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FGD3N60LSD
tm
IGBT
Features
Description
• High Current Capability
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide
very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.
• Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
• High Input Impedance
Applications
• HID Lamp Applications
• Piezo Fuel Injection Applications
C
C
G
G
D-PAK
E
E
Absolute Maximum Ratings
Symbol
Description
FGD3N60LSD
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 25
V
IC
Collector Current
@ TC = 25°C
6
A
Collector Current
@ TC = 100°C
3
A
25
A
3
A
ICM (1)
Pulsed Collector Current
IF
Diode Continous Forward Current
I FM
Diode Maximum Forward Current
PD
Maximum Power Dissipation
(1)
@ TC = 100°C
@ TC = 25°C
Derating Factor
25
A
40
W
0.32
W/°C
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
250
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC (IGBT)
RθJA
Typ.
Max.
Units
Thermal Resistance, Junction-to-Case
Parameter
--
3.1
°C/W
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
--
100
°C/W
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2006 Fairchild Semiconductor Corporation
FGD3N60LSD Rev. B
1
www.fairchildsemi.com
FGD3N60LSD IGBT
September 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGD3N60LSD
FGD3N60LSDTM
D-PAK
380mm
16mm
2500
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
600
--
--
V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
± 100
nA
2.5
3.2
5.0
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 3mA, VCE = VGE
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 3A,
VGE = 10V
--
1.2
1.5
V
IC = 6A,
VGE = 10V
--
1.8
--
V
--
185
--
pF
--
20
--
pF
--
5.5
--
pF
--
40
--
ns
--
40
--
ns
--
600
--
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 25V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
--
600
--
ns
Eon
Turn-On Switching Loss
--
250
--
uJ
Eoff
Turn-Off Switching Loss
--
1.00
--
mJ
Ets
Total Switching Loss
--
1.25
--
mJ
td(on)
Turn-On Delay Time
--
40
--
ns
tr
Rise Time
--
45
--
ns
td(off)
Turn-Off Delay Time
--
620
--
ns
tf
Fall Time
--
800
--
ns
Eon
Turn-On Switching Loss
--
300
--
uJ
Eoff
Turn-Off Switching Loss
--
1.9
--
mJ
Ets
Total Switching Loss
--
2.2
--
mJ
Qg
Total Gate Charge
--
12.5
--
nC
Qge
Gate-Emitter Charge
--
2.8
--
nC
Qgc
Gate-Collector Charge
--
4.9
--
nC
Le
Internal Emitter Inductance
--
7.5
--
nH
FGD3N60LSD Rev. B
VCC = 480 V, IC = 3A,
RG = 470Ω, VGE = 10V,
Inductive Load, TC = 25°C
VCC = 480 V, IC = 3A,
RG = 470Ω, VGE = 10V,
Inductive Load, TC = 125°C
VCE = 480 V, IC = 3A,
VGE = 10V
Measured 5mm from PKG
2
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FGD3N60LSD IGBT
Package Marking and Ordering Information
C
Symbol
VFM
trr
Irr
Qrr
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Test Conditions
IF = 3A
IF = 3A,
di/dt = 100A/us
VR = 200V
Diode Reverse Recovery Charge
FGD3N60LSD Rev. B
3
Min.
Typ.
Max.
