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FGA50N100BNTD2
1000 V NPT Trench IGBT
Features
General Description
•
•
•
•
•
Using Fairchild®'s proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder
applications.
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
High Input Impedance
Built-in Fast Recovery Diode
RoHS Compliant
Applications
• UPS, Welder
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
ICM (1)
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
TJ
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 100oC
@ TC = 25oC
@ TC =
100oC
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Unit
1000
V
± 25
V
50
A
35
A
200
A
15
A
150
A
156
W
63
Operating Junction Temperature
Tstg
Ratings
W
-55 to +150
o
-55 to +150
o
C
C
oC
300
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.8
o
RθJC(DIODE)
Thermal Resistance, Junction to Case
-
1.2
o
RθJA
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
-
1
40.0
C/W
C/W
oC/W
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FGA50N100BNTD2 Rev. C0
FGA50N100BNTD2 1000 V NPT Trench IGBT
April 2013
Device Marking
Device
Package
Packaging
Type
FGA50N100BNTD2
FGA50N100BNTD2
TO-3PN
Rail / Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
1000
-
-
V
ICES
Collector Cut-Off Current
VCE = 1000V, VGE = 0V
-
-
1.0
mA
IGES
G-E Leakage Current
VGE = ±25V, VCE = 0V
-
-
±500
nA
IC = 60mA, VCE = VGE
4.0
5.5
7.0
V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 10A, VGE = 15V
-
IC = 60A, VGE = 15V
1.5
1.8
V
2.5
2.9
V
-
V
IC = 60A, VGE = 15V,
TC = 125oC
-
3.3
-
6000
-
pF
VCE = 10V, VGE = 0V,
f = 1MHz
-
260
-
pF
-
200
-
pF
-
34
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
VCC = 600V, IC = 60A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
-
65
100
ns
Qg
Total Gate Charge
-
257
350
nC
Qge
Gate to Emitter Charge
-
45
-
nC
Qgc
Gate to Collector Charge
-
95
-
nC
IF = 15A
-
2.9
3.2
V
IF = 60A
-
4.0
4.7
V
VCE = 600V, IC = 60A,
VGE = 15V, TC = 25oC
Electrical Characteristics of the Diode
-
68
-
ns
-
243
-
ns
TC = 25°C unless otherwise noted
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
IF = 60A, di/dt = 100A/us
-
60
75
ns
IR
Instantaneous Reverse Current
VRRM = 1000V
-
-
2
µA
©2009 Fairchild Semiconductor Corporation
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FGA50N100BNTD2 Rev. C0
FGA50N100BNTD2 1000 V NPT Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
200
200
o
o
20V
TC = 25 C
15V
TC = 125 C
20V
10V
15V
10V
160
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
9V
120
80
8V
40
160
9V
120
8V
80
7V
40
7V
VGE = 6V
VGE = 6V
0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
0
10
0
Figure 3. Typical Saturation Voltage
Characteristics
200
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
160
Collector Current, IC [A]
Collector Current, IC [A]
10
Figure 4. Transfer Characteristics
200
TC = 25 C
o
TC = 125 C
120
80
o
160 TC = 25 C
o
TC = 125 C
120
80
40
40
0
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
2
7
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
4.5
Collector-Emitter Voltage, VCE [V]
2
4
6
8
Collector-Emitter Voltage, VCE [V]
90A
60A
3.0
30A
IC = 10A
1.5
Common Emitter
o
TC = -40 C
16
12
60A
8
30A
4
90A
IC = 10A
1.0
25
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
©2009 Fairchild Semiconductor Corporation
3
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGA50N100BNTD2 Rev. C0
FGA50N100BNTD2 1000 V NPT Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
60A
8
30A
90A
4
IC = 10A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
TC = 125 C
16
12
60A
8
IC = 10A
0
20
0
Figure 9. Capacitance Characteristics
90A
30A
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
8000
Common Emitter
Capacitance [pF]
6000
Gate-Emitter Voltage, VGE [V]
o
Cies
Common Emitter
VGE = 0V, f = 1MHz
o
4000
TC = 25 C
2000
Coes
TC = 25 C
12
VCC = 200V
9
400V
600V
6
3
Cres
0
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
55
110
165
220
Gate Charge, Qg [nC]
275
Figure 12. Load Current vs. Frequency
500
Collector Current, Ic [A]
100
10µs
10
100µs
1ms
1
10 ms
DC
*Notes:
0.1
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
1000 3000
Collector-Emitter Voltage, VCE [V]
©2009 Fairchild Semiconductor Corporation
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FGA50N100BNTD2 Rev. C0
FGA50N100BNTD2 1000 V NPT Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
Figure 14. Turn-off Characteristics vs.
