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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
General Description
Features
The AP2129 is a 300mA, positive Voltage regulator
ICs fabricated by CMOS process. The AP2129
provides two kinds of output voltage operation modes
for setting the output voltage. Fixed output voltage
mode senses the output voltage on VOUT, adjustable
output voltage mode needs two resistors as a voltage
divider
·
·
·
·
·
·
·
·
·
The AP2129 series have features of low dropout
voltage, low noise, high output voltage accuracy, and
low current consumption which make them ideal for
use in various battery-powered devices.
·
·
·
AP2129 has 1.0V, 1.2V, 1.8V, 2.6V, 2.8V, 3.0V and
3.3V fixed voltage version and 0.8V to 4.5V adjustable
voltage version.
AP2129
Wide Operating Voltage: 1.8V to 6V
High Output Voltage Accuracy: ±2%
High Ripple Rejection:
65dB@ f=1kHz, 45dB@ f=10kHz
Low Standby Current: 0.1μA
Low Quiescent Current: 60μA Typical
Low Output Noise: 60μVrms
Short Current Limit: 50mA
Over Temperature Protection
Compatible with Low ESR Ceramic Capacitor:
1μF for CIN and COUT
Excellent Line/Load Regulation
Soft Start Time: 50μs
Auto Discharge Resistance: RDS(ON)=60Ω
Applications
The AP2129 series are available in DFN-1.5x2-6
(1.0V, 1.2V, 1.8V, 2.6V, 2.8V, 3.0V, 3.3V) and SOT-235 (1.0V, 1.2V, 3.3V, ADJ) packages.
·
·
·
DFN-1.5x2-6
Datacom
Notebook Computers
Mother Board
SOT-23-5
Figure 1. Package Type of AP2129
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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www.BDTIC.com/DIODES
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Pin Configuration
DN Package
K Package
(DFN-1.5x2-6)
(SOT-23-5)
Pin 1 Mark
VIN
1
6
VOUT
GND
2
5
NC
Shutdown
3
4
NC
Shutdown
1
GND
2
VIN
3
5
ADJ/NC
4
VOUT
Figure 2. Pin Configuration of AP2129 (Top View)
Pin Description
Pin Number
Pin Name
DFN-1.5x2-6
SOT-23-5
1
3
VIN
2
2
GND
3
1
Shutdown
4, 5
6
NC
5
ADJ/NC
4
VOUT
Function
Input Voltage
Ground
Active High Enable Input Pin. Logic high=enable, logic low=shutdown
No Connection
Adjust Output for ADJ version/No Connection for Fixed Version
Regulated Output Voltage
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Functional Block Diagram
VIN
UVLO &
Shutdown Logic
Shutdown
Foldback
Current Limit
Thermal
Shutdown
VOUT
3MΩ
NC
VREF
GND
VIN
UVLO &
Shutdown Logic
Shutdown
Foldback
Current Limit
Thermal
Shutdown
VOUT
3MΩ
ADJ
VREF
GND
Figure 3. Functional Block Diagram of AP2129
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Ordering Information
AP2129
G1: Green
Circuit Type
TR: Tape and Reel
Package
ADJ: ADJ Output
1.0: Fixed Output 1.0V
1.2: Fixed Output 1.2V
1.8: Fixed Output 1.8V
2.6: Fixed Output 2.6V
2.8: Fixed Output 2.8V
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
K: SOT-23-5
DN: DFN-1.5x2-6
Package
SOT-23-5
DFN-1.5x2-6
Temperature Range
-40 to 85oC
-40 to 85oC
Part Number
Marking ID
