Download Digital transistors (built-in resistors) EMD12

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
EMD12
SOT-563
General purpose transistors (dual transistors)
FEATURES
z Both the DTC144E chip and DTA144E chip in a package.
z Mounting possible with SOT-563 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
1
Marking: D12
BDTIC
Equivalent circuit
TR1 Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-10~40
V
IO
100
IC(MAX)
100
Power dissipation
Pd
150
Junction temperature
Tj
150
mW
℃
Storage temperature
Tstg
-55~150
℃
Output current
mA
TR1 Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Symbol
VI(off)
Min.
Typ
Max.
0.5
VI(on)
3
VCC=5V, IO=100μA
VO=0.3V, IO=2mA
V
IO/II=10mA/0.5mA
II
0.18
mA
VI=5V
Output current
IO(off)
0.5
μA
VCC=50V, VI=0
DC current gain
GI
68
Input resistance
R1
32.9
47
61.1
Resistance ratio
R2/R1
0.8
1
1.2
Input current
Transition frequency
fT
0.1
V
Conditions
0.3
Output voltage
VO(on)
Unit
VO=5V, IO=5mA
250
KΩ
-
MHz
www.BDTIC.com/jcst
VCE=10V, IE=5mA, f=100MHz
B,Jul,2011
TR2 Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
-50
V
Input voltage
VIN
-40~10
V
IO
-100
IC(MAX)
-100
Power dissipation
Pd
150
Junction temperature
Tj
150
mW
℃
Storage temperature
Tstg
-55~150
℃
Output current
mA
TR2 Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Symbol
Min.
VI(off)
-0.5
Typ
VI(on)
Max.
-3
Unit
V
Conditions
VCC=-5V, IO=-100μA
VO=-0.3V, IO=-2mA
BDTIC
-0.3
V
IO/II=-10mA/-0.5mA
II
-0.18
mA
VI=-5V
Output current
IO(off)
-0.5
μA
VCC=-50V, VI=0
DC current gain
GI
68
Input resistance
R1
32.9
47
61.1
Resistance ratio
R2/R1
0.8
1
1.2
Output voltage
Input current
Transition frequency
VO(on)
fT
-0.1
VO=-5V, IO=-5mA
250
KΩ
-
-
MHz
www.BDTIC.com/jcst
VCE=-10V, IE=-5mA, f=100MHz
B,Jul,2011
Typical Characteristics
EMD12
TR1
OFF Characteristics
ON Characteristics
100
1
VCC=5V
VO=0.3V
30
(mA)
(V)
0.3
0.1
OUTPUT CURRENT
INPUT VOLTAGE
IO
VI(ON)
10
3
Ta=25℃
Ta=100℃
1
0.3
Ta=100℃
0.03
Ta=25℃
0.01
3E-3
BDTIC
0.1
0.1
0.3
1
3
OUTPUT CURRENT
IO
VO(ON) ——
1E-3
0.0
30
10
0.4
(mA)
0.8
1.2
INPUT VOLTAGE
VI(OFF)
GI
IO
1000
1.6
IO
——
1000
IO/II=20
VO=5V
Ta=100℃
GI
300
DC CURRENT GAIN
VO(ON)
(mV)
300
OUTPUT VOLTAGE
2.0
(V)
100
Ta=100℃
Ta=25℃
30
Ta=25℃
100
30
10
3
10
0.5
1
OUTPUT CURRENT
CO
30
10
3
——
IO
1
0.1
50
0.3
(mA)
1
10
3
OUTPUT CURRENT
PD
VR
8
——
IO
30
100
125
150
(mA)
Ta
200
(mW)
f=1MHz
Ta=25℃
POWER DISSIPATION
CO
CAPACITANCE
150
PD
(pF)
6
4
2
0
100
50
0
0
5
10
REVERSE BIAS VOLTAGE
15
VR
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
(℃ )
Typical Characteristics
EMD12
TR2
OFF Characteristics
ON Characteristics
-100
-10
VCC=-5V
(mA)
(V)
VO=-0.3V
-1
OUTPUT CURRENT
INPUT VOLTAGE
I0
VI(ON)
-10
Ta=25 ℃
-1
Ta=100 ℃
Ta=100 ℃
o
Ta=25 C
-0.1
BDTIC
-0.1
-0.1
-1
-10
OUTPUT CURRENT
IO
VO(ON) ——
-0.01
-0.0
-100
-0.5
(mA)
-1.0
-1.5
-2.0
INPUT VOLTAGE
GI
IO
-3000
——
-2.5
VI(OFF)
-3.0
-3.5
(V)
IO
1000
VO=-5V
IO/II=20
DC CURRENT GAIN
OUTPUT VOLTAGE
VO(ON)
GI
(mV)
-1000
Ta=100 ℃
-100
Ta=25 ℃
-10
-1
-10
CO
——
IO
Ta=25 ℃
10
1
-0.1
-100
OUTPUT CURRENT
Ta=100 ℃
100
-1
(mA)
-10
OUTPUT CURRENT
VR
PD
3.0
——
IO
-100
(mA)
Ta
200
f=1MHz
Ta=25 ℃
(mW)
150
PD
2.0
POWER DISSIPATION
OUTPUT CAPACITANCE
CO
(pF)
2.5
1.5
1.0
100
50
0.5
0.0
0
-0
-5
-10
-15
-20
REVERSE VOLTAGE
-25
VR
(V)
-30
-35
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
(℃ )
150