Download SOT-563 Plastic-Encapsulate Transistors EMT1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMT1
General purpose transistors (dual digital transistors)
SOT-563
FEATURES
z Two 2SA1037AK chips in a package
z Mounting possible with SOT-563 automatic mounting machines
z Transistor elements are independent,eliminating interference
Marking: T1
(3)
(2)
(1)
Equivalent circuit
BDTIC
Tr1
Tr2
(4)
(5)
(6)
Absolute maximum ratings (Ta=25℃)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current
-150
mA
PC
Collector Power Dissipation
150
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA, IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA, IC=0
-6
V
Collector cut-off current
ICBO
VCB=-60V, IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-7V, IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V, IC=-1mA
Collector-emitter saturation voltage
Transition frequency
Output capacitance
VCE(sat)
fT
Cob
120
560
IC=-50mA, IB=-5mA
VCE=-12V, IC=-2mA, f=100MHz
VCB=-12V, IE=0, f=1MHz
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-0.5
140
V
MHz
5
pF
Typical Characterisitics
EMT1
hFE
Static Characteristic
1000
-12
IC
-50uA
-45uA
-10
Ta=100℃
-8
hFE
-40uA
-35uA
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(mA)
COMMON EMITTER
Ta=25℃
——
-30uA
-6
-25uA
-20uA
-4
-15uA
-2
Ta=25℃
100
-10uA
IB=-5uA
-0
-0
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE
VBEsat
-1000
——
VCE
COMMON EMITTER
VCE=-6V
10
-8
-1
-10
-100
COLLECTOR CURRENT
(V)
IC
VCEsat
-200
IC
-150
(mA)
IC
——
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
BDTIC
-800
Ta=25℃
-600
Ta=100℃
-400
-150
Ta=100℃
-100
Ta=25℃
-50
β=10
β=10
-200
-0.1
-0
-1
-10
COLLECTOR CURRENT
IC
-100
-1
-10
(mA)
-100
COLLECTOR CURRENT
IC —— VBE
-100
Cob/ Cib
100
——
IC
(mA)
VCB/ VEB
f=1MHz
IE=0/IC=0
C (pF)
-10
o
Ta=100 C
Ta=25℃
CAPACITANCE
COLLECTOR CURRENT
IC
(mA)
Ta=25℃
-1
Cib
10
Cob
COMMON EMITTER
VCE=-6V
-0.1
-200
-300
-400
-500
-600
-700
-800
-900
1
-0.1
-1000
-1
fT
——
IC
COLLECTOR POWER DISSIPATION
PC (mW)
fT
TRANSITION FREQUENCY
PC
200
(MHz)
1000
-10
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (mV)
100
10
COMMON EMITTER
VCE=-12V
——
-20
V (V)
Ta
150
100
50
Ta=25℃
1
-0.3
-1
0
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COLLECTOR CURRENT
-10
IC
(mA)
-50
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150