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FGH40N60SF
600 V, 40 A Field Stop IGBT
Features
General Description
• High Current Capability
Using novel field stop IGBT technology, Fairchild®’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
• High Input Impedance
• Fast Switching: EOFF = 8 uJ/A
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
PD
TJ
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Unit
600
V
± 20
V
80
A
40
A
@ TC = 25 C
120
A
25oC
290
W
o
@ TC =
o
@ TC = 100 C
116
Operating Junction Temperature
Tstg
Ratings
W
-55 to +150
o
-55 to +150
oC
300
oC
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.43
o
RθJA
Thermal Resistance, Junction to Ambient
-
40
o
©2009 Fairchild Semiconductor Corporation
1
C/W
C/W
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH40N60SF Rev.C0
FGH40N60SF 600 V, 40 A Field Stop IGBT
April 2013
Device Marking
Device
Package
Packaging
Type
FGH40N60SF
FGH40N60SFTU
TO-247
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0V, IC = 250µA
600
-
-
V
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
-
0.6
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
µA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250µA, VCE = VGE
4.0
5.0
6.5
V
IC = 40A, VGE = 15V
-
2.3
2.9
V
IC = 40A, VGE = 15V,
TC = 125oC
-
2.5
-
V
-
2110
-
pF
-
200
-
pF
-
60
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
25
-
ns
tr
Rise Time
-
42
-
ns
td(off)
Turn-Off Delay Time
-
115
-
ns
tf
Fall Time
-
27
54
ns
Eon
Turn-On Switching Loss
-
1.13
-
mJ
Eoff
Turn-Off Switching Loss
-
0.31
-
mJ
VCC = 400V, IC = 40A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
Ets
Total Switching Loss
-
1.44
-
mJ
td(on)
Turn-On Delay Time
-
24
-
ns
tr
Rise Time
-
43
-
ns
td(off)
Turn-Off Delay Time
-
120
-
ns
tf
Fall Time
-
30
-
ns
Eon
Turn-On Switching Loss
-
1.14
-
mJ
Eoff
Turn-Off Switching Loss
-
0.48
-
mJ
Ets
Total Switching Loss
-
1.62
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2009 Fairchild Semiconductor Corporation
VCC = 400V, IC = 40A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 40A,
VGE = 15V
2
-
120
-
nC
-
14
-
nC
-
58
-
nC
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www.BDTIC.com/FAIRCHILD
FGH40N60SF Rev.C0
FGH40N60SF 600 V, 40 A Field Stop IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
120
Figure 2. Typical Output Characteristics
120
o
o
TC = 25 C
15V
80
20V
15V
100
Collector Current, IC [A]
100
Collector Current, IC [A]
TC = 125 C
20V
12V
60
40
10V
80
60
10V
40
20
20
VGE = 8V
VGE = 8V
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
0
0.0
6.0
Figure 3. Typical Saturation Voltage
Characteristics
6.0
120
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
Collector Current, IC [A]
o
Collector Current, IC [A]
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
80
TC = 25 C
60
o
TC = 125 C
40
20
TC = 25 C
o
TC = 125 C
80
40
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
6
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
VGE = 15V
3.5
80A
3.0
2.5
40A
2.0
IC = 20A
1.5
1.0
25
13
3
Common Emitter
o
TC = -40 C
16
12
8
40A
4
80A
IC = 20A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
©2009 Fairchild Semiconductor Corporation
8
10
12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
4.0
Collector-Emitter Voltage, VCE [V]
12V
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGH40N60SF Rev.C0
FGH40N60SF 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
40A
80A
4
IC = 20A
0
TC = 125 C
16
12
8
40A
IC = 20A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
4
20
Figure 9. Capacitance Characteristics
20
15
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Ciss
o
Gate-Emitter Voltage, VGE [V]
4000
Capacitance [pF]
8
12
16
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
5000
o
TC = 25 C
3000
Coss
2000
1000
Crss
0
0.1
TC = 25 C
12
Vcc = 100V
200V
300V
9
6
3
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
50
100
Gate Charge, Qg [nC]
150
Figure 12. Turn-on Characteristics vs.
Gate Resistance
400
200
100
10µs
10
100µs
100
Switching Time [ns]
Collector Current, Ic [A]
80A
4
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
o
TC = 125 C
10
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
©2009 Fairchild Semiconductor Corporation
1000
0
4
10
20
30
40
Gate Resistance, RG [Ω]
50
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FGH40N60SF Rev.C0
FGH40N60SF 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
500
5500
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
o
1000
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 125 C
td(off)
100
tf
10
20
30
40
50
td(on)
40
60
80
Collector Current, IC [A]
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs. Gate Resistance
10
500
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VCC = 400V, VGE = 15V
o
IC = 40A
TC = 25 C
o
TC = 125 C
Switching Loss [mJ]
o
Switching Time [ns]
tr
100
10
20
10
0
TC = 125 C
td(off)
100
tf
TC = 25 C
o
TC = 125 C
Eon
1
Eoff
0.2
0.3
10
20
40
60
0
80
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
10
20
30
40
Gate Resistance, RG [Ω]
50
Figure 18. Load Current vs. Frequency
30
Switching Loss [mJ]
10
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
Eon
o
TC = 125 C
Eoff
1
0.1
20
30
40
50
60
70
80
Collector Current, IC [A]
©2009 Fairchild Semiconductor Corporation
5
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www.BDTIC.com/FAIRCHILD
FGH40N60SF Rev.C0
FGH40N60SF 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
FGH40N60SF 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Turn off Switching
SOA Characteristics
200
Collector Current, IC [A]
100
10
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 20. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.01
0.05
0.02
0.01
0.1
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2009 Fairchild Semiconductor Corporation
6
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www.BDTIC.com/FAIRCHILD
FGH40N60SF Rev.C0
FGH40N60SF 600 V, 40 A Field Stop IGBT
Mechanical Dimensions
TO-247A03
©2009 Fairchild Semiconductor Corporation
7
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www.BDTIC.com/FAIRCHILD
FGH40N60SF Rev.C0
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
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©2009 Fairchild Semiconductor Corporation
FGH40N60SF Rev.C0
8
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FGH40N60SF 600 V, 40 A Field Stop IGBT
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