Download MJE 200 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

MJE200
MJE200
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.)
• Complement to MJE210
TO-126
1
1. Emitter
2.Collector
3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Value
40
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter- Base Voltage
IC
Collector Current
PC
Collector Dissipation (TC=25°C)
TJ
TSTG
Units
V
25
V
8
V
5
A
15
W
Junction Temperature
150
°C
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC=10mA, IB=0
ICBO
Collector Cut-off Current
VCB=40V, IE=0
VCB=40V, IE=0 @ TJ=125°C
IEBO
Emitter Cut-off Current
VBE=8V, IC=0
hFE
DC Current Gain
VCE=1V, IC=500mA
VCE=1V, IC=2A
VCE=2V, IC=5A
VCE(sat)
Min.
25
70
45
10
Max.
Units
V
100
100
nA
µA
100
nA
180
Collector-Emitter Saturation Voltage
IC=500mA, IB=50mA
IC=2A, IC=200mA
IC=5A, IB=1A
VBE(sat)
Base- Emitter Saturation Voltage
IC=5A, IB=1A
2.5
V
VBE(on)
Base-Emitter ON Voltage
VCE=1V, IC=2A
1.6
V
fT
Current Gain Bandwidth Product
VCE=10V, IC=100mA
Cob
Output Capacitance
VCB=10V, IE=0, f=0.1MHz
0.3
0.75
1.8
65
V
V
V
MHz
80
pF
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©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJE200
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
hFE, DC CURRENT GAIN
1000
VCE = 2V
100
VCE=1V
10
1
0.01
0.1
1
10
10
IC = 10 IB
1
0.1
0.01
0.01
IC[A], COLLECTOR CURRENT
V BE(sat)
V CE(sat)
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
1000
IC[A], COLLECTOR CURRENT
Cob[pF], CAPACITANCE
f=0.1MHZ
IE=0
100
10
10
10
5m
5
1m 00µ s
s
0µ
s
s
DC
1
0.1
1
0.1
1
10
100
VCB[V], COLLECTOR BASE VOLTAGE
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector Output Capacitance
Figure 4. Safe Operating Area
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
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©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJE200
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
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©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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any time without notice in order to improve design.
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Not In Production
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The datasheet is printed for reference information only.
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©2001 Fairchild Semiconductor Corporation
Rev. H3