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FGAF20N60SMD
600 V, 20 A Field Stop IGBT
Features
General Description
• Maximum Junction Temperature : TJ =
175oC
Using novel field stop IGBT technology, Fairchild®’s new series
of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications
where low conduction and switching losses are essential.
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 20 A
• High Input Impedance
• Fast Swiching: EOFF = 7 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Sewing Machine, CNC
• Home Appliances, Motor-Control
C
G
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
600
V
VGES
Gate to Emitter Voltage
± 20
V
IC
ICM (1)
IF
IFM (1)
PD
25oC
Collector Current
@ TC =
40
A
Collector Current
@ TC = 100oC
20
A
60
A
Diode Forward Current
@ TC = 25oC
20
A
Diode Forward Current
@ TC = 100oC
10
A
60
A
75
W
Pulsed Collector Current
Pulsed Diode Maximum Forward Current
25oC
Maximum Power Dissipation
@ TC =
Maximum Power Dissipation
@ TC = 100oC
37.5
W
TJ
Operating Junction Temperature
-55 to +175
o
Tstg
Storage Temperature Range
-55 to +175
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
C
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2012 Fairchild Semiconductor Corporation
1
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FGAF20N60SMD Rev. C2
FGAF20N60SMD 600 V 20 A Field Stop IGBT
April 2013
Symbol
RθJC(IGBT)
Parameter
Typ.
Max.
-
2.0
o
C/W
C/W
Thermal Resistance, Junction to Case
Unit
RθJC(Diode)
Thermal Resistance, Junction to Case
-
4.0
o
RθJA
Thermal Resistance, Junction to Ambient
-
40
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGAF20N60SMD
FGAF20N60SMD
TO3-PF
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0V, IC = 250µA
600
-
-
V
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
-
0.62
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
µA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250µA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
3.5
4.7
6.0
V
IC = 20A, VGE = 15V
-
1.7
-
V
IC = 20A, VGE = 15V,
TC = 175oC
-
1.9
-
V
-
925
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
89
-
pF
-
30
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
-
12
-
ns
tr
Rise Time
-
22
-
ns
td(off)
Turn-Off Delay Time
-
91
-
ns
tf
Fall Time
-
21
27
ns
Eon
Turn-On Switching Loss
-
452
-
uJ
Eoff
Turn-Off Switching Loss
-
141
187
uJ
Ets
Total Switching Loss
-
593
-
uJ
td(on)
Turn-On Delay Time
-
12
-
ns
tr
Rise Time
-
19
-
ns
td(off)
Turn-Off Delay Time
-
93
-
ns
tf
Fall Time
-
16
-
ns
Eon
Turn-On Switching Loss
-
667
-
uJ
Eoff
Turn-Off Switching Loss
-
317
-
uJ
Ets
Total Switching Loss
-
984
-
uJ
©2012 Fairchild Semiconductor Corporation
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 175oC
2
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FGAF20N60SMD Rev. C2
FGAF20N60SMD 600 V 20 A Field Stop IGBT
Thermal Characteristics
Symbol
Qg
Parameter
(Continued)
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 20A,
VGE = 15V
Electrical Characteristics of the Diode
Symbol
Parameter
Min.
Typ.
Max
Unit
-
64
-
nC
-
6.2
-
nC
-
32
-
nC
Min.
Typ.
Max
Unit
TC = 25°C unless otherwise noted
Test Conditions
-
2.3
-
TC = 175oC
-
1.67
-
Reverse Recovery Energy
TC = 175oC
-
13.8
-
trr
Diode Reverse Recovery Time
TC = 25oC
-
26.7
-
TC = 175oC
-
88.2
-
Qrr
Diode Reverse Recovery Charge
TC = 25oC
-
42
-
-
245
-
VFM
Diode Forward Voltage
Erec
©2012 Fairchild Semiconductor Corporation
TC =
25oC
IF = 10A
IF =10A, dIF/dt = 200A/µs
TC =
3
175oC
V
uJ
ns
nC
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FGAF20N60SMD Rev. C2
FGAF20N60SMD 600 V 20 A Field Stop IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
65
20V
o
TC = 25 C
60
65
60
12V
10V
15V
50
40
30
20
VGE = 8V
10
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
Collector Current, IC [A]
VGE = 8V
20
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, VCE [V]
6.0
Common Emitter
VCE = 20V
50
o
o
TC = 175 C
30
20
o
TC = 25 C
o
TC = 175 C
40
30
20
10
10
0
0.0
0
1.0
2.0
3.0
Collector-Emitter Voltage, VCE [V]
0
4.0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2
4
6
8
10
Gate-Emitter Voltage,VGE [V]
20
Common Emitter
VGE = 15V
2.5
40A
2.0
20A
1.5
IC = 10A
4
Common Emitter
o
TC = -40 C
15
10
20A
IC = 10A
40A
5
0
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
©2012 Fairchild Semiconductor Corporation
12
Figure 6. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
30
60
Common Emitter
VGE = 15V
TC = 25 C
1.0
25
40
Figure 4. Transfer Characteristics
60
3.0
10V
50
0
0.0
6.0
Figure 3. Typical Saturation Voltage
Characteristics
40
12V
10
0
0.0
50
20V
o
TC = 175 C
15V
