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FGH25N120FTDS
1200 V, 25 A Field Stop Trench IGBT
Features
General Description
• High Speed Switching
Using advanced field stop trench technology, Fairchild®’s
1200V trench IGBTs offer the optimum performance for hard
switching application such as solar inverter, UPS, welder and
PFC applications.
• Low Saturation Voltage: VCE(sat) = 1.60 V @ IC = 25 A
• High Input Impedance
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
C
G
G
C
TO-247
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
1200
V
VGES
Gate to Emitter Voltage
± 25
V
IC
ICM (1)
o
Collector Current
@ TC = 25 C
50
A
Collector Current
@ TC = 100oC
25
A
75
A
25
A
75
A
W
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
o
@ TC = 100 C
o
Maximum Power Dissipation
@ TC = 25 C
313
Maximum Power Dissipation
@ TC = 100oC
125
W
TJ
Operating Junction Temperature
-55 to +150
oC
Tstg
Storage Temperature Range
-55 to +150
o
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.4
o
RθJC(Diode)
Thermal Resistance, Junction to Case
-
1.25
o
RθJA
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C0
-
1
40
C/W
C/W
oC/W
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT
April 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGH25N120FTDS
FGH25N120FTDS
TO-247
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0V, IC = 250µA
1200
-
-
V
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±250
nA
IC = 25mA, VCE = VGE
3.5
6
7.5
V
IC = 25A, VGE = 15V
-
1.6
2
V
IC = 25A, VGE = 15V,
TC = 125oC
-
1.92
-
V
-
4090
-
pF
-
135
-
pF
-
75
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
26
35
ns
tr
Rise Time
-
41
53
ns
td(off)
Turn-Off Delay Time
-
151
196
ns
tf
Fall Time
-
102
132
ns
Eon
Turn-On Switching Loss
-
1.42
1.84
mJ
Eoff
Turn-Off Switching Loss
-
1.16
1.5
mJ
VCC = 600V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
Ets
Total Switching Loss
-
2.58
3.34
mJ
td(on)
Turn-On Delay Time
-
22
-
ns
tr
Rise Time
-
41
-
ns
td(off)
Turn-Off Delay Time
-
163
-
ns
tf
Fall Time
-
136
-
ns
Eon
Turn-On Switching Loss
-
2.04
-
mJ
Eoff
Turn-Off Switching Loss
-
1.58
-
mJ
Ets
Total Switching Loss
-
3.62
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C0
VCC = 600V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 600V, IC = 25A,
VGE = 15V
2
-
169
225
nC
-
33
44
nC
-
78
104
nC
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT
Package Marking and Ordering Information
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
VFM
Diode Forward Voltage
IF = 25A
trr
Diode Reverse Recovery Time
Irr
IES = 25A,
Diode Peak Reverse Recovery Current di/dt = 200A/µs
Qrr
Diode Reverse Recovery Charge
Min.
Typ.
