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Download FMB3906 MMPQ3906 FFB3906 PNP Multi-Chip General Purpose Amplifier
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E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. pin #1 C1 SuperSOT-6 SOIC-16 Mark: .2A Mark: MMPQ3906 C2 C1 C3 C2 C4 C4 C3 Dot denotes pin #1 FFB3906 / FMB3906 / MMPQ3906 FMB3906 FFB3906 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 1998 Fairchild Semiconductor Corporation Max FFB3906 300 2.4 415 FMB3906 700 5.6 180 Units MMPQ3906 1,000 8.0 125 240 mW mW/°C °C/W °C/W °C/W www.BDTIC.com/FAIRCHILD 4 (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage 40 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V IE = 10 µA, IC = 0 5.0 V IBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA ON CHARACTERISTICS hFE DC Current Gain * VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance IC = 0.1 mA, VCE = 1.0 V MMPQ3906 IC = 1.0 mA, VCE = 1.0 V MMPQ3906 IC = 10 mA, VCE = 1.0 V MMPQ3906 IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 60 40 80 60 100 75 60 30 FFB3906 / FMB3906 / MMPQ3906 PNP Multi-Chip General Purpose Amplifier 300 0.25 0.4 0.85 0.95 0.65 V V V V (MMPQ3906 only) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 140 kHz VEB = 0.5 V, IC = 0, f = 140 kHz 200 MHz 4.5 pF 10 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) www.BDTIC.com/FAIRCHILD (continued) 250 V CE = 1 .0V 125 °C 200 150 25 °C 100 50 0.1 - 40 °C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 V CESAT - COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 β = 10 0.25 0.2 0.15 25 °C 0.1 125°C 0.05 0 - 40 °C 1 1 0.8 - 40 °C 125 °C 0.4 0 0.1 = 25V 1 10 I C - COLLECTOR CURRENT (mA) 25 10 C obo CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 4 V CE = 1V 0.2 Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 10 1 0.1 0.01 25 25 °C 0.6 100 CB 200 Base Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature V 10 100 I C - COLLECTOR CURRENT (mA) FFB3906 / FMB3906 / MMPQ3906 PNP Multi-Chip General Purpose Amplifier 50 75 100 TA - AMBIE NT TEMP ERATURE (° C) 125 8 6 4 C ibo 2 0 0.1 1 REVERSE BIAS VOLTAGE (V) 10 www.BDTIC.com/FAIRCHILD (continued) Typical Characteristics (continued) Noise Figure vs Frequency Noise Figure vs Source Resistance 6 12 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 5 4 3 I C = 100 µA, R S = 200Ω 2 I C = 1.0 mA, R S = 200Ω 1 I C = 100 µA, R S = 2.0 kΩ 0 0.1 1 10 f - FREQUENCY (kHz) V CE = 5.0V f = 1.0 kHz 10 I C = 1.0 mA 8 6 4 I C = 100 µA 2 0 0.1 100 Switching Times vs Collector Current 100 Turn On and Turn Off Times vs Collector Current 500 500 ts tf 10 I B1 = I B2 = tr Ic t off 100 TIME (nS) 100 TIME (nS) 1 10 R S - SOURCE RESISTANCE ( kΩ ) FFB3906 / FMB3906 / MMPQ3906 PNP Multi-Chip General Purpose Amplifier t on I B1 = Ic 10 t on VBE(OFF) = 0.5V 10 Ic t off I = I = B1 B2 10 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 100 1 1 I 10 - COLLECTOR CURRENT (mA) 100 Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) 1 SOIC-16 SOT-6 0.75 0.5 SC70-6 0.25 0 0 25 50 75 100 TEMPERATURE (º C) 125 150 www.BDTIC.com/FAIRCHILD (continued) Typical Characteristics Input Impedance Voltage Feedback Ratio ) 10 100 h ie - INPUT IMPEDANCE (k Ω) 4 _ h re - VOLTAGE FEEDBACK RATIO (x10 (continued) 10 1 0.1 1 I C - COLLE CTOR CURRENT (mA) 1 0.1 0.1 10 1 I C - COLLECTOR CURRENT (mA) 10 Current Gain 1000 V CE = 10 V f = 1.0 kHz 500 h fe - CURRENT GAIN h oe - OUTPUT ADMITTANCE (µ mhos) Output Admittance 1000 VCE = 10 V f = 1.0 kHz FFB3906 / FMB3906 / MMPQ3906 PNP Multi-Chip General Purpose Amplifier 100 V CE = 10 V f = 1.0 kHz 200 100 50 4 20 10 0.1 1 I C - COLLECTOR CURRENT ( mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 www.BDTIC.com/FAIRCHILD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G www.BDTIC.com/FAIRCHILD