Download FGB7N6 0UNDF 6 00 7

FGB7N60UNDF
600 V, 7 A
Short Circuit Rated IGBT
Features
Applications
• Short Circuit Rated 10 us
• Sewing Machine, CNC, Home Appliances, Motor Control
• High Current Capability
General Description
• High Input Impedance
Using advanced NPT IGBT technology, Fairchild®’s the NPT
IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,
motor control and home appliances.
• Fast Switching
• RoHS Compliant
C
COLLECTOR
(FLANGE)
G C
E
G
TO-263AB/D2-PAK
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
600
V
VGES
Gate to Emitter Voltage
 20
V
14
A
7
A
@ TC =
25oC
21
A
Diode Forward Current
@ TC =
25oC
7
A
Maximum Power Dissipation
@ TC = 25oC
83
W
Maximum Power Dissipation
o
IC
ICM (1)
IF
PD
25oC
Collector Current
@ TC =
Collector Current
@ TC = 100oC
Pulsed Collector Current
@ TC = 100 C
33
W
TJ
Operating Junction Temperature
-55 to +150
oC
Tstg
Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
300
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case
1.5
oC/W
RJC(Diode)
Thermal Resistance, Junction to Case
3.5
o
40
oC/W
RJA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
C/W
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
©2011 Fairchild Semiconductor Corporation
1
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FGB7N60UNDF Rev. C0
FGB7N60UNDF 600 V, 7 A Short Circuit Rated
April 2013
Device Marking
Device
Package
FGB7N60UNDF
FGB7N60UNDF
TO-263AB/D2-PAK
Electrical Characteristics of the IGBT
Symbol
Parameter
Rel Size
Tape Width
Quantity
-
50
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±10
uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
5.5
6.8
8.5
V
IC = 7A, VGE = 15V
IC = 7mA, VCE = VGE
-
1.9
2.3
V
IC = 7A, VGE = 15V,
TC = 125oC
-
2.1
-
V
-
275
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
41
pF
-
10
pF
5.9
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
-
tr
Rise Time
-
4.2
ns
td(off)
Turn-Off Delay Time
-
32.3
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
104
uJ
Ets
Total Switching Loss
-
203
uJ
td(on)
Turn-On Delay Time
-
6
ns
tr
Rise Time
-
4.3
ns
td(off)
Turn-Off Delay Time
-
33.8
ns
tf
Fall Time
-
113
ns
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
Tsc
Short Circuit Withstand Time
©2011 Fairchild Semiconductor Corporation
VCC = 400V, IC = 7A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 7A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125oC
VCC = 350V,
RG = 10, VGE = 15V,
TC = 150oC
2
-
68
-
99
89
ns
uJ
-
181
uJ
-
144
uJ
-
325
uJ
10
us
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FGB7N60UNDF Rev. C0
FGB7N60UNDF 600 V, 7 A Short Circuit Rated
Package Marking and Ordering Information
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 7A,
VGE = 15V
Electrical Characteristics of the Diode
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
TC = 25°C unless otherwise noted
Test Conditions
IF = 7A
Diode Reverse Recovery Charge
©2011 Fairchild Semiconductor Corporation
18
-
nC
3
-
nC
-
13
-
nC
TC = 25°C unless otherwise noted
IF =7A, dIF/dt = 200A/s
Qrr
-
Min.
Typ.
Max
TC = 25oC
-
1.7
2.2
TC = 125oC
-
1.6
TC = 25oC
-
32.3
-
70
TC = 25oC
-
59
o
-
172
TC =
125oC
TC = 125 C
3
Unit
V
ns
nC
-
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FGB7N60UNDF Rev. C0
FGB7N60UNDF 600 V, 7 A Short Circuit Rated
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
30
o
TC = 25 C
20V
15V
VGE = 12V
10
1.5
3.0
4.5
6.0
7.5
Collector-Emitter Voltage, VCE [V]
VGE = 12V
20
10
0
0.0
9.0
Figure 3. Typical Saturation Voltage
Characteristics
1.5
3.0
4.5
6.0
7.5
Collector-Emitter Voltage, VCE [V]
9.0
Figure 4. Transfer Characteristics
30
30
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
25
o
TC = 25 C
o
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
17V
20V
15V
20
0
0.0
o
TC = 125 C
17V
Collector Current, IC [A]
30
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
o
TC = 125 C
20
15
10
o
TC = 125 C
20
10
5
0
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
0
6
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
20
Common Emitter
VGE = 15V
14A
2.5
7A
2.0
1.5
1.0
25
IC = 3.5A
4
Common Emitter
o
TC = 25 C
16
12
8
7A
4
14A
IC = 3.5A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
©2011 Fairchild Semiconductor Corporation
15
Figure 6. Saturation Voltage vs. VGE
3.5
3.0
3
6
9
12
Gate-Emitter Voltage,VGE [V]
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGB7N60UNDF Rev. C0
FGB7N60UNDF 600 V, 7 A Short Circuit Rated
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
1000
20
Common Emitter
o
TC = 25 C
Cies
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
Figure 8. Capacitance Characteristics
12
8
Coes
100
7A
Common Emitter
VGE = 0V, f = 1MHz
14A
4
IC = 3.5A
0
4
o
TC = 25 C
8
12
16
Gate-Emitter Voltage, VGE [V]
10
20
1
Figure 9. Gate charge Characteristics
30
30
200V
10
12
Collector Current, Ic [A]
400V
VCC = 100V
9
6
3
10s
100s
1
1ms
10 ms
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
Common Emitter
o
TC = 25 C
0.01
0
0
5
10
15
Gate Charge, Qg [nC]
1
20
Figure 11. Turn-on Characteristics vs.
