Download FG H 4 0

FGH40T120SMD
1200 V, 40 A FS Trench IGBT
Features
General Description
• FS Trench Technology, Positive Temperature Coefficient
Using innovative field stop trench IGBT technology, Fairchild®’s
new series of field stop trench IGBTs offer the optimum
performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
• High Speed Switching
• Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A
• 100% of the Parts tested for ILM(1)
• High Input Impedance
• RoHS Compliant
Applications
• Solar Inverter, Welder, UPS & PFC applications.
E
C
C
G
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings T
Symbol
C
E
= 25°C unless otherwise noted
Description
Ratings
Unit
V
VCES
Collector to Emitter Voltage
1200
VGES
Gate to Emitter Voltage
±25
V
80
A
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
40
A
ILM (1)
Clamped Inductive Load Current
@ TC = 25oC
160
A
ICM (2)
Pulsed Collector Current
160
A
IC
IF
IFM
PD
o
Diode Continuous Forward Current
@ TC = 25 C
80
A
Diode Continuous Forward Current
o
40
A
240
A
W
@ TC = 100 C
Diode Maximum Forward Current
o
Maximum Power Dissipation
@ TC = 25 C
555
Maximum Power Dissipation
@ TC = 100oC
277
W
TJ
Operating Junction Temperature
-55 to +175
o
Tstg
Storage Temperature Range
-55 to +175
o
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
C
C
oC
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RθJC(IGBT)
Thermal Resistance, Junction to Case
--
0.27
o
RθJC(Diode)
Thermal Resistance, Junction to Case
--
0.89
o
RθJA
Thermal Resistance, Junction to Ambient
--
40
C/W
C/W
oC/W
Notes:
1. Vcc=600V,VGE = 15V, IC = 160A, RG =10 Ω, Inductive Load
2. Limited by Tjmax
©2013 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH40T120SMD Rev. C1
FGH40T120SMD 1200 V, 40 A FS Trench IGBT
May 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGH40T120SMD
FGH40T120SMD
TO-247
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
VGE = 0 V, IC = 250 uA
1200
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
IC = 40 mA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
4.9
6.2
7.5
V
IC = 40 A, VGE = 15 V
TC = 25oC
-
1.8
2.4
V
IC = 40 A, VGE = 15 V,
TC = 175oC
-
2.0
-
V
-
4300
-
pF
-
180
-
pF
-
100
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
Switching Characcteristics
td(on)
Turn-On Delay Time
-
40
-
ns
tr
Rise Time
-
47
-
ns
td(off)
Turn-Off Delay Time
-
475
-
ns
tf
Fall Time
-
10
-
ns
Eon
Turn-On Switching Loss
-
2.7
-
mJ
Eoff
Turn-Off Switching Loss
-
1.1
-
mJ
VCC = 600 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
Ets
Total Switching Loss
-
3.8
-
mJ
td(on)
Turn-On Delay Time
-
40
-
ns
tr
Rise Time
-
55
-
ns
td(off)
Turn-Off Delay Time
-
520
-
ns
tf
Fall Time
-
50
-
ns
Eon
Turn-On Switching Loss
-
3.4
-
mJ
Eoff
Turn-Off Switching Loss
-
2.5
-
mJ
Ets
Total Switching Loss
-
5.9
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2013 Fairchild Semiconductor Corporation
VCC = 600 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 175oC
VCE = 600 V, IC = 40 A,
VGE = 15 V
2
-
370
-
nC
-
23
-
nC
-
210
-
nC
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH40T120SMD Rev. C1
FGH40T120SMD 1200 V, 40 A FS Trench IGBT
Package Marking and Ordering Information
Symbol
VFM
Parameter
Diode Forward Voltage
TC = 25°C unless otherwise noted
Test Conditions
IF = 40 A, TC =
25oC
o
IF = 40A, TC = 175 C
trr
Diode Reverse Recovery Time
Min.
Typ.
Max.
