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FGA20S140P
1400 V, 20 A Shorted-anode IGBT
Features
General Description
• High Speed Switching
Using advanced field stop trench and shorted-anode technology, Fairchild®’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
• Low Saturation Voltage: VCE(sat) =1.9 V @ IC = 20 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
C
G
TO-3PN
E
G C E
Absolute Maximum Ratings T
Symbol
= 25°C unless otherwise noted
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
C
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
ICM (1)
Pulsed Collector Current
IF
Diode Continuous Forward Current
IF
Diode Continuous Forward Current
PD
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Unit
1400
V
±25
V
40
A
20
A
60
A
@ TC = 25oC
40
A
@ TC = 100oC
20
A
272
W
o
@ TC = 25 C
@ TC =
100oC
136
Operating Junction Temperature
Tstg
Ratings
W
-55 to +175
o
-55 to +175
o
C
C
oC
300
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
--
0.55
o
40
o
--
Unit
C/W
C/W
Notes:
1: Limited by Tjmax
©2012 Fairchild Semiconductor Corporation
1
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www.BDTIC.com/FAIRCHILD
FGA20S140P Rev. C3
FGA20S140P 1400 V, 20 A Shorted-anode IGBT
April 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA20S140P
FGA20S140P
TO-3PN
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
ICES
Collector Cut-Off Current
VCE = 1400, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±500
nA
IC = 20mA, VCE = VGE
4.5
6.0
7.5
V
IC = 20A, VGE = 15V
TC = 25oC
-
1.9
2.4
V
IC = 20A, VGE = 15V,
TC = 125oC
-
2.1
-
V
IC = 20A, VGE = 15V,
TC = 175oC
-
2.2
-
V
IF = 20A, TC = 25oC
-
1.7
2.4
V
o
IF = 20A, TC = 175 C
-
2.1
-
V
-
1686
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
45
-
pF
-
32
-
pF
On Characteristics
VGE(th)
VCE(sat)
VFM
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Diode Forward Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characcteristics
td(on)
Turn-On Delay Time
-
20
ns
tr
Rise Time
-
245
-
ns
td(off)
Turn-Off Delay Time
-
400
-
ns
tf
Fall Time
-
130
-
ns
Eon
Turn-On Switching Loss
-
0.76
-
mJ
Eoff
Turn-Off Switching Loss
-
0.56
-
mJ
Ets
Total Switching Loss
-
1.32
-
mJ
td(on)
Turn-On Delay Time
-
21
-
ns
tr
Rise Time
-
301
-
ns
td(off)
Turn-Off Delay Time
-
420
-
ns
tf
Fall Time
-
356
-
ns
Eon
Turn-On Switching Loss
-
0.95
-
mJ
Eoff
Turn-Off Switching Loss
-
1.39
-
mJ
Ets
Total Switching Loss
-
2.34
-
mJ
Qg
Total Gate Charge
-
203.5
-
nC
-
10.8
-
nC
-
84.6
-
nC
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2012 Fairchild Semiconductor Corporation
VCC = 600V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 175oC
VCE = 600V, IC = 20A,
VGE = 15V
2
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FGA20S140P Rev. C3
FGA20S140P 1400 V, 20 A Shorted-anode IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
160
160
20V
o
TC = 25 C
Collector Current, IC [A]
12V
100
80
60
10V
40
9V
20
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, VCE [V]
10V
40
9V
8V
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-Emitter Voltage, VCE [V]
8.0
Figure 4. Transfer Characteristics
100
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
Collector Current, IC [A]
Collector Current, IC [A]
60
0
0.0
TC = 25 C
o
80
12V
80
7.5
120
100
100
20
Figure 3. Typical Saturation Voltage
Characteritics
17V
15V
120
8V
0
0.0
VGE = 20V
140
VGE = 17V
120
o
TC = 175 C
15V
140
Collector Current, IC [A]
Figure 2. Typical Saturation Voltage
Characteristics
TC = 175 C
60
40
o
80 TC = 25 C
o
TC = 175 C
60
40
20
20
0
0.0
0
1.0
2.0
3.0
4.0
Collector-Emitter Voltage, VCE [V]
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Gate-Emitter Voltage,VGE [V]
