Download Digital transistors (built-in resistors) EMD2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
EMD2
SOT-563
General purpose transistors (dual transistors)
FEATURES
z Both the DTA124E chip and DTC124E chip in a package
z Mounting possible with SOT-563 automatic mounting machines
z
z
Transistor elements are independent, eliminating interference
Mounting cost and area be cut in half
1
Marking: D2
BDTIC
Equivalent circuit
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-10~40
V
IO
30
IC(MAX)
100
Power dissipation
Pd
150
Junction temperature
Tj
150
mW
℃
Storage temperature
Tstg
-55~150
℃
Output current
mA
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Symbol
VI(off)
Min.
Typ
Max.
0.5
VI(on)
3
VCC=5V, IO=100μA
VO=0.2V, IO=5mA
V
IO/II=10mA/0.5mA
II
0.36
mA
VI=5V
Output current
IO(off)
0.5
μA
VCC=50V, VI=0
DC current gain
GI
56
Input resistance
R1
15.4
22
28.6
Resistance ratio
R2/R1
0.8
1
1.2
Input current
Transition frequency
fT
0.1
V
Conditions
0.3
Output voltage
VO(on)
Unit
VO=5V, IO=5mA
250
KΩ
-
MHz
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VCE=10V, IE=5mA, f=100MHz
Typical Characteristics
EMD2(NPN)
ON Characteristics
OFF Characteristics
100
10
VO=0.2V
3
(mA)
Ta=100℃
1
I0
10
3
OUTPUT CURRENT
INPUT VOLTAGE
VI(ON)
(V)
30
Ta=25℃
Ta=100℃
1
0.3
Ta=25℃
0.1
0.03
0.3
BDTIC
0.1
0.1
0.3
1
10
3
OUTPUT CURRENT
VO(ON) ——
IO
VCC=5V
0.01
0.4
100
30
0.8
(mA)
1.2
INPUT VOLTAGE
VI(OFF)
GI
IO
IO
1000
1.6
——
2.0
(V)
1000
IO/II=20
VO=5V
GI
Ta=100℃
100
DC CURRENT GAIN
OUTPUT VOLTAGE
VO(ON)
(mV)
300
300
Ta=100℃
Ta=25℃
100
Ta=25℃
30
10
30
3
10
1
10
3
OUTPUT CURRENT
CO
——
1
0.1
100
30
IO
0.3
(mA)
1
3
PD
VR
——
10
5
OUTPUT CURRENT
IO
30
100
125
150
(mA)
Ta
200
10
(mW)
8
150
PD
6
POWER DISSIPATION
OUTPUT CAPACITANCE
CO
(pF)
f=1MHz
Ta=25℃
4
100
50
2
0
0
0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
(℃ )
Typical Characteristics
EMD2(PNP)
ON Characteristics
OFF Characteristics
-100
-10
VO=-0.2V
-30
(mA)
Ta=100℃
-1
IO
-10
OUTPUT CURRENT
INPUT VOLTAGE
VI(ON)
(V)
-3
-3
Ta=25℃
-1
Ta=100℃
-0.3
Ta=25℃
-0.1
-0.03
-0.3
BDTIC
-0.1
-0.1
-0.3
-1
-3
OUTPUT CURRENT
IO
GI
IO
——
-0.01
-0.0
-30
-10
VCC=-5V
-0.4
(mA)
-0.8
-1.2
INPUT VOLTAGE
VI(OFF)
VO(ON) ——
-1000
1000
-1.6
-2.0
(V)
IO
VO=-5V
IO/II=20
(mV)
300
-300
VO(ON)
Ta=25℃
OUTPUT VOLTAGE
DC CURRENT GAIN
GI
Ta=100℃
100
30
10
-100
Ta=100℃
Ta=25℃
-30
3
1
-0.1
-10
-0.3
-3
-1
OUTPUT CURRENT
CO
4.0
——
-10
IO
PD
VR
-30
-10
-3
OUTPUT CURRENT
——
IO
(mA)
Ta
200
f=1MHz
Ta=25℃
(mW)
150
PD
3.0
2.5
POWER DISSIPATION
(pF)
CO
-1
(mA)
3.5
OUTPUT CAPACITANCE
-100
-30
2.0
1.5
1.0
100
50
0.5
0.0
0
-0
-4
-8
-12
REVERSE BIAS VOLTAGE
-16
VR
(V)
-20
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
(℃ )
150