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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMD10
SOT-563
General purpose transistors (dual transistors)
FEATURES
z Both the DTC123J chip and DTA123J chip in a package.
z Mounting possible with SOT-563 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
1
Marking: D10
BDTIC
Equivalent circuit
TR1 Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-5~12
V
IO
100
IC(MAX)
100
Power dissipation
Pd
150
Junction temperature
Tj
150
mW
℃
Storage temperature
Tstg
-55~150
℃
Output current
mA
TR1 Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Output voltage
Symbol
Min.
VI(off)
0.5
Typ
VI(on)
Max.
1.1
VCC=5V, IO=100μA
VO=0.3V, IO=5mA
V
IO/II=5mA/0.25mA
II
3.6
mA
VI=5V
Output current
IO(off)
0.5
μA
VCC=50V, VI=0
DC current gain
GI
80
Input resistance
R1
1.54
2.2
2.86
Resistance ratio
R2/R1
17
21
26
Transition frequency
fT
0.1
V
Conditions
0.3
Input current
VO(on)
Unit
VO=5V, IO=10mA
250
KΩ
-
MHz
www.BDTIC.com/jcst
VCE=10V, IE=5mA, f=100MHz
B,Jul,2011
TR2 Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
-50
V
Input voltage
VIN
-12~5
V
IO
-100
IC(MAX)
-100
Power dissipation
Pd
150
Junction temperature
Tj
150
mW
℃
Storage temperature
Tstg
-55~150
℃
Output current
mA
TR2 Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Symbol
Min.
VI(off)
-0.5
Typ
VI(on)
Max.
-1.1
Unit
V
Conditions
VCC=-5V, IO=-100μA
VO=-0.3V, IO=-5mA
BDTIC
Output voltage
-0.3
V
IO/II=-5mA/-0.25mA
II
-3.6
mA
VI=-5V
Output current
IO(off)
-0.5
μA
VCC=-50V, VI=0
DC current gain
GI
80
Input resistance
R1
1.54
2.2
2.86
Resistance ratio
R2/R1
17
21
26
Input current
Transition frequency
VO(on)
fT
-0.1
VO=-5V, IO=-10mA
250
KΩ
-
-
MHz
www.BDTIC.com/jcst
VCE=-10V, IE=-5mA, f=100MHz
B,Jul,2011
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