Units
V
TC = 25°C
--
1.5
1.9
TC = 100°C
--
1.55
--
TC = 25°C
--
234
--
TC = 100°C
--
--
--
TC = 25°C
--
2.64
--
TC = 100°C
--
--
--
TC = 25°C
--
309
--
TC = 100°C
--
--
--
ns
A
nC
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FGD3N60LSD IGBT
Electrical Characteristics of DIODE T
FGD3N60LSD IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
30
Figure 2. Typical Output Characteristics
30
Common Emitter
T C = 25 ° C
20V
Common Emitter
TC = 125°C
15V
Collector Current, IC [A]
Collector Current, IC [A]
24
10V
18
V GE = 8V
12
6
20V
24
15V
18
10V
VGE = 8V
12
6
0
0
2
4
6
8
0
0
Collector-Emitter Voltage, V CE [V]
Figure 3. Typical Output Characteristics
10
T C = 25 ° C
Collector Current, IC [A]
Collector Current, IC [A]
Common Emitter
V GE = 10V
T C = 125 ° C
6
4
2
8
Common Emitter
V CE = 20V
T C = 25 °C
T C = 125° C
6
4
2
0
0
0.1
1
10
1
Figure 5. Saturation Voltage vs. Case
3
Figure 6. Capacitance Characteristics
600
Comm on Emitter
V GE = 10V
Com m on Em itter
V GE = 0V, f = 1MHz
T C = 25 ° C
Capacitance [pF]
500
2
IC = 6A
IC = 3A
1
10
Gate-Emitter Voltage, V GE[V]
Collector-Emitter Voltage, V CE[V]
Collector-Emitter Voltage, VCE [V]
8
Figure 4. Transfer Characteristics
10
8
2
4
6
Collector-Emitter Voltage, VCE [V]
IC = 1.5A
400
Cies
300
Coes
200
Cres
100
0
0
0
30
60
90
120
150
1
Case Temperature, T C [° C]
FGD3N60LSD Rev. B
10
Collector - Emitter Voltage, V CE [V]
4
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(Continued)
Figure 7. Gate Charge
Figure 8. Turn-On Characteristics vs. Gate
Resistance
12
1000
Com m on Em itter
R L = 160 Ω
IC = 3 A
Switching Time [ns]
Gate - Emitter Voltage, VGE [V]
C o m m o n E m itte r
V CC = 4 8 0 V , V GE = 1 0 V
Vcc = 480V
T C = 25 ° C
10
FGD3N60LSD IGBT
Typical Performance Characteristics
8
6
4
T C = 25°C
T C = 125°C
T on
100
Tr
2
0
0
2
4
6
8
10
10
12
200
400
600
800 1000
G ate R esistance, R G [ Ω ]
Gate Charge, Q g [nC]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
10000
10000
Com m on Em itter
V CC = 480V, V GE = 10V
IC = 3A
Eoff
Switching Loss [µJ]
Switching Time [ns]
T C = 25 ° C
T C = 125 ° C
Toff
1000
Tf
1000
Eon
100
Com m on Em itter
V CC = 480V, V GE = 10V
IC = 3A
T C = 25 ° C
100
200
400
600
T C = 125 °C
10
800 1000
200
400
Gate Resistance, R G [ Ω ]
Gate Resistance, R G [Ω ]
Figure 11. Turn-On Characteristics vs.
Collector Current
600
800 1000
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
Vcc = 480V, V GE = 10V
RG = 470 Ω
100
1000
T C = 125 ° C
Toff
Switching Time [ns]
Switching Time [ns]
T C = 25° C
Ton
Tr
Tf
Common Emitter
Vcc = 480 V, VGE = 10V
RG = 470Ω
T C = 25 ° C
T C = 125° C
10
2
FGD3N60LSD Rev. B
3
Collector Current, IC [A]
100
4
2
5
3
Collector Current, IC [A]
4
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FGD3N60LSD IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Forward Characteristics
100
Tc = 25°C
Tc = 100°C
Common Emitter
Vcc = 480 V, VGE = 10V
RG = 470Ω
TC = 25°C
Forward Current, IF [A]
Switching Loss [µJ]
TC = 125°C
Eoff
1000
Eon
10
1
100
0.1
2
3
Collector Current, IC [A]
0
4
1
2
3
4
Forward Voltage Drop, VF [V]
Figure 15. Forward Voltage Drop Vs Tj
Figure 16. SOA Characteristics
100
2.8
2.4
Collector Current, Ic [A]
Forward Voltage Drop, VF [V]
Ic MAX (Pulsed)
IF=6 A
2.0
1.6
IF=3 A
50µs
10
1ms
1
DC Operation
Single Nonrepetitive
Pulse Tc = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
IF=1.5 A
1.2
100µs
Ic MAX (Continuous)
0.01
25
50
75
100
125
0.1
Junction Temperature, Tj [°C]
1
10
100
1000
Collector - Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
0 .5
1
0 .2
0 .1
0 .0 5
0 .1
0 .0 2
Pdm
s in g le p u ls e
t1
0 .0 1
t2
0 .0 1
1 E -5
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 E -4
1 E -3
0 .0 1
0 .1
1
10
R e c ta ngula r P uls e D ura tio n [s e c ]
FGD3N60LSD Rev. B
6
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FGD3N60LSD IGBT
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
FGD3N60LSD Rev. B
7
www.fairchildsemi.com
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
FGD3N60LSD Rev. B
8
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FGD3N60LSD IGBT
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