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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC846S
Multi-Chip TRANSISTOR (NPN+NPN)
SOT-363
FEATURES
z
Two transistors in one package
z
Reduces number of components and board space
z
No mutual interference between the transistors
MARKING: 4Ft
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
BDTIC
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current –Continuous
0.1
A
Collector Dissipation
200
mW
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
PC
TJ
Tstg
ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA,IE=0
80
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
65
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
6
V
ICBO
VCB=30V,IE=0
15
nA
=
IC=0, VEB 5V
I EBO
5
µA
Collector cut-off current
Emitter cut-off current
hFE
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE=5V,IC=2mA
VCE(sat)(1)
IC=10mA,IB=0.5mA
VCE(sat)(2)
IC=100mA,IB=5mA
VBE(sat)
IC=10mA,IB=0.5mA
fT
Cob
VCB=5V,IE=10mA,f=100MHz
VCB=10V,IE=0,f=1MHz
www.BDTIC.com/jcst
110
0.1
0.3
0.77
V
V
V
100
MHz
1.5
pF
Typical Characterisitics
Static Characteristic
7
COMMON
EMITTER
Ta=25℃
18uA
hFE
16uA
5
14uA
12uA
4
10uA
3
8uA
6uA
2
——
IC
Ta=100℃
DC CURRENT GAIN
(mA)
IC
COLLECTOR CURRENT
hFE
1000
20uA
6
BC846S
Ta=25℃
100
4uA
1
COMMON EMITTER
VCE=5V
IB=2uA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCEsat
1000
——
VCE
10
0.1
6
1
10
COLLECTOR CURRENT
(V)
IC
VBEsat
1000
——
IC
100
(mA)
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BDTIC
Ta=100℃
100
Ta=25℃
800
Ta=25℃
600
Ta=100℃
400
β=20
10
0.1
1
10
COLLECTOR CURRENT
IC
100
——
IC
β=20
200
0.1
100
1
10
COLLECTOR CURRENT
(mA)
VBE
(mA)
—— VCB/ VEB
Cob/ Cib
100
100
IC
f=1MHz
IE=0/IC=0
(pF)
CAPACITANCE
T =2
5℃
a
1
0.1
200
COMMON EMITTER
VCE=5V
400
600
800
BASE-EMMITER VOLTAGE
fT
1000
——
Cib
10
C
10
T =1
00℃
a
COLLCETOR CURRENT
IC
(mA)
Ta=25℃
VBE
Cob
1
0.1
0.1
1000
1
10
REVERSE VOLTAGE
(mV)
IC
PC
250
——
V
20
(V)
Ta
VCE=5V
TRANSITION FREQUENCY
fT
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
Ta=25℃
100
10
1
200
150
100
50
0
www.BDTIC.com/jcst
50
10
COLLECTOR CURRENT
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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