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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMB9
dual digital transistors (PNP+PNP)
SOT-563
FEATURES
z
Two DTA114Y chips in a package
z
Mounting possible with SOT-563 automatic mounting machines
z
Transistor elements are independent,eliminating interference
z
Mouting cost and area be cut in half
1
Marking: B9
BDTIC
Equivalent circuit
Absolute maximum ratings (Ta=25℃)
Symbol
Parameter
Value
Units
VCC
Supply Voltage
-50
V
IC(MAX)
Output Current
-100
mA
-40 to +6
V
Vi
Input Voltage
PD
Power Dissipation
150
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
Electrical Characteristics (Ta=25℃)
Parameter
Symbol
Test
Input turn-on voltage
Vi(on)
VO=-0.3V, IO=-1mA
Input cut-off voltage
Vi(off)
VCC=-5V, IO=-100µA
Output voltage
VO(on)
IO=-5mA, Ii=-0.25 mA
-0.3
V
Vi =-5V
-0.88
mA
VCC=-50V, Vi=0
-0.5
µA
Input cut-off current
Output cut-off current
Ii
IO(off)
conditions
Min
Typ
Max
Unit
-1.4
V
-0.3
V
DC current gain
Gi
VO =-5V, IO=-5mA
68
Transition frequency
fT
VO =-10V, IO=5mA, f =100MHz
Input resistance
R1
7
13
Resistance ratio
R2/R1
3.7
5.7
250
MHz
KΩ
A,Dec,2010
www.BDTIC.com/jcst
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