Packing Type
AP2129K- ADJTRG1
GEJ
Tape & Reel
AP2129K-1.0TRG1
GEK
Tape & Reel
AP2129K-1.2TRG1
GEL
Tape & Reel
AP2129K-3.3TRG1
GEM
Tape & Reel
AP2129DN-1.0TRG1
LA
Tape & Reel
AP2129DN-1.2TRG1
MA
Tape & Reel
AP2129DN-1.8TRG1
LB
Tape & Reel
AP2129DN-2.6TRG1
MB
Tape & Reel
AP2129DN-2.8TRG1
LC
Tape & Reel
AP2129DN-3.0TRG1
MC
Tape & Reel
AP2129DN-3.3TRG1
LD
Tape & Reel
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Shutdown Input Voltage
VCE
-0.3 to VIN+0.3
V
Output Current
IOUT
450
mA
TJ
150
o
TSTG
-65 to 150
oC
TLEAD
260
oC
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
C
DFN-1.5x2-6
100
SOT-23-5
250
oC/W
Thermal Resistance (Junction to Ambient)
θJA
ESD (Human Body Model)
ESD
6000
V
ESD (Machine Model)
ESD
200
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
1.8
6
V
Operating Ambient Temperature Range
TA
-40
85
oC
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Electrical Characteristics
AP2129-1.0/1.2/1.8/2.6/2.8/3.0/3.3 Electrical Characteristics
(CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
Min
VIN=VOUT+1V, (Note 2)
1mA≤IOUT≤300mA
VIN
Typ
Max
Unit
98%*
VOUT
102%*
VOUT
V
1.8
6
V
450
IOUT(MAX)
mA
Load Regulation
ΔVOUT
/(ΔIOUT*VOUT)
VIN-VOUT=1V, (Note 2)
1mA≤IOUT≤300mA
1.5
%/A
Line Regulation
ΔVOUT
/(ΔVIN*VOUT)
VOUT+0.5V≤VIN≤6V, (Note 2)
IOUT=30mA
0.06
%/V
mV
Dropout Voltage
VDROP
Quiescent Current
IQ
Standby Current
ISTD
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
(ΔVOUT/VOUT)
/ΔT
VOUT=1.0V, IOUT=300mA
800
VOUT=1.2V, IOUT=300mA
600
VOUT=1.8V, IOUT=300mA
600
700
VOUT=2.6V/2.8V/3.0V/3.3V,
IOUT=300mA
170
300
VIN=VOUT+1V, IOUT=0mA
60
90
μA
VIN=VOUT+1V,
VSHUTDOWN in off mode
0.1
1.0
μA
f=100Hz
65
dB
f=1KHz
65
dB
f=10KHz
45
dB
IOUT=30mA, -40oC≤TJ≤85oC
±100
ppm/oC
Ripple 1Vp-p
VIN=VOUT+1V
Output Current Limit
ILIMIT
VIN-VOUT=1V, VOUT=0.98*VOUT
400
mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
50
μs
60
μVrms
Soft Start Time
RMS Output Noise
tUP
VNOISE
TA=25oC, 10Hz ≤f≤100kHz
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
Shutdown Pull Down Resistance
60
Ω
3
MΩ
Thermal Shutdown
165
Thermal Shutdown Hysteresis
30
Thermal Resistance
θJC
DFN-1.5x2-6
20
SOT-23-5
150
o
C
oC
o
C/W
Note 2: VIN=2.8V for 1.0 and 1.2 version
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Electrical Characteristics (Continued)
AP2129-ADJ Electrical Characteristics
(CIN=1μF, COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Reference Voltage
Input Voltage
Maximum Output Current
Symbol
VREF
Conditions
VIN=1.8V
1mA≤IOUT≤300mA
VIN
Min
Typ
Max
Unit
0.748
0.8
0.816
V
6
V
1.8
IOUT(MAX)
450
mA
Load Regulation
ΔVOUT
/(ΔIOUT*VOUT)
VIN-VOUT=1V,
1mA≤IOUT≤300mA
1.5
%/A
Line Regulation
ΔVOUT
/(ΔVIN*VOUT)
VOUT+0.5V≤VIN≤6V
IOUT=30mA
0.06
%/V
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
IQ
ISTD
PSRR
(ΔVOUT/VOUT)
/ΔT
Output Current Limit
ILIMIT
Short Current Limit
ISHORT
Soft Start Time
RMS Output Noise
VIN=VOUT+1V, IOUT=0mA
60
