Download FDPF035N06B_F152

FDPF035N06B_F152
N-Channel PowerTrench® MOSFET
60 V, 88 A, 3.5 mΩ
Features
Description
• RDS(on) = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
superior switching performance.
• Low FOM RDS(on)*QG
• Low Reverse Recovery Charge, Qrr
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
Applications
• Fast Switching Speed
• Synchronous Rectification for ATX / Server / Telecom PSU
• 100% UIL Tested
• Battery Protection Circuit
• RoHS Compliant
• Motor Drives and Uninterruptible Power Supplies
• Renewable System
D
G
GD S
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Unit
V
±20
V
- Continuous (TC = 25oC, Silicon Limited)
88
- Continuous (TC = 100oC, Silicon Limited)
62
- Pulsed
(Note 1)
352
A
(Note 2)
600
mJ
6.0
V/ns
(Note 3)
A
(TC = 25oC)
46.3
W
- Derate above 25oC
0.31
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
FDPF035N06B_F152
60
-55 to +175
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
FDPF035N06B_F152
RθJC
Thermal Resistance, Junction to Case, Max
3.24
RθJA
Thermal Resistance, Junction to Ambient, Max
62.5
Unit
oC/W
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B_F152 Rev.C0
1
www.fairchildsemi.com
FDPF035N06B_F152 Channel PowerTrench® MOSFET
April 2013
Device Marking
FDPF035N06B
Device
FDPF035N06B_F152
Package
TO-220F
Packaging Type
Tube
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
60
-
-
V
-
0.03
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250μA, VGS = 0V
VDS = 48V, VGS = 0V
-
-
1
μA
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
nA
ID = 250μA, Referenced to
25oC
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
2
-
4
V
Static Drain to Source On Resistance
-
2.91
3.5
mΩ
gFS
Forward Transconductance
VGS = 10V, ID = 88A
VDS = 10V, ID = 88A
-
176
-
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss(er)
Energy Related Output Capacitance
Qg(tot)
Total Gate Charge at 10V
-
6035
8030
pF
-
1685
2240
pF
-
55
-
pF
-
2619
-
pF
-
76
99
nC
-
29
-
nC
-
12
-
nC
(Note 4)
-
5.2
-
V
(Note 5)
-
67.3
-
nC
-
92.4
-
nC
-
32
74
ns
-
33
76
ns
-
56
122
ns
-
23
56
ns
-
2.0
-
Ω
VDS = 30V, VGS = 0V
f = 1MHz
VDS = 30V, VGS = 0V
VDS = 30V, ID = 100A
VGS = 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
Vplateau
Gate Plateau Volatge
Qsync
Total Gate Charge Sync.
VDS = 0V, ID = 50A
Qoss
Output Charge
VDS = 30V, VGS = 0V
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
ESR
Equivalent Series Resistance (G-S)
VDD = 30V, ID = 100A
VGS = 10V, RGEN = 4.7Ω
(Note 4)
f = 1MHz
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
88
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
352
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 88A
-
-
1.25
V
trr
Reverse Recovery Time
71
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 100A
dIF/dt = 100A/μs
-
78
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 20A, Starting TJ = 25°C
3. ISD ≤ 100A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
5. See the test circuit in page 8
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B_F152 Rev.C0
2
www.fairchildsemi.com
FDPF035N06B_F152 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
400
200
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
100
10
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
2
0.1
ID, Drain Current[A]
ID, Drain Current[A]
100
VGS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
o
25 C
o
o
10
-55 C
175 C
1
1
VDS, Drain-Source Voltage[V]
10
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3
4
5
6
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3.5
200
IS, Reverse Drain Current [A]
RDS(ON) [mΩ],
Drain-Source On-Resistance
100
VGS = 10V
3.0
VGS = 20V
2.5
o
o
175 C
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
2.0
0
50
100
150
200
ID, Drain Current [A]
250
1
0.2
300
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1000
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Ciss
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
1.4
10
10000
100
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
Crss
VDS = 12V
VDS = 30V
VDS = 48V
8
6
4
2
*Note: ID = 100A
0
1
10
VDS, Drain-Source Voltage [V]
0
60
20
40
60
Qg, Total Gate Charge [nC]
80
90
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B_F152 Rev.C0
3
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FDPF035N06B_F152 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.8
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250μA
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1.6
1.4
1.2
1.0
*Notes:
1. VGS = 10V
2. ID = 88A
0.8
0.6
-100
200
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
1000
100
100
80
10
Operation in This Area
is Limited by R DS(on)
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS = 10V
100μs
1ms
10ms
100ms
DC
SINGLE PULSE
o
TC = 25 C
0.1
60
40
20
o
TJ = 175 C
o
o
RθJC = 3.24 C/W
RθJC = 3.24 C/W
0.01
0.1
1
10
VDS, Drain-Source Voltage [V]
0
25
100
Figure 11. Eoss vs. Drain to Source Voltage
200
100
IAS, AVALANCHE CURRENT (A)
2.5
EOSS, [μJ]
175
Figure 12. Unclamped Inductive
Switching Capability
3.0
2.0
1.5
1.0
0.5
0.0
50
75
100
125
150
o
TC, Case Temperature [ C]
0
10
20
30
40
50
VDS, Drain to Source Voltage [V]
TJ = 25 oC
10
1
0.001
60
TJ = 150
0.01
0.1
oC
1
10
100
1000
tAV, TIME IN AVALANCHE (ms)
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B_F152 Rev.C0
4
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FDPF035N06B_F152 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDPF035N06B_F152 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
Thermal Response [ZθJC]
4
0.5
1
0.2
0.1
0.05
0.02
0.01
Single pulse
PDM
t1
t2
*Notes:
0.1
o
1. ZθJC(t) = 3.24 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
-5
10
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
-1
10
1
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B_F152 Rev.C0
5
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FDPF035N06B_F152 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
D
G
S
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B_F152 Rev.C0
6
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FDPF035N06B_F152 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B_F152 Rev.C0
7
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FDPF035N06B_F152 N-Channel PowerTrench® MOSFET
Total Gate Charge Qsync. Test Circuit & Waveforms
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B_F152 Rev.C0
8
www.fairchildsemi.com
FDPF035N06B_F152 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-220F
* Front/Back Side Isolation Voltage : AC 2500V
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©2013 Fairchild Semiconductor Corporation
FDPF035N06B_F152 Rev.C0
9
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tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Rev. I64
©2013 Fairchild Semiconductor Corporation
FDPF035N06B_F152 Rev.C0
10
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FDPF035N06B_F152 N-Channel PowerTrench® MOSFET
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