Download Digital Transistors(built-in resistors) EMD9

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors(built-in resistors)
EMD9
dual digital transistors (NPN+PNP)
SOT-563
FEATURES
Two DTA114Y and DTC114Y transistors are built-in a package
1
Marking: D9
BDTIC
Equivalent circuit
DTr1 Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-6~+40
V
IO
70
IC(MAX)
100
Power dissipation
Pd
150
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Output current
mA
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min
Input voltage
VI(off)
VI(on)
0.3
Output voltage
VO(on)
Input current
0.1
II
IO(off)
DC current gain
GI
68
Input resistance
R1
7
Resistance ratio
R2/R1
3.7
fT
Max
Unit
Conditions
V
VCC=5V ,IO=100μA
VO=0.3V ,IO=1mA
0.3
V
IO=5mA, II=0.25mA
0.88
mA
0.5
μA
1.4
Output current
Transition frequency
Typ
VI=5V
VCC=50V, VI=0
VO=5V ,IO=5mA
10
13
4.7
5.7
250
KΩ
MHz
VO=10V ,IO=5mA,f=100MHz
www.BDTIC.com/jcst
B,Jul,2011
DTr2 Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
-50
V
Input voltage
VIN
-40~+6
V
IO
-70
IC(MAX)
-100
Power dissipation
Pd
150
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Output current
mA
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min
Input voltage
VI(off)
VI(on)
-0.3
Output voltage
VO(on)
Typ
Max
Conditions
V
VCC=-5V ,IO=-100μA
VO=-0.3V ,IO=-1mA
-0.3
V
IO=-5mA,II=-0.25mA
-1.4
-0.1
Unit
II
-0.88
mA
VI=-5V
Output current
IO(off)
-0.5
μA
VCC=-50V, VI=0
DC current gain
GI
68
Input resistance
R1
7
10
13
Resistance ratio
R2/R1
3.7
4.7
5.7
BDTIC
Input current
Transition frequency
fT
VO=-5V ,IO=-5mA
250
KΩ
MHz
VO=-10V ,IO=-5mA,f=100MHz
www.BDTIC.com/jcst
B,Jul,2011