Unit
-
3.8
4.8
V
-
2.7
-
V
-
65
-
ns
Irr
VCC = 600 V, IF = 40 A,
o
Diode Peak Reverse Recovery Current di/dt = 200 A/us, TC = 25 C
-
7.2
-
A
Qrr
Diode Reverse Recovery Charge
-
234
-
nC
trr
Diode Reverse Recovery Time
VCC = 600 V, IF = 40 A,
o
Diode Peak Reverse Recovery Current di/dt = 200 A/us, TC = 175 C
-
200
-
ns
Irr
-
18.0
-
A
Qrr
Diode Reverse Recovery Charge
-
1800
-
nC
©2013 Fairchild Semiconductor Corporation
3
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH40T120SMD Rev. C1
FGH40T120SMD 1200 V, 40 A FS Trench IGBT
Electrical Characteristics of the DIODE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
300
300
o
TC = 25 C
20V
Collector Current, IC [A]
Collector Current, IC [A]
200
12V
150
100
VGE=10V
150
12V
100
VGE=10V
0
1
2
3
4
5
6
7
8
Collector-Emitter Voltage, VCE [V]
9
0
10
0
2
3
4
5
6
7
8
Collector-Emitter Voltage, VCE [V]
9
10
4
Collector Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
o
TC = 25 C
120
o
TC = 175 C ---
80
40
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
3
80A
40A
2
IC=20A
1
25
5
50
75
100
125
150
Case Temperature TC [oC]
175
Figure 6. Saturation Voltage vs. VGE
Figure 5. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
Collector Emitter Voltage, VCE [V]
Collector Emitter Voltage, VCE [V]
1
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
160
Collector Current, IC [A]
15V
50
Figure 3. Typical Saturation Voltage
Characteristics
TC = 25 C
16
80A
12
40A
8
IC=20A
4
0
17V
200
50
0
20V
250
250
0
o
TC = 175 C
15V
17V
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
©2013 Fairchild Semiconductor Corporation
o
TC = 175 C
16
80A
12
40A
8
0
20
4
IC=20A
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH40T120SMD Rev. C1
FGH40T120SMD 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Load Current vs. Frequency
200
6000
VCC = 600V
Common Emitter
VGE = 0V , f = 1MHz
load Current : peak of square wave
o
Ciss
TC = 25 C
Collector Current, IC [A]
Cappacitance [pF]
5000
4000
3000
2000
Coss
1000
160
120
o
TC = 100 C
80
40 Duty cycle : 50%
o
Crss
T = 100 C
C
Powe Dissipation = 277 W
1
0
1k
10
10k
Collector-Emitter Voltage, VCE [V]
100k
1M
Switching Frequency, f [Hz]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
1000
Switching Time [ns]
Switching Time [ns]
tr
100
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
10
td(off)
100
tf
10
Common Emitter
VCC = 600V, VGE = 15V, IC = 40A
o
TC = 25 C
o
o
TC = 175 C
1
1
0
10
o
TC = 25 C
20
30
40
Gate Resistance, RG [Ω ]
50
Figure 11. Swithcing Loss vs.
Gate Resistance
0
10
,
TC = 175 C
20
30
40
50
Gate Resistance, RG [Ω]
60
Figure 12. Turn-on Characteristics vs.
Collector Current
tr
10
Eon
100
Switching Time [ns]
Switching Loss [mJ]
70
Eoff
1
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
o
TC = 25 C
0.1
td(on)
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
10
o
o
TC = 175 C
0
10
20
30
40
50
Gate Resistance, RG [Ω]
©2013 Fairchild Semiconductor Corporation
TC = 175 C
60
10
70
20
30
40
50
60
70
80
Collector Current, IC [A]
5
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH40T120SMD Rev. C1
FGH40T120SMD 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics
FGH40T120SMD 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Swithcing Loss vs.
