Download FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ

FQP11P06
P-Channel QFET® MOSFET
-60 V, -11.4 A, 175 mΩ
Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild s proprietary,
planar stripe, DMOS technology. This advanced
technology has been especially tailored to minimize onstate resistance, provide superior switching performance,
and withstand a high energy pulse in the avalanche and
commutation modes. These devices are well suited for low
voltage applications such as automotive, DC/DC
converters, and high efficiency switching for power
management in portable and battery operated products.
• -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V,
ID = -5.7 A
•
•
•
•
Low Gate Charge (Typ. 13 nC)
Low Crss (Typ. 45 pF)
100% Avalanche Tested
175oC Maximum Junction Temperature Rating
FQP11P06 — P-Channel QFET® MOSFET
November 2013
S
G
G
D
S
TO-220
D
Absolute Maximum Ratings T
Symbol
VDSS
ID
o
C
= 25 C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP11P06
-60
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
dv/dt
PD
TJ, TSTG
TL
- Pulsed
Unit
V
-11.4
A
-8.05
A
-45.6
A
± 25
V
(Note 2)
160
mJ
(Note 1)
-11.4
A
(Note 1)
5.3
-7.0
53
0.35
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
FQP11P06
2.85
Unit
°C/W
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RθCS
Thermal Resistance, Case-to-Sink, Typ.
0.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
°C/W
©2004 Fairchild Semiconductor Corporation
FQP11P06 Rev. C0
1
www.fairchildsemi.com
Part Number
FQP11P06
Electrical Characteristics T
Symbol
Package
TO-220
Top Mark
FQP11P06
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
o
C
= 25 C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
-60
--
--
V
--
-0.07
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
--
--
-1
µA
VDS = -48 V, TC = 150°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -5.7 A
--
0.14
0.175
Ω
gFS
Forward Transconductance
VDS = -30 V, ID = -5.7 A
--
5.1
--
S
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
420
550
pF
--
195
250
pF
--
45
60
pF
--
6.5
25
ns
--
40
90
ns
--
15
40
ns
--
45
100
ns
--
13
17
nC
FQP11P06 — P-Channel QFET® MOSFET
Package Marking and Ordering Information
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -5.7 A,
RG = 25 Ω
(Note 4)
VDS = -48 V, ID = -11.4 A,
VGS = -10 V
(Note 4)
--
2.0
--
nC
--
6.3
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-11.4
ISM
--
--
-45.6
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -11.4 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
83
--
ns
Reverse Recovery Charge
VGS = 0 V, IS = -11.4 A,
dIF / dt = 100 A/µs
--
Qrr
--
0.26
--
µC
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.44 mH, IAS = -11.4 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ -11.4 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
©2004 Fairchild Semiconductor Corporation
FQP11P06 Rev. C0
2
www.fairchildsemi.com
VGS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
Top :
-ID, Drain Current [A]
1
0
10
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
-1
10
10
-ID , Drain Current [A]
1
10
175℃
25℃
0
10
-55℃
※ Notes :
1. VDS = -30V
2. 250µ s Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
FQP11P06 — P-Channel QFET® MOSFET
!
-IDR , Reverse Drain Current [A]
RDS(on) [Ω],
Drain-Source On-Resistance
0.8
0.6
VGS = - 10V
0.4
VGS = - 20V
0.2
※ Note : TJ = 25℃
10
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
175℃
20
30
40
10
50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1200
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
Capacitance [pF]
0
10
-1
0
800
-VGS, Gate-Source Voltage [V]
0.0
1
10
Coss
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
600
400
Crss
200
0
-1
10
0
10
VDS = -30V
8
10
VDS = -48V
6
4
2
※ Note : ID = -11.4 A
0
1
0
2
4
6
8
10
12
14
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2004 Fairchild Semiconductor Corporation
FQP11P06 Rev. C0
10
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
-BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 µA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -5.7 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
FQP11P06 — P-Channel QFET® MOSFET
!
12
Operation in This Area
is Limited by R DS(on)
2
10
100 µs
-ID, Drain Current [A]
-ID, Drain Current [A]
10
1 ms
1
10
10 ms
DC
0
10
※ Notes :
o
1. TC = 25 C
8
6
4
2
o
2. TJ = 175 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
ZθJC(t), Thermal Response [oC/W]
75
100
125
150
175
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
※ N o te s :
1 . Z θ J C ( t) = 2 .8 5 ℃ / W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
0 .0 5
10
0 .0 2
-1
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
FQP11P06 Rev. C0
4
www.fairchildsemi.com
FQP11P06 — P-Channel QFET® MOSFET
200nF
200nF
12V
VGS
Same
Same T
Ty
ype
as DUT
DUT
50KΩ
50K
Ω
Qg
300nF
300nF
VDS
VGS
Qgs
Qgd
DUT
DUT
IG = const.
Charg
Ch
arge
e
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
t on
td(on
d( on))
VDD
VGS
VGS
t of
offf
tr
td(of
d( offf)
tf
10
10%
%
DUT
VGS
VDS
90%
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDS
DSS
S
1
-----------------------------EAS = ---- L IAS2 ------2
BVDS
DSS
S - VDD
L
tp
ID
RG
VGS
Tim
Ti
me
VDD
VDD
VDS (t)
(t))
ID (t
DUT
DUT
IAS
BVDSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2004 Fairchild Semiconductor Corporation
FQP11P06 Rev. C0
5
www.fairchildsemi.com
FQP11P06 — P-Channel QFET® MOSFET
+
VDS
DUT
_
I SD
L
Driver
Driv
er
RG
VGS
VGS
( Driver
Driver )
I SD
( DUT )
Compliment of DUT
Comp
(N-C
(N-Channel
hannel))
VDD
• dv/dt cont
ntrrolled b
byy RG
• ISD con
onttrol
ollled by pu
pullse pe
perriod
Gate P
Pul
ulsse W idth
ul
D = -------------------------Gate
te Pul
Ga
Pulse Per
Period
10
10V
V
Body
Bo
dy D
Diiod
ode
eR
Re
everse C
Cu
urren
entt
IRM
di//dt
di
IFM , Bo
Body
dy D
Diiod
ode
eF
For
orw
ward Cu
Curren
entt
VDS
( DUT )
VSD
Body
Bo
dy D
Diiode
For
Forw
ward Vol
Volttag
age
e Drop
Drop
VDD
Body
Bo
dy Diod
Diode
e Recov
cove
ery dv
dv/d
/dtt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2004 Fairchild Semiconductor Corporation
FQP11P06 Rev. C0
6
www.fairchildsemi.com
FQP11P06 — P-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2004 Fairchild Semiconductor Corporation
FQP11P06 Rev. C0
7
www.fairchildsemi.com
tm
FQP11P06 — P-Channel QFET® MOSFET
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Rev. I66
©2004 Fairchild Semiconductor Corporation
FQP11P06 Rev. C0
8
www.fairchildsemi.com