCE=-5V
-10
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (mV)
——
V
-20
(V)
Ta
200
150
100
50
o
Ta=25 C
www.BDTIC.com/jcst
0
0
-0
-4
-8
-12
COLLECTOR CURRENT
-16
IC
(mA)
-20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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