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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /
MMBFJ112_SB51338 / MMBFJ113
N-Channel Switch
Features
• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
• Sourced from Process 51.
• Source & Drain are interchangeable.
MMBFJ111
MMBFJ112
MMBFJ112_SB51338
MMBFJ113
J111
J112
J113
G
S
G
S
TO-92
D
SOT-23
Mark: MMBFJ111 - 6P
D
MMBFJ112 - 6R
NOTE: Source & Drain
MMBFJ112_SB51338 - 6R
are interchangeable.
MMBFJ113 - 6S
Absolute Maximum Ratings* Ta = 25C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
35
V
VGS
Gate-Source Voltage
-35
V
IGF
Forward Gate Current
50
mA
-55 to +150
C
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
Ta = 25C unless otherwise noted
Parameter
Max.
J111-113
*MMBFJ111-113
Total Device Dissipation
Derate above 25C
625
5.0
350
2.8
RJC
Thermal Resistance, Junction to Case
125
RJA
Thermal Resistance, Junction to Ambient
357
PD
Units
mW
mW/C
C/W
556
C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
1
www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
August 2012
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Typ.
Max.
Units
-1.0
nA
-10
-5.0
-5.0
-3.0
V
V
V
V
1.0
nA
Off Characteristics
BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0A, VDS = 0
IGSS
VGS(off)
ID(off)
-35
Gate Reverse Current
VGS = -15V, VDS = 0
Gate-Source Cutoff Voltage
VDS = 5.0V, ID = 1.0A
Drain Cutoff Leakage Current
VDS = 5.0V, VGS = -10V
111
112
MMBFJ112_SB51338
113
-3.0
-1.0
-3.0
-0.5
V
On Characteristics
IDSS
rDS(on)
Zero-Gate Voltage Drain
Current*
VDS = 15V, IGS = 0
111
112
113
Drain-Source On Resistance
VDS  0.1V, VGS = 0
111
112
113
20
5.0
2.0
mA
mA
mA
30
50
100



Small Signal Characteristics
Cdg(on)
Csg(on)
Drain Gate & Source Gate On
Capacitance
VDS = 0, VGS = 0, f = 1.0MHz
28
pF
Cdg(off)
Drain-Gate Off Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
5.0
pF
Csg(off)
Source-Gate Off Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
5.0
pF
* Pulse Test: Pulse Width  300s, Duty Cycle  3.0%
Typical Performance Characteristics
Common Drain-Source
- TRANSCONDUCTANCE (mmhos)
- DRAIN CURRENT (mA)
- 0.2 V
8
- 0.4 V
6
- 0.6 V
4
- 0.8 V
- 1.0 V
2
- 1.2 V
0
0
0.4
0.8
1.2
1.6
VDS - DRAIN-SOURCE VOLTAGE (V)
2
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
2
g
fs
I
- 1.4 V
100
r DS
50
50
g
20
20
fs
10
I DSS
_5
0.5
_
I DSS , g fs @ V DS = 15V,
V GS = 0 PULSED
r DS @ 1.0 mA, V GS = 0
V GS(off) @ V DS = 15V,
I D = 1.0 nA
_
_
1
2
5
V GS (OFF) - GATE CUTOFF VOLTAGE (V)
10
_
5
10
- DRAIN "ON" RESISTANCE (Ω
Ω)
T A = 25°C
TYP V GS(off) = - 2.0 V
V GS = 0 V
100
DS
D
Parameter Interactions
r
10
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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Electrical Characteristics
Transfer Characteristics
Transfer Characteristics
16
- DRAIN CURRENT (mA)
VGS(off) = - 3.0 V
- 55°C
25°C
125°C
30
VGS(off) = - 2.0 V
125°C
25°C
- 55°C
20
V DS = 15 V
10
VGS(off) = - 1.6 V
25°C
125°C
12
8
VGS(off) = - 1.1 V
125°C
25°C
- 55°C
4
I
I
0
0
0
-1
-2
-3
VGS - GATE-SOURCE VOLTAGE (V)
0
VGS(off) = - 3.0 V
- 55°C
25°C
125°C
20
VGS(off) = - 2.0 V
- 55°C
25°C
125°C
10
fs
V DS = 15 V
0
0
-1
-2
VGS - GATE-SOURCE VOLTAGE (V)
-3
r DS - NORMALIZED RESISTANCE ( Ω )
On Resistance vs Drain Current