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGAF20N60SMD Rev. C2
FGAF20N60SMD 600 V 20 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
15
10
20A
5
0
40A
IC = 10A
TC = 175 C
16
12
8
IC = 20A
40A
10A
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
4
20
Figure 9. Capacitance Characteristics
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
2000
Common Emitter
Cies
o
Gate-Emitter Voltage, VGE [V]
Capacitance [pF]
1000
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
o
TC = 25 C
TC = 25 C
12
400V
300V
9
6
3
Cres
0
20
5
10
15
20
25
Collector-Emitter Voltage, VCE [V]
VCC = 200V
0
30
Figure 11. SOA Characteristics
20
40
60
Gate Charge, Qg [nC]
80
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
100
100µs
10
tr
1ms
10ms
Switching Time [ns]
Collector Current, Ic [A]
10µs
DC
1
*Notes:
0.1
o
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
1. TC = 25 C
o
TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
©2012 Fairchild Semiconductor Corporation
o
TC = 175 C
1
1000
5
0
10
20
30
Gate Resistance, RG [Ω]
40
50
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FGAF20N60SMD Rev. C2
FGAF20N60SMD 600 V 20 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
100
1000
tr
Switching Time [ns]
Switching Time [ns]
td(off)
100
tf
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
10
td(on)
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
o
TC = 25 C
o
TC = 175 C
o
TC = 175 C
1
0
10
20
30
40
Gate Resistance, RG [Ω]
1
10
50
20
30
40
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
1000
1000
Eon
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
Eoff
TC = 175 C
Switching Loss [uJ]
Switching Time [ns]
o
100
td(off)
tf
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
o
TC = 25 C
o
TC = 175 C
10
10
20
30
Collector Current, IC [A]
10
40
Figure 17. Switching Loss vs.
Collector Current
0
10
20
30
40
Gate Resistance, RG [Ω]
50
Figure 18. Turn off Switching
SOA Characteristics
10000
100
Eon
Collector Current, IC [A]
Switching Loss [uJ]
1000
100
Eoff
Common Emitter
VGE = 15V, RG = 10Ω
10
o
TC = 25 C
10
Safe Operating Area
o
o
TC = 175 C
1
10
20
30
Collector Current, IC [A]
©2012 Fairchild Semiconductor Corporation
VGE = 15V, TC = 175 C
1
40
1
6
10
100
Collector-Emitter Voltage, VCE [V]
1000
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FGAF20N60SMD Rev. C2
FGAF20N60SMD 600 V 20 A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Power Dissipation
80
35
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
70
PD, Power Dissipation [w]
ID, Drain Current [A]
30
25
20
15
10
5
60
50
40
30
20
10
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
0
25
175
Figure 21. Load Current Vs. Frequency
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 22. Forward Characteristics
100
250
VCC = 400V
Forward Current, IF [A]
Collector Current, IC [A]
load Current : peak of square wave
200
o
TC = 75 C
150
o
TC = 100 C
100
50
Duty cycle : 50%
10
o
TC = 25 C
o
T = 100 C
o
C
0
1k
TC = 175 C
Powe Dissipation = 31.3 W
10k
100k
1
0
0.5
1M
Switching Frequency, f [Hz]
Figure 23. Reverse Current
4
Figure 24. Stored Charge
75
Stored Recovery Charge, Qrr [nC]
1000
o
100
Reverse Current , IR [µ A]
1
2
3
Forward Voltage, VF [V]
TJ = 175 C
10
1
o
TJ = 100 C
0.1
o
di/dt = 200A/µs
50
25
di/dt = 100A/µs
TJ = 25 C
0.01
50
0
200
400
Reverse Voltage, VR [V]
©2012 Fairchild Semiconductor Corporation
600
5
10
15
20
Forward Current, IF [A]
7
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FGAF20N60SMD Rev. C2
FGAF20N60SMD 600 V 20 A Field Stop IGBT
Typical Performance Characteristics
FGAF20N60SMD 600 V 20 A Field Stop IGBT
Typical Performance Characteristics
Figure 25. Reverse Recovery Time
Reverse Recovery Time, trr [ns]
40
35
di/dt = 100A/µs
30
di/dt = 200A/µs
25
20
5
10
15
20
Forward Current, IF [A]
Figure 26.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
3
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
Figure 27.Transient Thermal Impedance of Diode
Thermal Response [Zthjc]
5
0.5
1
0.2
0.1
0.05
0.1
0.02
PDM
0.01
t1
single pulse
0.01
1E-5
1E-4
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
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FGAF20N60SMD Rev. C2
FGAF20N60SMD 600 V 20 A Field Stop IGBT
Mechanical Dimensions
TO-3PF
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
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FGAF20N60SMD Rev. C2
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2012 Fairchild Semiconductor Corporation
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FGAF20N60SMD Rev. C2
FGAF20N60SMD 600 V 20 A Field Stop IGBT
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