Download QFET FQD6N60C 600V N-Channel MOSFET

®
FQD6N60C
600V N-Channel MOSFET
Features
Description
• 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
• Low gate charge ( typical 16 nC )
• Low Crss ( typical 7 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
D
!
D
●
◀
G
G!
D-PAK
S
FQD Series
▲
●
●
!
S
Absolute Maximum Ratings
Symbol
Parameter
FQD6N60C
Units
600
V
4
A
2.4
A
16
A
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
300
mJ
IAR
Avalanche Current
(Note 1)
4.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
8.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
80
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Continuous (TC = 100°C)
(Note 1)
- Derate above 25°C
0.78
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
Typ
Max
Units
--
1.56
°C/W
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2005 Fairchild Semiconductor Corporation
1
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FQD6N60C Rev. A
FQD6N60C 600V N-Channel MOSFET
QFET
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQD6N60C
FQD6N60CTM
DPAK
380mm
16mm
2500
FQD6N60C
FQD6N60CTF
DPAK
380mm
16mm
2000
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
--
--
V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
1.7
2.0
Ω
--
4.8
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.0 A
gFS
Forward Transconductance
VDS = 40 V, ID = 2.0 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
620
810
pF
--
65
85
pF
--
7
10
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 5.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 5.5 A,
VGS = 10 V
(Note 4, 5)
--
15
40
ns
--
45
100
ns
--
45
100
ns
--
45
100
ns
--
16
20
nC
--
3.5
--
nC
--
6.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
16
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 4.0 A
--
--
1.4
V
trr
Reverse Recovery Time
--
310
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 5.5 A,
dIF / dt = 100 A/µs
--
2.1
--
µC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
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FQD6N60C Rev. A
FQD6N60C 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
0
10
10
ID, Drain Current [A]
1
10
ID, Drain Current [A]
Figure 2. Transfer Characteristics
-1
10
1
o
150 C
o
-55 C
10
0
o
25 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
10
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-1
-2
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1
5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
6
VGS = 10V
4
3
VGS = 20V
2
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
0
0
2
4
6
8
10
12
-1
10
14
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Ciss
600
Coss
400
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
1.2
1.4
1.6
1.8
2.0
12
VDS = 120V
10
800
1.0
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
0.8
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 5.5A
0
-1
10
0
10
0
1
10
VDS, Drain-Source Voltage [V]
0
4
8
12
16
QG, Total Gate Charge [nC]
3
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FQD6N60C Rev. A
FQD6N60C 600V N-Channel MOSFET
Typical Performance Characteristics
FQD6N60C 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 2.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2
10
4.5
ID, Drain Current [A]
ID, Drain Current [A]
Operation in This Area
is Limited by R DS(on)
10 µs
1
10
100 µs
1 ms
10 ms
DC
0
10
3.0
1.5
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
10
1
2
10
0.0
25
3
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
150
TC, Case Temperature [℃]
Zθ JC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
10
0
D = 0 .5
0 .2
※ N o te s :
1 . Z θ J C( t) = 1 .5 6 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .1
10
0 .0 5
-1
0 .0 2
0 .0 1
10
s in g le p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
4
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FQD6N60C Rev. A
FQD6N60C 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
VDS (t)
VDD
DUT
10V
ID (t)
tp
tp
5
Time
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FQD6N60C Rev. A
FQD6N60C 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
6
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FQD6N60C Rev. A
FQD6N60C 600V N-Channel MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
7
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FQD6N60C Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
8
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FQD6N60C Rev. A
FQD6N60C 600V N-Channel MOSFET
TRADEMARKS