Gate Resistance
300
2000
1000
100
Switching Time [ns]
Switching Time [ns]
td(off)
tr
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
o
TC = 25 C
o
TC = 25 C
o
TC = 125 C
10
10
o
20
30
40
Gate Resistance, RG [Ω]
TC = 125 C
10
10
50
20
30
40
50
Gate Resistance, RG [Ω]
Figure 15. Turn-on Characteristics vs.
Collector Current
Figure 16. Turn-off Characteristics vs.
Collector Current
200
1000
100
td(off)
Switching Time [ns]
Switching Time [ns]
tr
td(on)
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VGE = 15V, RG = 10Ω
100
o
TC = 25 C
tf
o
TC = 125 C
o
TC = 25 C
o
TC = 125 C
10
10
20
30
40
50
60
70
80
90
10
10
100
20
30
Collector Current, IC [A]
40
50
60
70
80
90
100
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
Fig 18. Switching Loss vs. Collector Current
30
50
Common Emitter
VCC = 600V, VGE = 15V
10
Switching Loss [mJ]
IC = 60A
Switching Loss [mJ]
o
TC = 25 C
o
10
TC = 125 C
Eon
Eoff
Eon
Eoff
1
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
o
TC = 25 C
o
TC = 125 C
1
10
20
30
40
Gate Resistance, RG [Ω]
©2009 Fairchild Semiconductor Corporation
0.1
10
50
20
30
40
50
60
70
80
90
100
Collector Current, IC [A]
5
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FGA50N100BNTD2 Rev. C0
FGA50N100BNTD2 1000 V NPT Trench IGBT
Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characterisics
Figure 20. Forward Characteristics
200
250
100
100
Forward Current, IF [A]
Collector Current, IC [A]
o
10
TJ = 125 C
10
o
TJ = 25 C
1
o
Safe Operating Area
TC = 25 C
o
VGE = 15V, TC = 125 C
o
TC = 125 C
1
1
10
0.1
1000 3000
100
0
1
Collector-Emitter Voltage, VCE [V]
Figure 21. Reverse Current
80
300
Reverse Recovery Time, Trr[ns]
o
TJ = 125 C
10
1
0.1
0.01
o
TJ = 25 C
200
6
10
400
600
800
Reverse Voltage, VR [V]
Trr
Irr
6
40
4
20
2
IF = 60A
o
0
20
1000
8
60
TC = 25 C
40
60
Reverse Recovery Current, Irr[A]
Reverse Current , IR [µ A]
5
Figure 22. Reverse Recovery Characteristics vs.
di/dt
100
1E-3
50
2
3
4
Forward Voltage, VF [V]
0
80 100 120 140 160 180 200
di/dt[A/µs]
Figure 23. Reverse Recovery Characteristics vs.
Forward Current
6
Trr
Irr
70
4
di/dt = 100A/µs
o
TC = 25 C
60
10
20
30
40
50
Forward Current,IF[A]
©2009 Fairchild Semiconductor Corporation
Reverse Recovery Current, Irr[A]
Reverse Recovery Time, Trr [ns]
80
2
60
6
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FGA50N100BNTD2 Rev. C0
FGA50N100BNTD2 1000 V NPT Trench IGBT
Typical Performance Characteristics
FGA50N100BNTD2 1000 V NPT Trench IGBT
Typical Performance Characteristics
Figure 24.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2009 Fairchild Semiconductor Corporation
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FGA50N100BNTD2 Rev. C0
FGA50N100BNTD2 1000 V NPT Trench IGBT
Mechanical Dimensions
TO-3PN
©2009 Fairchild Semiconductor Corporation
8
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FGA50N100BNTD2 Rev. C0
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2009 Fairchild Semiconductor Corporation
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FGA50N100BNTD2 Rev. C0
FGA50N100BNTD2 1000 V NPT Trench IGBT
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