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ZTX452
ZTX453
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – MARCH 1994
FEATURES
* 100 Volt VCEO
* 1 Amp continuous current
* Ptot = 1 Watt
TYPICAL CHARACTERISTICS
100
hFE - Normalised Gain (%)
VCE(sat) - (Volts)
0.8
0.6
IC/IB=10
0.4
0.2
0
0.01
0.1
10
1
80
C
B
VCE=10V
60
40
IC - Collector Current (Amps)
0.01
0.1
1
10
IC - Collector Current (Amps)
hFE v IC
VCE(sat) v IC
1.4
2.0
1.2
1.6
VBE - (Volts)
VBE(sat) - (Volts)
1.8
IC/IB=10
1.4
1.2
1.0
PARAMETER
SYMBOL
ZTX452
ZTX453
UNIT
Collector-Base Voltage
VCBO
100
120
V
Collector-Emitter Voltage
VCEO
80
100
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
PARAMETER
SYMBOL
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
100
120
V
IC=100µ A
Collector-Emitter
Sustaining Voltage
VCEO(sus)
80
100
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
5
V
IE=100µ A
Collector Cut-Off
Current
ICBO
0.1
0.1
µA
µA
VCB=80V
VCB=100V
Emitter Cut-Off
Current
IEBO
0.1
0.1
µA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.7
0.7
V
IC=150mA, IB=15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.3
1.3
V
IC=150mA, IB=15mA*
Static Forward
Current Transfer
Ratio
hFE
40
10
Transition
Frequency
fT
150
Output Capacitance
Cobo
0.8
0.01
0.1
1
10
0.001
IC - Collector Current (Amps)
1
0.1
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
ZTX452
ZTX453
0.01
0.1
1
0.1
VBE(on) v IC
Single Pulse Test at Tamb=25°C
10
0.01
IC - Collector Current (Amps)
VBE(sat) v IC
10
100
VCE - Collector Voltage (Volts)
Safe Operating Area
3-178
ZTX452
MIN.
0.6
0.4
V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
1.0
0.8
0.6
IC - Collector Current (Amps)
VCE=10V
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
20
0.001
2.2
ZTX452
ZTX453
1
10
ZTX453
MAX. MIN.
150
40
10
MAX.
200
150
15
15
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
MHz
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
www.BDTIC.com/DIODES
3-177
ZTX452
ZTX453
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – MARCH 1994
FEATURES
* 100 Volt VCEO
* 1 Amp continuous current
* Ptot = 1 Watt
TYPICAL CHARACTERISTICS
100
hFE - Normalised Gain (%)
VCE(sat) - (Volts)
0.8
0.6
IC/IB=10
0.4
0.2
0
0.01
0.1
10
1
80
C
B
VCE=10V
60
40
IC - Collector Current (Amps)
0.01
0.1
1
10
IC - Collector Current (Amps)
hFE v IC
VCE(sat) v IC
1.4
2.0
1.2
1.6
VBE - (Volts)
VBE(sat) - (Volts)
1.8
IC/IB=10
1.4
1.2
1.0
PARAMETER
SYMBOL
ZTX452
ZTX453
UNIT
Collector-Base Voltage
VCBO
100
120
V
Collector-Emitter Voltage
VCEO
80
100
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
PARAMETER
SYMBOL
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
100
120
V
IC=100µ A
Collector-Emitter
Sustaining Voltage
VCEO(sus)
80
100
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
5
V
IE=100µ A
Collector Cut-Off
Current
ICBO
0.1
0.1
µA
µA
VCB=80V
VCB=100V
Emitter Cut-Off
Current
IEBO
0.1
0.1
µA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.7
0.7
V
IC=150mA, IB=15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.3
1.3
V
IC=150mA, IB=15mA*
Static Forward
Current Transfer
Ratio
hFE
40
10
Transition
Frequency
fT
150
Output Capacitance
Cobo
0.8
0.01
0.1
1
10
0.001
IC - Collector Current (Amps)
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
Single Pulse Test at Tamb=25°C
10
1
0.1
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
ZTX452
ZTX453
0.01
0.1
1
10
100
VCE - Collector Voltage (Volts)
Safe Operating Area
www.BDTIC.com/DIODES
3-178
ZTX452
MIN.
0.6
0.4
V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
1.0
0.8
0.6
IC - Collector Current (Amps)
VCE=10V
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
20
0.001
2.2
ZTX452
ZTX453
ZTX453
MAX. MIN.
150
40
10
MAX.
200
150
15
3-177
15
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
MHz
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
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