90
μA
VIN=VOUT+1V,
VSHUTDOWN in off mode
0.1
1.0
μA
Ripple 1Vp-p
VIN=VOUT+1V
f=100Hz
65
dB
f=1KHz
65
dB
f=10KHz
45
dB
±100
ppm/oC
400
mA
50
mA
50
μs
60
μVrms
IOUT=30mA, -40oC≤TJ≤85oC
VOUT=0V
tUP
VNOISE
o
TA=25 C, 10Hz ≤f≤100kHz
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
60
Ω
3
MΩ
Thermal Shutdown
165
oC
Thermal Shutdown Hysteresis
30
Shutdown Pull Down Resistance
Thermal Resistance
θJC
DFN-1.5x2-6
20
SOT-23-5
150
Sep. 2012 Rev. 1. 6
o
C
o
C/W
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics
100
o
3.5
90
3.0
80
TC=25 C
VOUT=0.8V
No Load
Supply Current (μA)
Output Voltage (V)
70
2.5
2.0
1.5
o
TC=-40 C
1.0
60
50
40
30
o
20
TC=25 C
o
TC=125 C
0.5
10
VIN=4.4V
0.0
0
50
100
150
200
250
300
350
400
0
450
0.0
500
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage(V)
Output Current (mA)
Figure 4. Output Voltage vs. Output Current
Figure 5. Supply Current vs. Input Voltage
60
120
110
VOUT=0.8V
VIN=1.8V
58
TC=25 C
56
o
100
VOUT=0.8V
VIN=1.8V
No Load
Supply Current (μA)
Supply Current (μA)
54
90
80
70
60
52
50
48
46
44
50
40
0.00
42
0.03
0.06
0.09
0.12
0.15
0.18
0.21
0.24
0.27
40
-40
0.30
-20
0
20
40
60
80
o
Case Temperature( C)
Output Current (A)
Figure 6. Supply Current vs. Output Current
Figure 7. Supply Current vs. Case Temperature
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
0.90
VOUT=0.8V
VIN=1.8V
Ouput short to GND
320
0.86
200
160
120
0.82
0.80
0.78
0.76
80
0.74
40
0
VOUT=0.8V
VIN=1.8V
0.84
240
Output Voltage (V)
Short Current (mA)
280
IO=10mA
IO=150mA
0.88
0.72
-30
-15
0
15
30
45
60
0.70
75
-30
-15
0
o
45
60
1.0
1.0
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.5
o
TC=-40 C
o
0.3
TC=125 C
0.2
TC=25 C
0.6
0.5
0.4
o
TC=-40 C
o
TC=25 C
0.3
o
TC=125 C
o
0.2
VOUT=0.8V
VIN=1.8V
0.1
75
Figure 9. Output Voltage vs. Case Temperature
Output Voltage (V)
Output Voltage (V)
30
Case Temperature ( C)
Figure 8. Short Current vs. Case Temperature
0.4
15
o
Case Temperature ( C)
VOUT=0.8V
No Load
0.1
0.0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage(V)
Output Current (A)
Figure 10. Output Voltage vs. Output Current
Figure 11. Output Voltage vs. Input Voltage
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
1.0
0.9
Output Voltge (V)
0.8
0.7
IOUT
0.6
0.5
0.4
o
TC=-40 C
0.3
o
TC=25 C
0.2
0.0
VOUT
o
TC=85 C
VOUT=0.8V
0.1
0
1
2
3
4
5
6
Input Voltage (V)
Figure 12. Output Voltage vs. Input Voltage
(IOUT=300mA)
Figure 13. Load Transient
(Conditions: CIN=COUT=1μF, VIN=2.5V, VOUT=0.8V)
IOUT
VIN
VOUT
VOUT
Figure 14. Load Transient
Figure 15. Line Transient
(Conditions: CIN=COUT=1μF, VIN=4.4V, VOUT=3.3V)
(Conditions: IOUT=30mA, CIN=COUT=1μF,
VIN=2.5 to 3.5V, VOUT=0.8V)
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
VIN
VOUT
VShutdown
VOUT
Figure 16. Line Transient
Figure 17. Soft Start Time
(Conditions: IOUT=30mA, CIN=COUT=1μF,
(Conditions: IOUT=0mA, CIN=COUT=1μF,
VIN=4 to 5V, VOUT=3.3V)
VShutdown=0 to 2V, VOUT=3.3V)
100