5.0
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. Vge
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
3.5
40A
3.0
2.5
20A
2.0
IC = 10A
1.5
1.0
25
©2012 Fairchild Semiconductor Corporation
o
TC = 25 C
15
10
3
IC = 10A
5
0
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
Common Emitter
4
20A
40A
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGA20S140P Rev. C3
FGA20S140P 1400 V, 20 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge
Figure 8. Capacitance Characteristics
10000
20
Common Emitter
Cies
1000
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
TC = 175 C
16
12
8
20A
IC = 10A
4
100
Coes
Cres
10
40A
Common Emitter
VGE = 0V, f = 1MHz
o
TC = 25 C
1
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
5
10
15
20
25
Collector-Emitter Voltage, VCE [V]
20
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
100
15
Common Emitter
10µs
400V
o
TC = 25 C
600V
12
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
30
VCC = 200V
9
6
3
10
100µs
1ms
1
10ms
DC
*Notes:
0.1
o
1. TC = 25 C
o
0.01
1
0
0
30
60
90
120 150
Gate Charge, Qg [nC]
180
210
Figure 11. Turn-On Characteristics vs
Gate Resistance
2. TJ = 175 C
3. Single Pulse
10
100
1000 2000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
10000
200
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
tr
Switching Time [ns]
Switching Time [ns]
o
100
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25 C
o
TC = 175 C
td(off)
1000
tf
o
10
TC = 25 C
o
TC = 175 C
5
10
20
30
40
50
60
Gate Resistance, RG [Ω]
©2012 Fairchild Semiconductor Corporation
100
70
4
0
10
20
30
40
50
Gate Resistance, RG [Ω]
60
70
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FGA20S140P Rev. C3
FGA20S140P 1400 V, 20 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics VS.
Collector Current
Figure 14.Turn-off Characteristics VS.
Collector Current
Common Emitter
VGE = 15V, RG = 10Ω
o
o
TC = 25 C
TC = 25 C
o
o
tr
TC = 175 C
TC = 175 C
Switching Time [ns]
1000
Switching Time [ns]
Common Emitter
VGE = 15V, RG = 10Ω
1000
100
td(on)
td(off)
tf
10
100
10
20
30
40
10
20
30
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss VS. Gate Resistance
Figure 16. Switching Loss VS. Gate Resistance
10
30
Common Emitter
VCC = 600V, VGE = 15V
o
Switching Loss [mJ]
Switching Loss [mJ]
TC = 25 C
Eon
TC = 175 C
1
Eoff
0.1
0.1
10
20
Common Emitter
VGE = 15V, RG = 10Ω
10k
IC = 20A
o
30
40
50
Gate Resistance, RG [Ω]
60
40
o
TC = 25 C
o
TC = 175 C
Eoff
1k
Eon
100
10
70
20
30
Collector Current, IC [A]
40
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
80
Forward Current, IF [A]
Collector Current, IC [A]
100
10
Safe Operating Area
VGE = 15V, TC = 175 C
o
TJ = 175 C
o
TC = 25 C
o
TC = 175 C
1
0.5
10
100
1000 2000
Collector-Emitter Voltage, VCE [V]
©2012 Fairchild Semiconductor Corporation
10
1
o
1
o
TJ = 25 C
0
5
1
Forward Voltage, VF [V]
2
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FGA20S140P Rev. C3
FGA20S140P 1400 V, 20 A Shorted-anode IGBT
Typical Performance Characteristics
FGA20S140P 1400 V, 20 A Shorted-anode IGBT
Figure 19.. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01 single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
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FGA20S140P Rev. C3
FGA20S140P 1400 V, 20 A Shorted-anode IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
7
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FGA20S140P Rev. C3
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2012 Fairchild Semiconductor Corporation
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FGA20S140P Rev. C3
FGA20S140P 1400 V, 20 A Shorted-anode IGBT
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