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FGA25S125P
1250 V, 25 A Shorted-anode IGBT
Features
General Description
• High Speed Switching
Using advanced field stop trench and shorted-anode technology, Fairchild®’s shorted-anode trench IGBTs offer superior
conduction and switching performances for soft switching applications. The device can operate in parallel configuration with
exceptional avalanche capability . This device is designed for
induction heating and microwave oven.
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
C
G
TO-3PN
E
G CE
Absolute Maximum Ratings
Symbol
Description
Rating
Unit
VCES
Collector to Emitter Voltage
1250
V
VGES
Gate to Emitter Voltage
± 25
V
IC
ICM (1)
IF
PD
o
Collector Current
@ TC = 25 C
50
A
Collector Current
@ TC = 100oC
25
A
75
A
Diode Continuous Forward Current
@ TC = 25oC
50
A
Diode Continuous Forward Current
@ TC = 100oC
25
A
Maximum Power Dissipation
@ TC = 25oC
250
W
Maximum Power Dissipation
@ TC = 100oC
Pulsed Collector Current
125
Operating Junction Temperature
TJ
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
W
-55 to +175
o
-55 to +175
oC
C
o
300
C
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Typ.
Max.
-
0.6
o
40
oC/W
-
Unit
C/W
Notes:
1: Limited by Tjmax
©2012 Fairchild Semiconductor Corporation
1
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FGA25S125P Rev. C2
FGA25S125P 1250 V, 25 A Shorted-anode IGBT
April 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA25S125P
FGA25S125P
TO-3PN
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
ICES
Collector Cut-Off Current
VCE = 1250V, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±500
nA
IC = 25mA, VCE = VGE
4.5
6.0
7.5
V
IC = 25A, VGE = 15V
TC = 25oC
-
1.8
2.35
V
IC = 25A, VGE = 15V
TC = 125oC
-
2.05
-
V
IC = 25A, VGE = 15V,
TC = 175oC
-
2.16
-
V
IF = 25A, TC = 25oC
-
1.7
2.4
V
IF = 25A, TC = 175oC
-
2.1
-
V
-
2150
-
pF
-
48
-
pF
-
36
-
pF
On Characteristics
VGE(th)
VCE(sat)
VFM
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Diode Forward Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
24
-
ns
tr
Rise Time
-
250
-
ns
td(off)
Turn-Off Delay Time
-
502
-
ns
tf
Fall Time
-
138
-
ns
Eon
Turn-On Switching Loss
-
1085
-
uJ
Eoff
Turn-Off Switching Loss
-
580
-
uJ
VCC = 600V, IC = 25A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25oC
Ets
Total Switching Loss
-
1665
-
uJ
td(on)
Turn-On Delay Time
-
21.2
-
ns
tr
Rise Time
-
304
-
ns
td(off)
Turn-Off Delay Time
-
490
-
ns
tf
Fall Time
-
232
-
ns
Eon
Turn-On Switching Loss
-
1310
-
uJ
Eoff
Turn-Off Switching Loss
-
952
-
uJ
Ets
Total Switching Loss
-
2262
-
uJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2012 Fairchild Semiconductor Corporation
VCC = 600V, IC = 25A,
RG = 10Ω, VGE = 15V,
Resistive Load,, TC = 175oC
VCE = 600V, IC = 25A,
VGE = 15V
2
-
204
-
nC
-
15
-
nC
-
103
-
nC
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FGA25S125P Rev. C2
FGA25S125P 1250 V, 25 A Shorted-anode IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
200
o
TC = 25 C
Figure 2. Typical Output Characteristics
200
20V
VGE=17V
Collector Current, IC [A]
Collector Current, Ic [A]
160
20V
o
TC = 175 C
15V
12V
120
80
10V
9V
40
17V
160
15V
120
12V
80
10V
VGE = 7V
40
9V
8V
8V
7V
0
0.0
2.0
4.0
6.0
8.0
Collector-Emitter Voltage, VCE [V]
0
0.0
10.0
Figure 3. Typical Saturation Voltage
Characteristics
100
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
160
o
Collector Current, IC [A]
Collector Current, IC [A]
10.0
Figure 4. Transfer Characteristics
200
TC = 25 C
o
TC = 175 C ---
120
80
o
80
TC = 25 C
o
TC = 175 C
60
40
20
40
0
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, VCE [V]
0
6.0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
VGE = 15V