IOUT=10mA
IOUT=300mA
ripple=1Vpp, COUT=1μF, VOUT=0.8V
90
80
PSRR (dB)
70
VOUT
60
50
40
30
VShutdown
20
10
0
100
1000
10000
100000
Frequency (Hz)
Figure 18. Soft Start Time
Figure 19. PSRR vs. Frequency
(Conditions: IOUT=0mA, CIN=COUT=1μF,
VShutdown=0 to 2V, VOUT=0.8V)
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
2.0
100
90
80
1.6
Power Dissipation (W)
PSRR (dB)
70
60
50
40
30
1.4
1.2
1.0
0.8
0.6
20
0.4
10
0.2
0
100
1000
10000
VOUT=0.8V
No heatsink
1.8
IOUT=10mA
IOUT=300mA
ripple=1Vpp, COUT=1μF, VOUT=3.3V
0.0
-40
100000
-20
0
20
40
60
80
100
120
o
Frequency (Hz)
Case Temperature ( C)
Figure 20. PSRR vs. Frequency
Figure 21. Power Dissipation vs. Case Temperature
Sep. 2012 Rev. 1. 6
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Application
VOUT
VIN
VIN
VOUT
AP2129
Shutdown
R1
ADJ
R2
CIN
1μF
COUT
1μF
GND
VOUT=0.8*(1+R1/R2) V
VOUT
VIN
VIN
VOUT
AP2129
Shutdown
CIN
1μF
COUT
1μF
GND
VOUT=1.0V, 1.2V, 1.8V, 2.6V, 2.8V, 3.0V, 3.3V
Figure 22. Typical Application of AP2129
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Mechanical Dimensions
DFN-1.5x2-6
Unit: mm(inch)
0.174(0. 007)
0.326(0. 013)
N6
0.200(0. 008)
MIN.
N4
1.424(0. 056)
1.576(0. 062)
0.800(0.031)
1.000(0.039)
1.924(0.076)
2.076(0.082)
1.000(0. 039)
1.200(0. 047)
Pin 1 Mark
PIN #1 IDENTIFICATION
See DETAIL A
N3
0.200(0. 008)
0.300(0. 012)
0.500(0. 020)
TYP.
0.000(0. 000)
0.050(0. 002)
N1
DETAIL A
0.350(0. 014)
0.450(0. 018)
0. 127(0.005)
REF
2
1
2
1
2
1
Pin 1 options
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Mechanical Dimensions (Continued)
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
MAX
1.450(0.057)
0.950(0.037)
TYP
0.150(0.006)
0.900(0.035)
1.300(0.051)
Sep. 2012 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
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Road, Shanghai
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
Shanghai
Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Taiwan
Semiconductor
Shenzhen SIM-BCD
Office
Office (Taiwan) Company Limited
Unit
A Room
1203, Skyworth
Bldg., Gaoxin
Ave.1.S., Nanshan
Shenzhen,
4F, 298-1,
Guang Road,(Taiwan)
Nei-Hu District,
Taipei,
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Co., Ltd.District,
Shenzhen
Office
BCDRui
Semiconductor
Company
Limited
China
Taiwan
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel:
+86-755-8826
Tel: +886-2-2656
2808
Room
E, 5F, Noble 7951
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Taiwan
Fax:
+86-755-88267951
7865
Fax: +886-2-2656
28062808
Tel: +86-755-8826
Tel: +886-2-2656
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
USA Office
BCD Office
Semiconductor Corp.
USA
30920Semiconductor
Huntwood Ave.Corporation
Hayward,
BCD
CA 94544,
USA Ave. Hayward,
30920
Huntwood
Tel :94544,
+1-510-324-2988
CA
U.S.A
Fax:: +1-510-324-2988
+1-510-324-2788
Tel
Fax: +1-510-324-2788
www.BDTIC.com/DIODES
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