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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors (built-in resistors) UMD3N SOT-363 DUAL DIGITAL TRANSISTOR (NPN+PNP) FEATURES z DTA114E and DTC114E transistors are built-in a package. z Transistor elements are independent, eliminating interference. z Mounting cost and area can be cut in half. 1. GND 2. IN 3. OUT External circuit 4.GND 5.IN BDTIC DTr1 R1 R2 6.OUT R2 DTr2 R1 R1=10kΩ R2=10kΩ MARKING:D3 Absolute maximum ratings (Ta=25℃) Parameter Symbol Limit Unit Supply voltage VCC 50 V Input voltage VIN -10~40 V IO 50 IC(MAX) 100 Power dissipation PD* 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Note 1: 150mW per element must not be exceeded. Electrical characteristics (Ta=25℃) Parameter Input voltage Symbol Min. VI(off) Typ Max. 0.5 Unit V Conditions VCC=5V ,IO=100µA VI(on) 3 Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 μA VCC=50V, VI=0 DC current gain GI 30 Input resistance R1 7 Resistance ratio R2/R1 0.8 Transition frequency fT VO=0.3V ,IO=10mA VO=5V,IO=5mA 10 R1 1 250 13 kΩ 1.2 MHz www.BDTIC.com/jcst VCE=10V ,IE=-5mA,f=100MHz C,Jan,2012 Typical Characteristics ON Characteristics -100 OFF Characteristics -10 VO=-0.3V -30 (mA) (V) -3 -10 -1 OUTPUT CURRENT INPUT VOLTAGE IO VI(ON) DTA114E Ta=25℃ -3 Ta=100℃ -1 Ta=100℃ -0.3 Ta=25℃ -0.1 -0.03 -0.3 BDTIC -0.1 -0.1 -0.3 -3 -1 OUTPUT CURRENT IO GI IO 1000 -30 -10 —— -0.01 -0.0 -100 VCC=-5V -0.4 (mA) -0.8 -1.2 INPUT VOLTAGE VI(OFF) VO(ON) —— -1000 VO=-5V -1.6 -2.0 (V) IO IO/II=20 -300 VO(ON) 100 Ta=100℃ 30 OUTPUT VOLTAGE DC CURRENT GAIN GI (mV) 300 Ta=25℃ 10 Ta=100℃ -100 Ta=25℃ -30 3 1 -0.1 -0.3 -3 -1 OUTPUT CURRENT CO 12 —— -10 IO -10 -100 -30 -1 -10 -3 OUTPUT CURRENT (mA) VR PD 200 —— -100 -30 IO (mA) Ta f=1MHz Ta=25℃ 150 PD 8 POWER DISSIPATION OUTPUT CAPACITANCE CO (pF) (mW) 10 6 4 100 50 2 0 -0 -4 -8 -12 REVERSE BIAS VOLTAGE -16 VR (V) -20 0 0 25 50 75 AMBIENT TEMPERATURE www.BDTIC.com/jcst 100 Ta 125 (℃ ) 150 Typical Characteristics ON Characteristics 100 DTC114E OFF Characteristics 10 VCC=5V VO=0.3V Ta=100℃ (mA) (V) 1 OUTPUT CURRENT IO VI(ON) 10 INPUT VOLTAGE 25℃ 3 30 Ta=25℃ 3 100℃ 1 0.3 0.1 0.03 0.3 BDTIC 0.1 0.1 1 0.3 10 3 OUTPUT CURRENT VO(ON) 1 IO —— 0.01 0.0 100 30 0.4 (mA) IO 0.8 1.2 INPUT VOLTAGE VI(OFF) GI 1000 IO/II=20 2.0 IO VO=5V Ta=100℃ 300 25℃ GI (V) 0.3 Ta=100℃ VO(ON) 25℃ DC CURRENT GAIN OUTPUT VOLTAGE —— 1.6 (V) 0.1 100 30 10 0.03 3 0.01 3 1 10 OUTPUT CURRENT CO 10 —— 30 IO 1 0.1 100 0.3 3 1 OUTPUT CURRENT (mA) VR PD 200 —— 10 IO 30 100 125 150 (mA) Ta f=1MHz Ta=25℃ 4 2 0 150 PD 6 POWER DISSIPATION OUTPUT CAPACITANCE CO (mW) (pF) 8 0 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.BDTIC.com/jcst 100 Ta (℃ )