3.0
50A
2.5
2.0
25A
1.5
1.0
25
IC = 12.5A
15
3
Common Emitter
o
TC = 25 C
15
10
25A
IC = 12.5A
5
0
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
©2012 Fairchild Semiconductor Corporation
3
6
9
12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
3.5
Collector-Emitter Voltage, VCE [V]
2.0
4.0
6.0
8.0
Collector-Emitter Voltage, VCE [V]
4
50A
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGA25S125P Rev. C2
FGA25S125P 1250 V, 25 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
5000
20
Common Emitter
Cies
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
TC = 175 C
12
IC = 25A
8
50A
12.5A
1000
100
Coes
Common Emitter
VGE = 0V, f = 1MHz
4
Cres
o
TC = 25 C
10
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
1
20
Figure 9. Gate charge Characteristics
5
10
15
20
25
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
100
15
Common Emitter
10µs
VCC = 200V
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
TC = 25 C
12
600V
400V
9
6
3
100µs
10
1ms
10ms
DC
1
*Notes:
0.1
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0.01
0
0
30
60
90
120 150
Gate Charge, Qg [nC]
180
1
210
Figure 11. Turn-on Characteristics vs.
Gate Resistance
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
10000
Switching Time [ns]
Switching Time [ns]
td(off)
100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
td(off)
1000
tf
100
o
o
TC = 25 C
TC = 25 C
o
o
10
10
TC = 175 C
TC = 175 C
20
30
40
50
Gate Resistance, RG [Ω]
©2012 Fairchild Semiconductor Corporation
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
60
10
10
70
4
20
30
40
50
Gate Resistance, RG [Ω]
60
70
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FGA25S125P Rev. C2
FGA25S125P 1250 V, 25 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
1000
td(off)
Switching Time [ns]
Switching Time [ns]
tr
100
td(on)
10
Common Emitter
VGE = 15V, RG = 10Ω
tf
Common Emitter
VGE = 15V, RG = 10Ω
100
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
1
10
20
30
TC = 175 C
40
40
10
50
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
10000
Switching Loss [uJ]
Eon
Switching Loss [uJ]
50
Figure 16. Switching Loss vs.
Collector Current
5000
1000
Eoff
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
Eon
1000
Eoff
TC = 25 C
o
o
TC = 175 C
TC = 175 C
100
10
20
30
40
50
Gate Resistance, RG [Ω]
Common Emitter
VGE = 15V, RG = 10Ω
o
o
TC = 25 C
60
100
10
70
Figure 17. Turn off Switching
SOA Characteristics
20
30
40
Collector Current, IC [A]
50
Figure 18. Forward Characteristics
100
Forward Current, IF [A]
100
Collector Current, IC [A]
20
30
40
Collector Current, IC [A]
10
10
1
o
TC = 25 C
Safe Operating Area
o
o
VGE = 15V, TC = 175 C
TC = 175 C
1
0.1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
©2012 Fairchild Semiconductor Corporation
0
5
1
2
3
Forward Voltage, VF [V]
4
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FGA25S125P Rev. C2
FGA25S125P 1250 V, 25 A Shorted-anode IGBT
Typical Performance Characteristics
FGA25S125P 1250 V, 25 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 19. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
0.7
0.5
0.2
0.1
PDM
0.1
0.06
1E-5
0.05
0.02
0.01
single pulse
1E-4
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
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FGA25S125P Rev. C2
FGA25S125P 1250 V, 25 A Shorted-anode IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
7
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FGA25S125P Rev. C2
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2012 Fairchild Semiconductor Corporation
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FGA25S125P Rev. C2
FGA25S125P 1250 V, 25 A Shorted-anode IGBT
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