100
125°C
V GS(off)
TYP = - 2.0V
50
25°C
20
125°C
V GS(off)
- 55°C
TYP = - 7.0V
25°C
r DS @ V GS = 0
- 55°C
10
1
2
ID
5
10
20
- DRAIN CURRENT (mA)
50
-0.5
-1
-1.5
VGS - GATE-SOURCE VOLTAGE (V)
Transfer Characteristics
- TRANSCONDUCTANCE (mmhos)
30
g
g fs - TRANSCONDUCTANCE (mmhos)
Transfer Characteristics
r DS - DRAIN "ON" RESISTANCE (Ω)
V DS = 15 V
- 55°C
D
D
- DRAIN CURRENT (mA)
40
100
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
3
30
V GS(off) = - 1.6 V
- 55°C
25°C
125°C
20
VGS(off) = - 1.1 V
10
- 55°C
25°C
125°C
V DS = 15 V
0
0
-0.5
-1
-1.5
VGS - GATE-SOURCE VOLTAGE (V)
Normalized Drain Resistance
vs Bias Voltage
100
50
20
10
V GS(off) @ 5.0V, 10 μA
r DS
r DS =
V GS
1 -________
V GS(off)
5
2
1
0
0.2
0.4
0.6
0.8
1
VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)
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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Typical Performance Characteristics (continued)
- OUTPUT CONDUCTANCE ( μ mhos)
TA = 25°C
V DG = 15V
f = 1.0 kHz
10
V GS(off) = - 1.4V
V GS(off) = - 3.0V
1
0.1
1
I D - DRAIN CURRENT (mA)
100
os
100
Output Conductance
vs Drain Current
10
T A = 25°C
10
√
e n - NOISE VOLTAGE (nV / Hz)
C is (C rs ) - CAPACITANCE (pF)
C is (V DS = 20)
C rs (V DS = 0)
-4
-8
-12
-16
V GS - GATE-SOURCE VOLTAGE (V)
V GS(off) = - 2.0V
V GS(off) = - 0.85V
0.1
0.01
= 0.21 @ f ≥ 1.0 kHz
10
5
I D = 1.0 mA
I D = 10 mA
1
0.01
-20
P D - POWER DISSIPATION (mW)
e n - NOISE VOLTAGE (nV / √ Hz)
f = 10 Hz
f = 100 Hz
f = 1.0 kHz
10
f = 10 kHz
f = 100 kHz
0.1
1
- DRAIN CURRENT (mA)
1
10
f - FREQUENCY (kHz)
100
Power Dissipation vs
Ambient Temperature
V DG = 15V
D
10
V DG = 15V
Noise Voltage vs Current
I
0.1
I D - DRAIN CURRENT (mA)
50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz
100
1
0.01
10V
15V
20V
Noise Voltage vs Frequency
C is (V DS = 0)
0
5.0V
10V
15V
20V
1
100
f = 0.1 - 1.0 MHz
1
5.0V
10V
15V
20V
V GS(off) = - 5.0V
Capacitance vs Voltage
100
10
V DG = 5.0V
f = 1.0 kHz
g
g fs - TRANSCONDUCTANCE (mmhos)
Transconductance
vs Drain Current
10
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
4
700
600
TO-92
500
SOT-23
400
300
200
100
0
0
25
50
75
100
TEMPERATURE ( o C)
125
150
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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Typical Performance Characteristics (continued)
25
V DD = 3.0V
t r (ON)
20
15
t r APPROX. I D INDEPENDENT
VGS(off) = 3.0V
T A = 25°C
I D = 6.6 mA
10
2.5 mA
- 6.0V
t d (ON)
V GS = -12V
5
0
0
V GS(off)
-2
-4
-6
-8
-10
- GATE-SOURCE CUTOFF VOLTAGE (V)
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
5
Switching Turn-Off Time
vs Drain Current
t d(OFF) ,t OFF - TURN-OFF TIME (ns)
t r(ON) ,t d(ON)- TURN-ON TIME (ns)
Switching Turn-On Time
vs Gate-Source Voltage
100
T A = 25°C
VGS(off)= -2.2V
80
V GS = -12V
- 4.0V
t (off)
60 - 7.5V
t d(off) DEVICE
V GS(off) INDEPENDENT
40
20
0
V DD = 3.0V
t d(off)
0
2
4
6
8
I D - DRAIN CURRENT (mA)
10
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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Typical Performance Characteristics (continued)
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I61
© Fairchild Semiconductor Corporation
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