Download FGH50N3 300 V IGBT

FGH50N3 300 V SMPS IGBT
April 2013
FGH50N3
300 V SMPS IGBT
General Description
Features
Using Fairchild®'s planar technology, this IGBT is ideal for
many high voltage switching applications operating at high
frequencies where low conduction losses are essential. This
device has been optimized for medium frequency switch
mode power supplies.
• Low Saturation Voltage: VCE(sat) = 1.4 V max
• Low EOFF = 6.6 uJ/A
• SCWT = 8 us @ = 125℃
• 300V Switching SOA Capability
Applications
• Positive Temperature Coefficient above 50 A
• SMPS
Package
Symbol
E
C
C
G
TO-247
G
COLLECTOR
(FLANGE)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
Ratings
300
Unit
V
IC25
Collector Current Continuous, TC = 25°C
75
A
IC110
Collector Current Continuous, TC = 110°C
75
A
Collector Current Pulsed (Note 1)
240
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
ICM
150A at 300V
EAS
Single Pulse Avalanche Energy, ICE = 30A, L = 1.78mH, VDD = 50V
800
mJ
EARV
Single Pulse Reverse Avalanche Energy, IEC = 30A, L = 1.78mH, VDD = 50V
800
mJ
Power Dissipation Total TC = 25°C
463
W
Power Dissipation Derating TC > 25°C
3.7
W/°C
PD
TJ
Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
tSC
Short Circuit Withstand Time (Note 2)
8
µs
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 180V, TJ = 125°C, VGE = 12Vdc, RG = 5Ω
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©2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
1
www.fairchildsemi.com
Device Marking
FGH50N3
Device
FGH50N3
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off State Characteristics
BVCES
Collector to Emitter Breakdown Voltage ICE = 250µA, VGE = 0V
300V
-
-
V
BVECS
Emitter to Collector Breakdown Voltage IEC = 10mA, VGE = 0V
15V
-
-
V
ICES
IGES
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
VCE = 300V
TJ = 25°C
-
-
250
µA
TJ = 125°C
-
-
2.0
mA
-
-
±250
nA
TJ = 25°C
-
1.30
1.4
V
TJ = 125°C
-
1.25
1.4
V
VGE = 15V
-
180
-
nC
VGE = 20V
-
228
-
nC
VGE = ± 20V
FGH50N3 300 V SMPS IGBT
Package Marking and Ordering Information
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage ICE= 30A
VGE = 15V
Dynamic Characteristics
QG(ON)
VGE(TH)
VGEP
Gate Charge
ICE = 30A
VCE = 150V
Gate to Emitter Threshold Voltage
ICE = 250µA, VCE = VGE
4.0
4.8
5.5
V
Gate to Emitter Plateau Voltage
ICE = 30A, VCE = 150V
-
7.0
-
V
150
-
-
A
Switching Characteristics
SSOA
Switching SOA
TJ = 150°C, RG = 5Ω,
VGE = 15V , L = 25µH,
Vce = 300V
td(ON)I
Current Turn-On Delay Time
IGBT and Diode at TJ = 25°C,
ICE = 30A,
VCE = 180V,
VGE = 15V,
RG = 5Ω,
L = 100µH,
Test Circuit - Figure 20
-
20
-
ns
-
15
-
ns
-
135
-
ns
-
12
-
ns
-
130
-
µJ
-
92
120
µJ
IGBT and Diode at TJ = 125°C,
ICE = 30A,
VCE = 180V,
VGE = 15V,
RG = 5Ω,
L = 100µH,
Test Circuit - Figure 20
-
19
-
ns
TO-247
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON2
Turn-On Energy (Note 1)
EOFF
Turn-Off Energy (Note 2)
td(ON)I
Current Turn-On Delay Time
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON2
Turn-On Energy (Note 1)
EOFF
Turn-Off Energy (Note 2)
-
13
-
ns
-
155
190
ns
-
7
15
ns
-
225
270
µJ
-
135
200
µJ
-
-
0.27
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
NOTE:
EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT.
The diode type is specified in figure 20.
1.
2. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
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©2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
2
www.fairchildsemi.com
FGH50N3 300 V SMPS IGBT
Typical Performance Curves TJ = 25°C unless otherwise noted
200
ICE, COLLECTOR TO EMITTER CURRENT (A)
175
160
120
80
PACKAGE LIMITED
40
0
150
125
100
75
50
25
0
25
50
75
100
125
TC , CASE TEMPERATURE
150
500
30
75oC
300
VGE = 15V
200
VGE = 10V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
100
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.27oC/W, SEE NOTES
60
200
250
300
10
350
800
VCE = 180V, RG = 5Ω, TJ = 125oC
25
700
tSC
20
ISC
600
15
500
10
400
5
300
200
0
2
20
9
100
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
11
12
13
14
16
15
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
60
60
DUTY CYCLE < 0.5%, VGE = 10V
PULSE DURATION = 250µs
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
150
Figure 2. Minimum Switching Safe Operating Area
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
TC =
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 125oC, RG = 5Ω, L = 100µH, V CE = 180V
400
50
0
(oC)
Figure 1. DC Collector Current vs Case
Temperature
fMAX, OPERATING FREQUENCY (kHz)
TJ = 150oC, RG = 5Ω, VGE = 15V, L = 25µH
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
VGE = 15V
50
40
30
TJ = 25oC
20
TJ = 150oC
10
TJ = 125oC
0
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
50
40
30
TJ = 25oC
20
TJ = 150oC
10
TJ = 125oC
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
0.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0.5
0.75
1.0
1.25
1.5
1.75
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
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©2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
3
www.fairchildsemi.com
FGH50N3 300 V SMPS IGBT
Typical Performance Curves TJ = 25°C unless otherwise noted (Continued)
1.4
400
RG = 5Ω, L = 100µH, VCE = 180V
1.2
EOFF TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (mJ)
RG = 5Ω, L = 100µH, VCE = 180V
1.0
TJ = 25oC, TJ = 125oC, VGE = 10V
0.8
0.6
0.4
0.2
350
300
250
TJ = 125oC, VGE = 10V, VGE = 15V
200
150
100
50
TJ = 25oC, VGE = 10V, VGE = 15V
TJ = 25oC, TJ = 125oC, VGE = 15V
0
0
0
10
20
30
40
50
60
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
20
40
50
60
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
35
100
RG = 5Ω, L = 100µH, VCE = 180V
RG = 5Ω, L = 100µH, VCE = 180V
80
trI , RISE TIME (ns)
30
TJ = 25oC, TJ = 125oC, VGE = 10V
25
60
TJ = 25oC, TJ = 125oC, VGE = 10V
40
20
20
TJ = 25oC, TJ = 125oC, VGE = 15V
15
TJ = 25oC, TJ = 125oC, VGE =15V
0
0
10
20
30
40
50
0
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
20
30
40
50
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
170
24
RG = 5Ω, L = 100µH, VCE = 180V
RG = 5Ω, L = 100µH, VCE = 180V
160
20
150
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
td(ON)I, TURN-ON DELAY TIME (ns)
10
TJ = 25oC, TJ = 125oC, VGE = 15V
140
130
120
16
TJ = 25oC, VGE = 10V, 15V
12
8
TJ = 125oC, VGE = 10V, 15V
4
110
TJ = 25oC, TJ = 125oC, VGE = 10V
0
100
0
10
20
30
40
50
60
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
20
30
40
50
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
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©2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
4
www.fairchildsemi.com
FGH50N3 300 V SMPS IGBT
Typical Performance Curves TJ = 25°C unless otherwise noted (Continued)
16
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
IG(REF) = 1mA, RL = 5Ω, TJ = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
250
200
150
100
TJ = 25oC
50
TJ = 125oC
14
12
VCE = 300V
10
8
6
VCE = 200V
4
VCE = 100V
2
TJ = -55oC
0
0
5
6
7
8
9
10
11
0
25
50
VGE, GATE TO EMITTER VOLTAGE (V)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
RG = 5Ω, L = 100µH, VCE = 180V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 60A
0.8
0.6
ICE = 30A
0.4
ICE = 15A
0
25
50
75
100
150
175
200
125
40
TJ = 125oC, L = 100µH, VCE = 180V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 60A
1
ICE = 30A
ICE = 15A
0.1
150
1
10
o
TC , CASE TEMPERATURE ( C)
100
1000
RG, GATE RESISTANCE (Ω)
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
3.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
FREQUENCY = 1MHz
C, CAPACITANCE (nF)
125
Figure 14. Gate Charge
1.2
0.2
100
QG , GATE CHARGE (nC)
Figure 13. Transfer Characteristic
1.0
75
CIES
COES
1.0
CRES
0.1
0.05
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs, TJ = 25oC
3.0
ICE = 60A
2.5
ICE = 30A
2.0
ICE = 15A
1.5
1.0
0
10
20
30
40
50
60
70
80
90
6
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
7
8
9
10
11
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
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©2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
5
www.fairchildsemi.com
FGH50N3 300 V SMPS IGBT
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves TJ = 25°C unless otherwise noted (Continued)
100
0.50
0.20
t1
0.10
10-1
PD
t2
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FFH30US30S
DIODE 49449
90%
10%
VGE
EON2
EOFF
L = 100µH
VCE
RG = 5Ω
90%
+
FGH50N3
-
ICE
10%
td(OFF)I
VDD = 180V
tfI
trI
td(ON)I
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
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©2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
6
www.fairchildsemi.com
FGH50N3 300 V SMPS IGBT
Mechanical Dimensions
TO-247A03
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©2005 Fairchild Semiconductor Corporation
FGH50N3 Rev. C0
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2005 Fairchild Semiconductor
Corporation FGH50N3 Rev. C0
8
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FGH50N3 300 V SMPS IGBT
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