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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
UMB3N
SOT-363
General purpose transistors (dual transistors)
FEATURES
z Two DTA143T chips in a package
z Mounting possible with SOT-363 automatic mounting machines
z Transistor elements are independent, eliminating interference
z Mounting cost and area be cut in half
1
Marking: B3
BDTIC
Equivalent circuit
Absolute maximum ratings(Ta=25℃)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power
Junction temperature
Storage temperature
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
PC
Tj
Tstg
Value
-50
-50
-5
-100
150
150
-55~150
Units
V
V
V
mA
mW
℃
℃
Electrical characteristics (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symb
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min
-50
-50
-5
100
3.29
Typ
4.7
250
Max
-0.5
-0.5
-0.3
600
6.11
Unit
V
V
V
μA
μA
V
Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-50V
VEB=-4V
IC=-5mA,IB=-0.25mA
VCE=-5V,IC=-1mA
KΩ
MHz VCE=-10V,IE=5mA,f=100MHz
www.BDTIC.com/jcst
A,Dec,2010
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