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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMD22
General purpose transistors (dual transistors)
SOT-563
FEATURES
z Both the DTA143Z chip and DTC143Z chip in a package.
z Mounting possible with SOT-563 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
1
Marking: D22
BDTIC
Equivalent circuit
DTr1 Absolute maximum ratings(Ta=25℃ unless otherwise specified)
Symbol
Parameter
VCC
Supply Voltage
VIN
Input Voltage
IO
Value
Unit
50
V
-5~+30
V
100
mA
100
mA
Output Current
IC(MAX)
PD
Power Dissipation
150
mW
TJ
Junction Temperature
150
℃
TSTG
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
0.5
Unit
VI(off)
VCC=5V, IO=100μA
V
VI(on)
VO=0.3V, IO=5mA
1.3
V
VO(on)
IO=5mA, II=0.25mA
0.3
V
VI=5V
1.8
mA
VCC=50V, VI=0
0.5
μA
3.29
6.11
KΩ
8
12
Input voltage
Output voltage
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/ R1
Transition frequency
fT
VO=5V, IO=10mA
-
VO=10V, IO=5mA, f=100MHz
80
250
www.BDTIC.com/jcst
MHz
A,Dec,2010
DTr2 Absolute maximum ratings(Ta=25℃ unless otherwise specified)
Symbol
Parameter
VCC
Supply Voltage
VIN
Input Voltage
IO
IC(MAX)
Value
Unit
-50
V
-30~+5
V
-100
mA
-100
mA
Output Current
PD
Power Dissipation
150
mW
TJ
Junction Temperature
150
℃
TSTG
Storage Temperature
-55~+150
℃
Electrical characteristics (Ta=25℃ unless otherwise specified)
Parameter
Symbol
VI(off)
Test
conditions
VCC=-5V, IO=-100μA
Min
Typ
Max
-0.5
Unit
V
Input voltage
BDTIC
Output voltage
Input current
Output current
VI(on)
VO=-0.3V, IO=-5mA
-1.3
V
VO(on)
IO=-5mA, II=-0.25mA
-0.3
V
VI=-5V
-1.8
mA
VCC=-50V, VI=0
-0.5
μA
3.29
6.11
KΩ
8
12
II
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/ R1
Transition frequency
fT
VO=-5V, IO=-10mA
-
80
VO=-10V, IO=-5mA, f=100MHz
www.BDTIC.com/jcst
250
MHz
A,Dec,2010
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