Gate Resistance
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
300
10
Switching Time [ns]
100
Switching Time [ns]
10
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
15
Gate-Emitter Voltage, VGE [V]
Cres
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 7A
tr
1
tf
100
td(off)
Common Emitter
VCC = 400V, VGE = 15V
IC = 7A
o
TC = 25 C
o
TC = 25 C
o
TC = 125 C
o
TC = 125 C
10
0.1
0
10
20
30
40
Gate Resistance, RG []
©2011 Fairchild Semiconductor Corporation
50
0
60
10
20
30
40
50
60
Gate Resistance, RG []
5
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FGB7N60UNDF Rev. C0
FGB7N60UNDF 600 V, 7 A Short Circuit Rated
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
500
30
Common Emitter
VGE = 15V, RG = 10
o
TC = 25 C
10
o
tr
1
TC = 125 C
Switching Time [ns]
Switching Time [ns]
td(on)
Common Emitter
VGE = 15V, RG = 10
100
tf
td(off)
o
TC = 25 C
o
TC = 125 C
10
0.1
0
2
4
6
8
10
12
0
14
2
4
6
8
10
12
14
16
18
20
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs
Collector Current
1000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 7A
Eon
Switching Loss [uJ]
Switching Loss [uJ]
o
TC = 25 C
o
TC = 125 C
Eon
Eoff
100
Eoff
100
Common Emitter
VGE = 15V, RG = 10
o
TC = 25 C
o
TC = 125 C
10
50
0
10
20
30
40
Gate Resistance, RG []
50
0
60
Figure 17. Turn off Switching
SOA Characteristics
10
15
20
Figure 18. Forward Characteristics
30
Forward Current, IF [A]
30
Collector Current, IC [A]
5
Collector Current, IC [A]
10
10
o
o
TJ = 75 C
TJ = 125 C
o
TJ = 25 C
1
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
100
0.2
1000
0
Collector-Emitter Voltage, VCE [V]
©2011 Fairchild Semiconductor Corporation
6
1
2
Forward Voltage, VF [V]
3
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FGB7N60UNDF Rev. C0
FGB7N60UNDF 600 V, 7 A Short Circuit Rated
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
100
0.20
o
Reverse Current , IR [A]
10
Stored Recovery charge, Qrr [ns]
TC = 25 C
o
TJ = 125 C
1
o
TJ = 75 C
0.1
0.01
o
TJ = 25 C
1E-3
1E-4
50
200
400
Reverse Voltage, VR [V]
200A/s
o
TC = 125 C
0.15
di/dt = 100A/s
0.10
200A/s
0.05
di/dt = 100A/s
0.00
600
0
2
4
6
8
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
Reverse Recovery Time, trr [nC]
100
di/dt = 100A/s
200A/s
50
di/dt = 100A/s
200A/s
o
TC = 25 C
o
TC = 125 C
0
0
2
4
6
8
10
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
0.00001
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
7
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FGB7N60UNDF Rev. C0
FGB7N60UNDF 600 V, 7 A Short Circuit Rated
Typical Performance Characteristics
FGB7N60UNDF 600 V, 7 A Short Circuit Rated
Mechanical Dimensions
TO-263AB/D2_PAK
©2011 Fairchild Semiconductor Corporation
8
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FGB7N60UNDF Rev. C0
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2011 Fairchild Semiconductor Corporation
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FGB7N60UNDF Rev. C0
FGB7N60UNDF 600 V, 7 A Short Circuit Rated
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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