Collector Current
30
1000
10
Switching Loss [mJ]
Switching Time [ns]
td(off)
100
tf
10
Eon
Eoff
1
Common Emitter
VGE = 15V, RG = 10Ω
o
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
TC = 25 C
o
TC = 175 C
o
,
TC = 175 C
0.1
1
20
40
60
10
80
20
30
40
50
60
70
80
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Gate Charge Characteristics
Figure 16. SOA Characteristics
15
IcMAX (Pulsed)
12
200V
400V
Collector Current, Ic [A]
Gate Emitter Voltage, VGE [V]
100
VCC = 600V
9
6
3
DC Operation
1
Single Nonrepetitive
0.1
o
TC = 25 C
100 150 200 250 300
Gate Charge, Qg [nC]
350
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
0
50
1ms
10 ms
10
Common Emitter
0
10µs
400
Figure 17. Forward Characteristics
100µs
IcMAX (Continuous)
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 18. Reverse Recovery Current
Reverse Recovery Currnet, Irr [A]
10
Forward Current, IF [A]
100
10
o
TC = 25 C
o
di/dt = 200A/µs
8
6
di/dt = 100A/µs
4
Vcc = 600 V, IF = 40 A
2
o
TC = 25 C
TC = 175 C ---
1
0
1
2
3
Forward Voltage, VF [V]
©2013 Fairchild Semiconductor Corporation
4
5
0
6
10
20
30
40
50
60
Foward Current, IF [A]
70
80
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH40T120SMD Rev. C1
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
400
100
Stored Recovery Charge, Qrr [nC]
Reverse Recovery Time, trr [ns]
Vcc = 600 V, IF = 40 A
o
TC = 25 C
90
80
di/dt = 100A/µs
70
di/dt = 200A/µs
60
300
di/dt = 200A/µs
200
di/dt = 100A/µs
100
Vcc = 600 V, IF = 40 A
o
TC = 25 C
0
50
0
10
20
30
40
50
60
70
0
80
10
20
30
40
50
60
Forwad Current, IF [A]
Forward Current, IF [A]
70
80
Figure 21. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.3
0.1
0.01
PDM
0.05
t1
0.02
0.01
1E-3
1E-6
single pulse
1E-5
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2013 Fairchild Semiconductor Corporation
7
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH40T120SMD Rev. C1
FGH40T120SMD 1200 V, 40 A FS Trench IGBT
Typical Performance Characteristics
FGH40T120SMD 1200 V, 40 A FS Trench IGBT
Mechanical Dimensions
TO - 247A03
©2013 Fairchild Semiconductor Corporation
8
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH40T120SMD Rev. C1
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2013 Fairchild Semiconductor Corporation
9
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH40T120SMD Rev. C1
FGH40T120SMD 1200 V, 40 A FS Trench IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
FPS™
Sync-Lock™
®
AccuPower™
F-PFS™
®*
®
®
®
AX-CAP *
FRFET
PowerTrench
SM
BitSiC™
Global Power Resource
PowerXS™
TinyBoost™
Green Bridge™
Programmable Active Droop™
Build it Now™
TinyBuck™
Green FPS™
CorePLUS™
QFET®
TinyCalc™
CorePOWER™
Green FPS™ e-Series™
QS™
TinyLogic®
Gmax™
Quiet Series™
CROSSVOLT™
TINYOPTO™
GTO™
CTL™
RapidConfigure™
TinyPower™
Current Transfer Logic™
IntelliMAX™
™
TinyPWM™
®
ISOPLANAR™
DEUXPEED
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
TranSiC®
EcoSPARK®
and Better™
SignalWise™
TriFault Detect™
EfficentMax™
MegaBuck™
SmartMax™
TRUECURRENT®*
ESBC™
MICROCOUPLER™
SMART START™
µSerDes™
MicroFET™
Solutions for Your Success™
®
MicroPak™
SPM®
®
STEALTH™
MicroPak2™
Fairchild
UHC®
SuperFET®
MillerDrive™
Fairchild Semiconductor®
Ultra FRFET™
SuperSOT™-3
MotionMax™
FACT Quiet Series™
UniFET™
SuperSOT™-6
mWSaver™
FACT®
VCX™
SuperSOT™-8
OptoHiT™
FAST®
VisualMax™
SupreMOS®
OPTOLOGIC®
FastvCore™
VoltagePlus™
OPTOPLANAR®
SyncFET™
FETBench™
XS™