Max
TC = 25oC
-
2.5
3.5
TC = 125oC
-
2.3
-
TC = 25oC
-
411
535
o
TC = 125 C
-
496
-
TC = 25oC
-
5.2
6.8
-
6.9
-
TC = 25oC
-
1.1
1.82
o
-
1.7
-
TC =
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C0
125oC
TC = 125 C
3
Unit
V
ns
A
µC
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
180
Figure 2. Typical Output Characteristics
180
o
o
TC = 25 C
TC = 125 C
20V
17V
15V
20V
150
12V
120
90
10V
60
9V
15V
17V
Collector Current, IC [A]
Collector Current, IC [A]
150
12V
120
90
10V
60
9V
30
30
VGE = 8V
VGE = 8V
0
0
2
4
6
Collector-Emitter Voltage, VCE [V]
0
8
0
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
VGE = 15V
100
o
TC = 25 C
o
TC = 125 C
80
Common Emitter
VCE = 20V
100
Collector Current, IC [A]
Collector Current, IC [A]
8
Figure 4. Transfer Characteristics
120
60
40
o
TC = 25 C
o
TC = 125 C
80
60
40
20
20
0
0
0
2
4
Collector-Emitter Voltage, VCE [V]
0
6
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
15
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Common Emitter
50A
2.5
5
10
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
3.0
Collector-Emitter Voltage, VCE [V]
2
4
6
Collector-Emitter Voltage, VCE [V]
2.0
25A
1.5
IC = 10A
o
TC = 25 C
16
12
8
50A
4
25A
IC = 10A
1.0
25
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C0
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT
Typical Performance Characteristics
FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Load Current vs. Frequency
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
16
12
8
50A
4
25A
IC = 10A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
15
8000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Gate-Emitter Voltage, VGE [V]
o
o
TC = 25 C
Capacitance [pF]
6000
Cies
4000
Coes
2000
TC = 25 C
12
VCC = 200V
600V
400V
9
6
3
Cres
0
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
Gate Resistance
40
80
120
160
Gate Charge, Qg [nC]
200
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
200
100
100
100µs
10
Switching Time [ns]
Collector Current, Ic [A]
10µs
1ms
10 ms
DC
1
*Notes:
0.1
tr
td(on)
o
1. TC = 25 C
o
TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1
o
TC = 125 C
10
0
10
100
1000 3000
Collector-Emitter Voltage, VCE [V]
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C0
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
5
10
20
30
40
Gate Resistance, RG [Ω ]
50
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
100
Common Emitter
VGE = 15V, RG = 10Ω
o
td(off)
o
TC = 125 C
Switching Time [ns]
Switching Time [ns]
TC = 25 C
100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
tr
td(on)
o
TC = 25 C
o
TC = 125 C
10
0
10
20
30
Gate Resistance, RG [Ω ]
40
10
50
0
20
30
40
50
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs. Gate Resistance
1000
10
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VCC = 600V, VGE = 15V
o
IC = 25A
TC = 25 C
o
TC = 125 C
o
TC = 25 C
Switching Loss [mJ]
Switching Time [ns]
10
tf
100
td(off)
o
TC = 125 C
Eon
Eoff
20
0
10
20
30
40
Collector Current, IC [A]
1
50
Figure 17. Switching Loss vs. Collector Current
0
10
20
30
40
Gate Resistance, RG [Ω ]
50
Figure 18. Turn off Switing SOA Characteristics
10
100
Common Emitter
VGE = 15V, RG = 10Ω
o
Switching Loss [mJ]
Collector Current, IC [A]
Eon
TC = 25 C
o
TC = 125 C
Eoff
1
10
Safe Operating Area
o
0.1
0
10
20
30
Collector Current, IC [A]
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C0
40
VGE = 15V, TC = 125 C
1
50
1
10
100
1000 3000
Collector-Emitter Voltage, VCE [V]
6
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Recovery Current
7
Reverse Recovery Currnet, Irr [A]
30
Forward Current, IF [A]
10
o
TJ = 125 C
o
TJ = 25 C
1
o
TC = 25 C
6
200A/µs
5
4
di/dt = 100A/µs
3
o
TC = 125 C
2
10
0.1
0
1
2
Forward Voltage, VF [V]
3
1200
Reverse Recovery Time, trr [ns]
2.0
Stored Recovery Charge, Qrr [µ C]
50
Figure 22. Reverse Recovery Time
Figure 21. Stored Charge
1.5
200A/µs
1.0
di/dt = 100A/µs
0.5
0.0
10
20
30
40
Forward Current, IF [A]
20
30
40
Forward Current, IF [A]
1000
di/dt = 100A/µs
800
200A/µs
600
400
10
50
20
30
Forward Current, IF [A]
40
Figure 23. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.1
0.5
0.2
0.1
0.05
0.01 0.02
0.01
single pulse
0.001
1E-5
0.0001
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C0
7
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT
Typical Performance Characteristics
FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT
Mechanical Dimensions
TO-247A03
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C0
8
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2009 Fairchild Semiconductor Corporation
FGH25N120FTDS Rev. C0
9
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT
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